Jihyun Kim

Jihyun Kim

Korea University

H-index: 57

Asia-South Korea

About Jihyun Kim

Jihyun Kim, With an exceptional h-index of 57 and a recent h-index of 37 (since 2020), a distinguished researcher at Korea University,

His recent articles reflect a diverse array of research interests and contributions to the field:

H trapping at the metastable cation vacancy in α-Ga2O3 and α-Al2O3

Capacitance–voltage characteristics of Pt/hBN/WSe2 metal–insulator–semiconductor capacitor doped by charge-transfer process

Type II band alignment of NiO/α-Ga2O3 for annealing temperatures up to 600° C

β-Ga 2 O 3 heterojunction field-effect transistors prepared via UV laser-assisted p-doping of two-dimensional WSe 2

Normally Off WSe2 Nanosheet-Based Field-Effect Transistors with Self-Aligned Contact Doping

Two-dimensional material templates for van der Waals epitaxy, remote epitaxy, and intercalation growth

Recessed-Channel WSe2 Field-Effect Transistor via Self-Terminated Doping and Layer-by-Layer Etching

Radiation damage in wide and ultra-wide bandgap semiconductors

Jihyun Kim Information

University

Position

___

Citations(all)

15358

Citations(since 2020)

7858

Cited By

10455

hIndex(all)

57

hIndex(since 2020)

37

i10Index(all)

211

i10Index(since 2020)

113

Email

University Profile Page

Korea University

Google Scholar

View Google Scholar Profile

Top articles of Jihyun Kim

Title

Journal

Author(s)

Publication Date

H trapping at the metastable cation vacancy in α-Ga2O3 and α-Al2O3

Applied Physics Letters

Andrew Venzie

Amanda Portoff

Michael Stavola

W Beall Fowler

Jihyun Kim

...

2022/5/9

Capacitance–voltage characteristics of Pt/hBN/WSe2 metal–insulator–semiconductor capacitor doped by charge-transfer process

Applied Physics Letters

HoHyun Im

Geonyeop Lee

Hyunik Park

Dongryul Lee

Jihyun Kim

2022/1/10

Type II band alignment of NiO/α-Ga2O3 for annealing temperatures up to 600° C

Journal of Vacuum Science and Technology A

Xinyi Xia

Jian-Sian Li

Chao-Ching Chiang

Timothy Jinsoo Yoo

Eitan Hershkovitz

...

2022/11/15

β-Ga 2 O 3 heterojunction field-effect transistors prepared via UV laser-assisted p-doping of two-dimensional WSe 2

Journal of Materials Chemistry C

Sanghyun Moon

Jinho Bae

Jihyun Kim

2022

Normally Off WSe2 Nanosheet-Based Field-Effect Transistors with Self-Aligned Contact Doping

ACS Applied Nano Materials

Dongryul Lee

Jin Yong An

Chul-Ho Lee

Ki Wan Bong

Jihyun Kim

2022/11/17

Two-dimensional material templates for van der Waals epitaxy, remote epitaxy, and intercalation growth

Applied Physics Reviews

Huije Ryu

Hyunik Park

Joung-Hun Kim

Fan Ren

Jihyun Kim

...

2022/9/7

Recessed-Channel WSe2 Field-Effect Transistor via Self-Terminated Doping and Layer-by-Layer Etching

ACS nano

Dongryul Lee

Yongha Choi

Junghun Kim

Jihyun Kim

2022/5/16

Radiation damage in wide and ultra-wide bandgap semiconductors

ECS Journal of Solid State Science and Technology

SJ Pearton

Assel Aitkaliyeva

Minghan Xian

Fan Ren

Ani Khachatrian

...

2021/5/17

Self-powered solar-blind α-Ga2O3 thin-film UV-C photodiode grown by halide vapor-phase epitaxy

APL Materials

Jinho Bae

Ji-Hyeon Park

Dae-Woo Jeon

Jihyun Kim

2021/10/1

Design of Ga2O3 modulation doped field effect transistors

Journal of Vacuum Science & Technology A

Michael A Mastro

Marko J Tadjer

Jihyun Kim

Fan Ren

Stephen J Pearton

2021/3/1

Electrical properties and deep trap spectra in Ga2O3 films grown by halide vapor phase epitaxy on p-type diamond substrates

Journal of Applied Physics

Alexander Y Polyakov

Vladimir I Nikolaev

Sergey A Tarelkin

Alexei I Pechnikov

Sergey I Stepanov

...

2021/5/14

Capacitive β-Ga2O3 solar-blind photodetector with graphene electrode

Journal of Vacuum Science & Technology A

Ayeong Kim

Geonyeop Lee

Jihyun Kim

2021/9/1

Photoelectrochemical etching of ultra-wide bandgap β-Ga2O3 semiconductor in phosphoric acid and its optoelectronic device application

Applied Surface Science

Yong Ha Choi

Kwang Hyeon Baik

Suhyun Kim

Jihyun Kim

2021/2/15

High responsivity solar-blind metal-semiconductor-metal photodetector based on α-Ga2O3

Journal of Vacuum Science & Technology A

Jinho Bae

Dae-Woo Jeon

Ji-Hyeon Park

Jihyun Kim

2021/5/1

Magneto-optical properties of Cr3+ in β-Ga2O3

Applied Physics Letters

Jan E Stehr

Mattias Jansson

Detlev M Hofmann

Jihyun Kim

Stephen J Pearton

...

2021/8/2

Assessment of the (010) β-Ga2O3 surface and substrate specification

Journal of Vacuum Science & Technology A

Michael A Mastro

Charles R Eddy

Marko J Tadjer

Jennifer K Hite

Jihyun Kim

...

2021/1/1

Large-scale synthesis of atomically thin ultrawide bandgap β-Ga2O3 using a liquid gallium squeezing technique

Journal of Vacuum Science & Technology A

Hyunik Park

Yongha Choi

Sujung Yang

Jinho Bae

Jihyun Kim

2021/5/1

Defect‐Engineered n‐Doping of WSe2 via Argon Plasma Treatment and Its Application in Field‐Effect Transistors

Advanced Materials Interfaces

Junghun Kim

Hyunik Park

SangHyuk Yoo

Yeon‐Ho Im

Keonwook Kang

...

2021/7

(100) Plane β-Ga2O3 Flake Based Field Effect Transistor and Its Hydrogen Response

ECS Journal of Solid State Science and Technology

Man-Kyung Kim

Yukyung Kim

Jinho Bae

Jihyun Kim

Kwang Hyeon Baik

...

2021/12/30

Artificial neuron and synapse devices based on 2D materials

Geonyeop Lee

Ji‐Hwan Baek

Fan Ren

Stephen J Pearton

Gwan‐Hyoung Lee

...

2021/5

See List of Professors in Jihyun Kim University(Korea University)

Co-Authors

H-index: 140
Stephen Pearton

Stephen Pearton

University of Florida

H-index: 106
Fan Ren

Fan Ren

University of Florida

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