Jean-Pierre Raskin
Université Catholique de Louvain
H-index: 67
Europe-Belgium
Top articles of Jean-Pierre Raskin
Analysis of anomalous CV behavior for extracting the traps density in the undoped polysilicon with a double-BOX structure
Solid-State Electronics
2024/4/26
Effect of Buffer Charge Redistribution on RF Losses and Harmonic Distortion in GaN-on-Si Substrates
IEEE Journal of the Electron Devices Society
2024/4/8
Sachin Yadav
H-Index: 4
Jean-Pierre Raskin
H-Index: 38
AlN/Si interface engineering to mitigate RF losses in MOCVD grown GaN-on-Si substrates
arXiv preprint arXiv:2404.02707
2024/4/3
Sachin Yadav
H-Index: 4
Ming Zhao
H-Index: 6
Sourish Banerjee
H-Index: 6
Robert Langer
H-Index: 162
Jean-Pierre Raskin
H-Index: 38
Structures for radiofrequency applications and related methods
2024/3/5
On-chip very low strain rate rheology of amorphous olivine films
Acta Materialia
2024/3/1
Contribution of Substrate Harmonic Distortion to GaN-on-Si RF Switches Linearity
IEEE Microwave and Wireless Technology Letters
2024/1/31
Sachin Yadav
H-Index: 4
Jean-Pierre Raskin
H-Index: 38
Impact of a High-resistivity
Technologies Enabling Future Mobile Connectivity & Sensing
2024/1/9
Jean-Pierre Raskin
H-Index: 38
Circuits for 5G applications implemented in FD-SOI and RF/PD-SOI technologies
2024/1/1
Jean-Pierre Raskin
H-Index: 38
FD-SOI and RF-SOI technologies for 5G
2024/1/1
Jean-Pierre Raskin
H-Index: 38
CV measurement and modeling of double-BOX Trap-Rich SOI substrate
Solid-State Electronics
2023/11/1
Impact of thermal coupling effects on the digital and analog figures of merit of UTBB SOI MOSFET pairs
Solid-State Electronics
2023/4/1
The paradox of industrial involvement in engineering higher education
2023/10/18
Jean-Pierre Raskin
H-Index: 38
Band gap reduction in highly-strained silicon beams predicted by first-principles theory and validated using photoluminescence spectroscopy
Optical Materials
2023/10/1
Romain Scaffidi
H-Index: 0
Thomas Pardoen
H-Index: 42
Denis Flandre
H-Index: 29
Jean-Pierre Raskin
H-Index: 38
Improving the determination of strain in the deformed Silicon measured by Raman spectroscopy
2023/3/28
Denis Flandre
H-Index: 29
Jean-Pierre Raskin
H-Index: 38
GaN-on-Porous Silicon for RF Applications
2023/9/19
Oxygen activated CVD growth of large-area multilayer h-BN on polycrystalline copper foils
Journal of Crystal Growth
2023/3/15
Sub-mmWave Transmission Lines on Silicon-Based Technologies
2023/9/19
Shiqi Ma
H-Index: 2
Jean-Pierre Raskin
H-Index: 38
Double buried oxide trap-rich substrates for high frequency applications
IEEE Electron Device Letters
2023/2/9
Jean-Pierre Raskin
H-Index: 38
SPST and SPDT 60 GHz Travelling-Wave Switches in 22 nm FD-SOI
2023/9/18
Jean-Pierre Raskin
H-Index: 38
Raman strain–shift measurements and prediction from first-principles in highly strained silicon
Journal of Materials Science: Materials in Electronics
2023/2
Jean-Pierre Raskin
H-Index: 38
Denis Flandre
H-Index: 29
Co-Authors
