Joung Real Ahn

Sungkyunkwan University

H-index: 25

Asia-South Korea

Joung Real Ahn, With an exceptional h-index of 25 and a recent h-index of 12 (since 2020), a distinguished researcher at Sungkyunkwan University,

His recent articles reflect a diverse array of research interests and contributions to the field:

Wafer-Scale Epitaxial Growth of an Atomically Thin Single-Crystal Insulator as a Substrate of Two-Dimensional Material Field-Effect Transistors

Environmental effects on layer-dependent dynamics of Dirac fermions in quasicrystalline bilayer graphene

Atomic arrangements of quasicrystal bilayer graphene: Interlayer distance expansion

Large-scale Growth of Quasifreestanding Graphene by using a Single-step Process

Regulation of asymmetric interlayer distributions of carriers in Twisted Bilayer Graphene and dynamics

Freestanding graphene writing on a silicon carbide wafer

Title	Journal	Author(s)	Publication Date
Wafer-Scale Epitaxial Growth of an Atomically Thin Single-Crystal Insulator as a Substrate of Two-Dimensional Material Field-Effect Transistors	Nano Letters	Eun Hye Kim Do Hee Lee Tae Jun Gu Hyobin Yoo Yamujin Jang ...	2023/3/17
Environmental effects on layer-dependent dynamics of Dirac fermions in quasicrystalline bilayer graphene	Physical Review B	Y Zhao T Suzuki T Iimori H-W Kim JR Ahn ...	2022/3/16
Atomic arrangements of quasicrystal bilayer graphene: Interlayer distance expansion	Physical Review B	Yuki Fukaya Yuhao Zhao Hyun-Woo Kim Joung Real Ahn Hirokazu Fukidome ...	2021/11/23
Large-scale Growth of Quasifreestanding Graphene by using a Single-step Process	Journal of the Korean Physical Society	Ishwor Bahadur Khadka Ji-Hoon Park Eun Hye Kim Hyun-Woo Kim Do Hee Lee ...	2020/11
Regulation of asymmetric interlayer distributions of carriers in Twisted Bilayer Graphene and dynamics		Yuhao Zhao Takeshi Suzuki Takushi Iimori Sung Joon Ahn Joung Real Ahn ...	2020
Freestanding graphene writing on a silicon carbide wafer	Current Applied Physics	EH Kim JH Park IB Khadk J Son HW Kim ...	2020/12/1