Jean-Michel Sallese
École Polytechnique Fédérale de Lausanne
H-index: 36
Europe-Switzerland
Top articles of Jean-Michel Sallese
TOPICAL WORKSHOP ON ELECTRONICS FOR PARTICLE PHYSICS GEREMEAS, SARDINIA, ITALY 1-6 OCTOBER 2023
JOURNAL OF INSTRUMENTATION
2024/3/1
Jean-Michel Sallese
H-Index: 19
High-rate, high-resolution single photon X-ray imaging: Medipix4, a large 4-side buttable pixel readout chip with high granularity and spectroscopic capabilities
Journal of Instrumentation
2024/2/16
Characteristics and ultra-high total ionizing dose response of 22 nm fully depleted silicon-on-insulator
Journal of Instrumentation
2024/3/19
Jean-Michel Sallese
H-Index: 19
Low-Cost Portable Medical Device for the Detection and Quantification of Exosomes
2023/10/29
Jean-Michel Sallese
H-Index: 19
Design space of quantum dot spin qubits
Physica B: Condensed Matter
2023/10/1
Jean-Michel Sallese
H-Index: 19
Farzan Jazaeri
H-Index: 18
Time-Resolved Multi-Gate Ion Sensitive Field Effect Transducer and System and Method of Operating the Same
2023/5/4
Fab-to-fab and run-to-run variability in 130 nm and 65 nm CMOS technologies exposed to ultra-high TID
Journal of Instrumentation
2023/1/26
Tunneling Current Through a Double Quantum Dots System
Ieee Access
2022/7/13
Jean-Michel Sallese
H-Index: 19
Farzan Jazaeri
H-Index: 18
Accounting for Optical Generation in the Quasi-Neutral Regions of Perovskite Solar Cells
IEEE Journal of the Electron Devices Society
2022/6/20
Parnian Ferdowsi
H-Index: 6
Farzan Jazaeri
H-Index: 18
Efrain Ochoa-Martinez
H-Index: 5
Michael Saliba
H-Index: 59
Jean-Michel Sallese
H-Index: 19
Design space of negative capacitance in FETs
IEEE Transactions on Nanotechnology
2022/5/11
Farzan Jazaeri
H-Index: 18
Jean-Michel Sallese
H-Index: 19
Analytic modelling of passive microfluidic mixers
Mathematical Biosciences and Engineering
2022/2/11
Nonhysteretic condition in negative capacitance junctionless FETs
IEEE Transactions on Electron Devices
2021/12/21
Farzan Jazaeri
H-Index: 18
Jean-Michel Sallese
H-Index: 19
Theoretical Studies of Nanowire Ion-Sensitive Field Effect Transistor
Journal of Contemporary Physics (Armenian Academy of Sciences)
2021/10
Charge-based modeling of field effect transistors, Make it easy
2021/9/1
Jean-Michel Sallese
H-Index: 19
Compact Analytical Model of Nanowire Junctionless ISFET
2021/6/24
Jean-Michel Sallese
H-Index: 19
Modeling funneling effect with generalized devices for SPICE simulation of soft errors
IEEE Transactions on Electron Devices
2021/5/12
Chiara Rossi
H-Index: 3
Jean-Michel Sallese
H-Index: 19
New architecture for the analog front-end of Medipix4
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
2020/10/21
Free Carrier Mobility, Series Resistance, and Threshold Voltage Extraction in Junction FETs
IEEE Transactions on Electron Devices
2020/10/6
Nikolaos Makris
H-Index: 7
Matthias Bucher
H-Index: 12
Farzan Jazaeri
H-Index: 18
Jean-Michel Sallese
H-Index: 19
A Beam Profile Monitor for High Energy Proton Beams Using Microfabrication Techniques
2020/10/1
Jean-Michel Sallese
H-Index: 19
