Jun Tatebayashi

Jun Tatebayashi

Osaka University

H-index: 31

Asia-Japan

About Jun Tatebayashi

Jun Tatebayashi, With an exceptional h-index of 31 and a recent h-index of 14 (since 2020), a distinguished researcher at Osaka University,

His recent articles reflect a diverse array of research interests and contributions to the field:

An efficiently excited Eu3+ luminescent site formed in Eu, O-codoped GaN

Formation of nanowires based on rare-earth-doped semiconductors for device applications

Electrically driven europium-doped GaN microdisk

Towards ultrahigh-resolution micro-LED displays using a monolithic vertically stacked full-color LED

Red Electroluminescence from Light Emitting Diodes Based on Eu-Doped ZnO Embedded in p-GaN/Al2O3/n-ZnO Heterostructures

Demonstration of GaN: Eu/GaN nanowire light emitting diodes grown by selective-area organometallic vapor phase epitaxy

Enhanced light output of Eu, O-codoped GaN caused by reconfiguration of luminescent sites during post-growth thermal annealing

229 nm far-ultraviolet second harmonic generation in a vertical polarity inverted AlN bilayer channel waveguide

Jun Tatebayashi Information

University

Position

___

Citations(all)

3315

Citations(since 2020)

857

Cited By

2785

hIndex(all)

31

hIndex(since 2020)

14

i10Index(all)

71

i10Index(since 2020)

28

Email

University Profile Page

Osaka University

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Top articles of Jun Tatebayashi

Title

Journal

Author(s)

Publication Date

An efficiently excited Eu3+ luminescent site formed in Eu, O-codoped GaN

AIP Advances

Takenori Iwaya

Shuhei Ichikawa

Volkmar Dierolf

Brandon Mitchell

Hayley Austin

...

2024/2/1

Formation of nanowires based on rare-earth-doped semiconductors for device applications

Jun Tatebayashi

Yasufumi Fujiwara

2024

Electrically driven europium-doped GaN microdisk

Optics Letters

T Taniguchi

D Timmerman

S Ichikawa

J Tatebayashi

Y Fujiwara

2023/9/1

Towards ultrahigh-resolution micro-LED displays using a monolithic vertically stacked full-color LED

Yasufumi Fujiwara

Shuhei Ichikawa

Dolf Timmerman

Jun Tatebayashi

2023/3/17

Red Electroluminescence from Light Emitting Diodes Based on Eu-Doped ZnO Embedded in p-GaN/Al2O3/n-ZnO Heterostructures

ECS Journal of Solid State Science and Technology

Jun Tatebayashi

Kazuto Nishimura

Shuhei Ichikawa

Shinya Yamada

Yoshikata Nakajima

...

2023/7/28

Demonstration of GaN: Eu/GaN nanowire light emitting diodes grown by selective-area organometallic vapor phase epitaxy

Japanese Journal of Applied Physics

T Otabara

J Tatebayashi

Takuma Yoshimura

D Timmerman

S Ichikawa

...

2023/3/3

Enhanced light output of Eu, O-codoped GaN caused by reconfiguration of luminescent sites during post-growth thermal annealing

Applied Physics Letters

T Iwaya

S Ichikawa

D Timmerman

J Tatebayashi

Y Fujiwara

2023/1/16

229 nm far-ultraviolet second harmonic generation in a vertical polarity inverted AlN bilayer channel waveguide

Applied Physics Express

Hiroto Honda

Soshi Umeda

Kanako Shojiki

Hideto Miyake

Shuhei Ichikawa

...

2023/6/19

Towards tunable single-pixel LEDs with Eu-doped GaN active layers

APS March Meeting Abstracts

Hayley Austin

Brandon Mitchell

Jun Tatebayashi

Yasufumi Fujiwara

Volkmar Dierolf

2023

37‐4: Invited Paper: Towards Small, Ultrahigh‐Definition Micro‐LED Displays Using Monolithic Vertically Stacked RGB LEDs

SID Symposium Digest of Technical Papers

Yasufumi Fujiwara

Shuhei Ichikawa

Dolf Timmerman

Jun Tatebayashi

2023/6

Enhancement of Er luminescence from bridge-type photonic crystal nanocavities with Er, O-co-doped GaAs

Optics Continuum

Zhidong Fang

Jun Tatebayashi

Ryohei Homi

Masayuki Ogawa

Hirotake Kajii

...

2023/10/15

Monolithic Vertically Stacked RGB LEDs for Small Micro-LED Displays with Ultrahigh Definition

Yasufumi Fujiwara

Shuhei Ichikawa

Dolf Timmerman

Jun Tatebayashi

2023/4/19

Formation and Optical Characteristics of GaN: Eu/GaN Nanowires for Applications in Light-Emitting Diodes

Jun Tatebayashi

Takaya Otabara

Takuma Yoshimura

Raiki Hada

Ryo Yoshida

...

2023/9/20

Modeling defect mediated color-tunability in LEDs with Eu-doped GaN-based active layers

Journal of Applied Physics

Hayley J Austin

Brandon Mitchell

Dolf Timmerman

Jun Tatebayashi

Shuhei Ichikawa

...

2022/1/31

Improved Q-factors of III-nitride-based photonic crystal nanocavities by optical loss engineering

Optics Express

Takenori Iwaya

Shuhei Ichikawa

Dolf Timmerman

Jun Tatebayashi

Yasufumi Fujiwara

2022/8/1

Modeling of color tunable light-emitting diodes with Eu-doped GaN active layers

APS March Meeting Abstracts

Hayley Austin

Brandon Mitchell

Jun Tatebayashi

Yasufumi Fujiwara

Volkmar Dierolf

2022

Eu-doped GaN red LEDs for micro-LED displays with extremely high resolution

Yasufumi Fujiwara

Shuhei Ichikawa

Dolf Timmerman

Jun Tatebayashi

2022/7/5

Eu-doped GaN-Based Red LED for Next-Generation Micro-LED Displays

Yasufumi Fujiwara

Shuhei Ichikawa

Dolf Timmerman

Jun Tatebayashi

2022/5/11

Eu-doped GaN-based red LEDs as a key technology for micro-LED displays with ultrahigh resolution

ITE Technical Report; ITE Tech. Rep.

Yasufumi Fujiwara

Shuhei Ichikawa

Dolf Timmerman

Jun Tatebayashi

2022/2/25

Elucidation of the excitation mechanism of Tb ions doped in AlxGa1− xN grown by OMVPE toward a wavelength-stable green emitter

Journal of Applied Physics

R Komai

S Ichikawa

H Hanzawa

J Tatebayashi

Y Fujiwara

2022/2/21

See List of Professors in Jun Tatebayashi University(Osaka University)

Co-Authors

H-index: 66
Toshihiko Baba

Toshihiko Baba

Yokohama National University

H-index: 49
L. Ralph Dawson

L. Ralph Dawson

University of New Mexico

H-index: 35
Ganesh Balakrishnan

Ganesh Balakrishnan

University of New Mexico

H-index: 34
BAOLAI LIANG

BAOLAI LIANG

University of California, Los Angeles

academic-engine