CUFinder

Ji-Woon Yang

Ji-Woon Yang

Korea University

H-index: 22

Asia-South Korea

Contact Ji-Woon Yang

About Ji-Woon Yang

Ji-Woon Yang, With an exceptional h-index of 22 and a recent h-index of 12 (since 2020), a distinguished researcher at Korea University, specializes in the field of Semiconductor devices modeling.

His recent articles reflect a diverse array of research interests and contributions to the field:

Surface-potential-based analytical model of low-frequency noise for planar-type tunnel field-effect transistors

Physics-based compact model of transient leakage current caused by parasitic bipolar junction transistor in gate-all-around MOSFETs

Ji-Woon Yang Information

University

Position

Professor of Electronics and Information Engineering

Citations(all)

2041

Citations(since 2020)

514

Cited By

2362

hIndex(all)

22

hIndex(since 2020)

12

i10Index(all)

34

i10Index(since 2020)

14

Email

University Profile Page

Google Scholar

Ji-Woon Yang Skills & Research Interests

Semiconductor devices modeling

Top articles of Ji-Woon Yang

Title

Journal

Author(s)

Publication Date

Surface-potential-based analytical model of low-frequency noise for planar-type tunnel field-effect transistors

IEEE Transactions on Electron Devices

Yeong-Hun Park

Boram Yi

Seung-Hwan Kim

Ju-Hyun Shim

Hyeong-Sub Song

...

2021/6/17

Physics-based compact model of transient leakage current caused by parasitic bipolar junction transistor in gate-all-around MOSFETs

Solid-State Electronics

Boram Yi

Yeong-Hun Park

Ji-Woon Yang

2020/2/1

See List of Professors in Ji-Woon Yang University(Korea University)