Junghwan Kim
Tokyo Institute of Technology
H-index: 20
Asia-Japan
Top articles of Junghwan Kim
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
Approach to Low Contact Resistance Formation on Buried Interface in Oxide Thin-Film Transistors: Utilization of Palladium-Mediated Hydrogen Pathway | ACS nano | Yuhao Shi Masatake Tsuji Hanjun Cho Shigenori Ueda Junghwan Kim | 2024/3/22 |
Approaches for 3D Integration Using Plasma-Enhanced Atomic-Layer-Deposited Atomically-Ordered InGaZnO Transistors with Ultra-High Mobility | Small methods | Yoon-Seo Kim Hye-Jin Oh Junghwan Kim Jun Hyung Lim Jin-Seong Park | 2023/7 |
Selectively Nitrogen doped ALD-IGZO TFTs with extremely high mobility and reliability | ACS Applied Materials & Interfaces | Dong-Gyu Kim Hyuk Choi Yoon-Seo Kim Dong-Hyeon Lee Hye-Jin Oh | 2023/6/23 |
P‐8: Synthesis of Superior‐Performance InGaZnO Based on Ideal Reaction of Plasma Enhanced Atomic Layer Deposition† | SID Symposium Digest of Technical Papers | Yoon-Seo Kim Hye-Jin Oh Junghwan Kim Jun Hyung Lim Jin-Seong Park | 2023/6 |
Role of hydrogen-doping for compensating oxygen-defect in non-stoichiometric amorphous In2O3− x: Modeling with a machine-learning potential | Journal of Applied Physics | Shingo Urata Nobuhiro Nakamura Junghwan Kim Hideo Hosono | 2023/9/21 |
Room-Temperature Solid-State Synthesis of Cs3Cu2I5 Thin Films and Formation Mechanism for Its Unique Local Structure | Journal of the American Chemical Society | Masatake Tsuji Masato Sasase Soshi Iimura Junghwan Kim Hideo Hosono | 2023/5/16 |
Novel Self-aligned Passivation Process for Oxide TFTs utilizing Amorphous Gallium Oxide | Yuhao Shi Junghwan Kim Hideo Hosono | 2023/7/4 | |
Electronic promotion of methanol synthesis over Cu-loaded ZnO-based catalysts | The Journal of Physical Chemistry Letters | Hironobu Sugiyama Nobuhiro Nakamura Satoru Watanabe Junghwan Kim Masaaki Kitano | 2023/1/31 |
A Strategy for High-Mobility and Highly-Stable Oxide TFTs | Junghwan Kim Yu-Shien Shiah Kihyung Sim Hideo Hosono | 2023/7/4 | |
Hole Concentration Reduction in CuI by Zn Substitution and its Mechanism: Toward Device Applications | ACS Applied Materials & Interfaces | Masatake Tsuji Soshi Iimura Junghwan Kim Hideo Hosono | 2022/7/13 |
Extremely Shallow Valence Band in Lanthanum Trihydride | Journal of the American Chemical Society | Tomoyuki Yamasaki Soshi Iimura Junghwan Kim Hideo Hosono | 2022/12/21 |
18‐Crown‐6 Additive to Enhance Performance and Durability in Solution‐Processed Halide Perovskite Electronics | Small | Kihyung Sim Takuya Nakao Masato Sasase Soshi Iimura Junghwan Kim | 2022/8 |
Breaking the Mobility-Stability Trade-Off in Oxide TFTs | Proceedings of the International Display Workshops | Kim Junghwan Shiah Yu-Shien Abe Katsumi Hosono Hideo | 2022/12/14 |
Carbon‐Related Impurities and NBS Instability in AOS‐TFTs | Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory | Junghwan Kim Hideo Hosono | 2022/8/1 |
Experimental demonstration of high-order in-memory computing based on IGZO charge trapping RAM array for polynomial regression acceleration | Lin Bao Zongwei Wang Yuhao Shi Yaotian Ling Yunfan Yang | 2022/12/3 | |
Rare Earth–and Transition Metal–Doped Amorphous Oxide Semiconductor Phosphors for Novel Light‐Emitting Diode Displays | Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory | Keisuke Ide Junghwan Kim Hideo Hosono Toshio Kamiya | 2022/8/1 |
High-performance a-ITZO TFTs with high bias stability enabled by self-aligned passivation using a-GaOx | Applied Physics Letters | Yuhao Shi Yu-Shien Shiah Kihyung Sim Masato Sasase Junghwan Kim | 2022/11/21 |
Application of AOSs to Charge Transport Layers in Electroluminescent Devices | Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory | Junghwan Kim Hideo Hosono | 2022/8/1 |
Low-temperature-processable amorphous-oxide-semiconductor-based phosphors for durable light-emitting diodes | Applied Physics Letters | Keisuke Ide Naoto Watanabe Takayoshi Katase Masato Sasase Junghwan Kim | 2022/11/7 |
Characteristic resistive switching of rare-earth oxyhydrides by hydride ion insertion and extraction | ACS applied materials & interfaces | Tomoyuki Yamasaki Ryosei Takaoka Soshi Iimura Junghwan Kim Hidenori Hiramatsu | 2022/4/19 |
Co-Authors
