Jin Wei
Peking University
H-index: 32
Asia-China
Top articles of Jin Wei
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
Development of Enhancement-Mode GaN p-FET With Post-Etch Wet Treatment on p-GaN Gate HEMT Epi-Wafer | IEEE Transactions on Electron Devices | Teng Li Meng Zhang Jingjing Yu Jiawei Cui Junjie Yang | 2024/2/20 |
High-Voltage E-Mode p-GaN Gate HEMT on Sapphire With Gate Termination Extension | IEEE Transactions on Electron Devices | Jiawei Cui Yanlin Wu Junjie Yang Jingjing Yu Teng Li | 2024/2/7 |
SiC Fin-Channel MOSFET for Enhanced Gate Shielding Effect | Electronics | Ling Sang Rui Jin Jiawei Cui Xiping Niu Zheyang Li | 2024/4/28 |
Insulated p-GaN Gate Active-Passivation HEMT Maintaining Effective Hole Injection for Low Dynamic ON-Resistance | IEEE Electron Device Letters | Junjie Yang Jin Wei Maojun Wang Jingjing Yu Yanlin Wu | 2024/4/18 |
Virtual-Body p-GaN Gate HEMT with Enhanced Ruggedness Against Hot-Electron-Induced Degradation | IEEE Electron Device Letters | Junjie Yang Maojun Wang Jingjing Yu Yanlin Wu Jiawei Cui | 2024/3/14 |
Cell Design Consideration in SiC Planar IGBT and Proposal of New SiC IGBT With Improved Performance Trade-Off | IEEE Journal of the Electron Devices Society | Meng Zhang Yamin Zhang Baikui Li Shiwei Feng Mengyuan Hua | 2023/3/21 |
650-V GaN-on-Si Power Integration Platform Using Virtual-Body p-GaN Gate HEMT to Screen Substrate-Induced Crosstalk | Junjie Yang Jin Wei Maojun Wang Muqin Nuo Han Yang | 2023/12/9 | |
Time-Resolved Extraction of Negatively Shifted Threshold Voltage in Schottky-Type p-GaN Gate HEMT Biased at High | IEEE Transactions on Electron Devices | Muqin Nuo Yanlin Wu Junjie Yang Yilong Hao Maojun Wang | 2023/5/29 |
650-V E-Mode p-GaN gate HEMT with Schottky source extension towards enhanced short-circuit reliability | IEEE Electron Device Letters | Jingjing Yu Jin Wei Maojun Wang Junjie Yang Yanlin Wu | 2023/8/31 |
Switching Performance of GaN -FET-bridge (PFB-) HEMTs Studied with Mixed-mode TCAD Simulation | Junting Chen Tao Chen Zuoheng Jiang Chengcai Wang Zheyang Zheng | 2023/5/28 | |
GaN-on-Si quasi-vertical pn diode with junction termination extension based on hydrogen plasma treatment and diffusion | IEEE Transactions on Electron Devices | Xuan Liu Maojun Wang Jin Wei Cheng P Wen Bing Xie | 2023/3/6 |
6500-V E-mode Active-Passivation p-GaN Gate HEMT with Ultralow Dynamic RON | Jiawei Cui Jin Wei Maojun Wang Yanlin Wu Junjie Yang | 2023/12/9 | |
Quasi-vertical GaN-on-silicon Schottky barrier diode terminated with hydrogen modulated in-situ pn junction | IEEE Journal of the Electron Devices Society | Xuan Liu Maojun Wang Jin Wei Yilong Hao Xingyu Fu | 2023/8/30 |
Exploitation of Hole Injection and Spreading for Dynamic Enhancement in p-GaN Gate HEMT under Room/High Temperatures | Junjie Yang Yanlin Wu Muqin Nuo Zhenghao Chen Xuelin Yang | 2023/5/28 | |
Correlation between reverse leakage current and electric field spreading in GaN vertical SBD with high-energy ion implanted guard rings | IEEE Transactions on Electron Devices | Jiayue Xu Xuan Liu Bing Xie Yilong Hao Cheng P Wen | 2023/2/8 |
HyFET—A GaN/SiC Hybrid Field-Effect Transistor | Sirui Feng Zheyang Zheng Yuru Wang Gang Lyu Kai Liu | 2023/12/9 | |
GaN power integration technology and its future prospects | Jin Wei Zheyang Zheng Gaofei Tang Han Xu Gang Lyu | 2023/12/27 | |
Unipolar-Turn-Off Lateral Insulated-Gate Bipolar Transistor With On-Chip Biasing Circuit for Injection Control | IEEE Transactions on Electron Devices | Youyi Yin Junjie Yang Meng Zhang Tian Gao Maojun Wang | 2023/7/24 |
High Dynamic Stability in Enhancement-Mode Active-Passivation p-GaN Gate HEMT | Yanlin Wu Muqin Nuo Junjie Yang Zheyang Zheng Li Zhang | 2023/5/28 | |
Demonstration of 1200-V E-mode GaN-on-Sapphire Power Transistor with Low Dynamic ON-Resistance Based on Active Passivation Technique | IEEE Electron Device Letters | Jiawei Cui Maojun Wang Yanlin Wu Junjie Yang Han Yang | 2023/12/8 |
