John Kouvetakis
Arizona State University
H-index: 59
North America-United States
Top articles of John Kouvetakis
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
A practical theoretical model for Ge-like epitaxial diodes: I. The I–V characteristics | Journal of Applied Physics | Matthew A Mircovich John Kouvetakis José Menéndez | 2024/3/28 |
A model for the IV characteristics of Ge and GeSn epitaxial pin diodes | APS March Meeting Abstracts | Jose Menendez Matthew Mircovich John Kouvetakis | 2023 |
Spectral Optical Responsivity of GeSn PIN Diodes: Experiment and Theory | Bulletin of the American Physical Society | Matthew Mircovich Jose Menendez John Kouvetakis Dhruve Ringwala Aixin Zhang | 2023/3/8 |
Synthesis of High Sn Content Ge1–x–ySixSny (0.1 < y < 0.22) Semiconductors on Si for MWIR Direct Band Gap Applications | ACS Applied Materials & Interfaces | John Kouvetakis Patrick M Wallace Chi Xu Dhruve A Ringwala Matthew Mircovich | 2023/10/6 |
Consistent optical and electrical determination of carrier concentrations for the accurate modeling of the transport properties of n-type Ge | Materials Science in Semiconductor Processing | José Menéndez Chi Xu John Kouvetakis | 2023/9/1 |
Synthesis of short-wave infrared Ge1− ySny semiconductors directly on Si (100) via ultralow temperature molecular routes for monolithic integration applications | Journal of Vacuum Science & Technology A | Chi Xu Ting Hu Aixin Zhang Dhruve A Ringwala José Menéndez | 2022/12/1 |
Room temperature emission spectroscopy of GeSn waveguides under optical pumping | AIP Advances | Z Li Y Zhao JD Gallagher D Lombardo A Sarangan | 2022/7/1 |
Ultra-low temperature synthesis of Ge-based optical materials and devices on Si using GeH 3 Cl | Journal of Materials Chemistry C | Aixin Zhang Matthew A Mircovich Dhruve A Ringwala Christian D Poweleit Manuel A Roldan | 2022 |
Gas source molecular epitaxy of Ge1− ySny materials and devices using high order Ge4H10 and Ge5H12 hydrides | Journal of Vacuum Science & Technology A | Chi Xu Ting Hu Dhruve A Ringwala José Menéndez John Kouvetakis | 2021/12/1 |
Extended Compositional Range for the Synthesis of SWIR and LWIR Ge1–ySny Alloys and Device Structures via CVD of SnH4 and Ge3H8 | ACS Applied Electronic Materials | Matthew A Mircovich Chi Xu Dhruve A Ringwala Christian D Poweleit José Menéndez | 2021/8/10 |
GeSn alloys with mid-IR direct band gaps | APS March Meeting Abstracts | Jose Menendez Chi Xu John Kouvetakis Nuwanjula Samarasingha Arachchige Carola Emminger | 2021 |
Mid-IR GeSn alloys with narrow band gaps beyond 8 μm | Bulletin of the American Physical Society | Jose Menendez Chi Xu John Kouvetakis | 2020/3/3 |
Displacement Damage Effects in Germanium Tin LEDs | vol | K Choe MR Hogsed N Miguel JW McClory J Kouvetakis | 2020/3/1 |
Radiation-induced electron and hole traps in Ge1− xSnx (x= 0–0.094) | Journal of Applied Physics | Michael Hogsed Kevin Choe Norman Miguel Buguo Wang John Kouvetakis | 2020/2/14 |
Evolution of optical phonons in epitaxial Ge1−ySny structures | Journal of Raman Spectroscopy | Young Chan Kim Taegeon Lee Mee‐Yi Ryu John Kouvetakis Heesuk Rho | 2020/11 |
Synthesis of heteroepitaxial BP and related Al-B-Sb-As-P films via CVD of Al (BH4) 3 and MH3 (M= P, As, Sb) at temperatures below 600° C | Semiconductor Science and Technology | Patrick Sims Patrick Wallace Lei Liu Houlong Zhuang J Kouvetakis | 2020/7/17 |
