ProfessorsProfessors of Indian Institute of Technology KanpurJay Hind Kumar Verma

Jay Hind Kumar Verma

Indian Institute of Technology Kanpur

H-index: 4

Asia-India

About Jay Hind Kumar Verma

Jay Hind Kumar Verma, With an exceptional h-index of 4 and a recent h-index of 3 (since 2020), a distinguished researcher at Indian Institute of Technology Kanpur, specializes in the field of Semiconductor Device Modeling and Simulation, MOSFET, BSIM.

His recent articles reflect a diverse array of research interests and contributions to the field:

Investigation of standard and enclosed gate n-MOSFET degradation due to total ionizing dose using BSIM-BULK

Modeling of RF Bulk and SOI Planar MOSFETs using Industry Standard BSIM Models

Temperature dependent performance evaluation and linearity analysis of double gate-all-around (DGAA) MOSFET: an advance multigate structure

Jay Hind Kumar Verma Information

University	Indian Institute of Technology Kanpur
Position	Postdoc Electrical Engineering
Citations(all)	65
Citations(since 2020)	47
Cited By	50
hIndex(all)	4
hIndex(since 2020)	3
i10Index(all)	2
i10Index(since 2020)	2
Email	Access Email
University Profile Page	Indian Institute of Technology Kanpur
Google Scholar	View Google Scholar Profile

Jay Hind Kumar Verma Skills & Research Interests

Semiconductor Device Modeling and Simulation

MOSFET

BSIM

Top articles of Jay Hind Kumar Verma

Title	Journal	Author(s)	Publication Date
Investigation of standard and enclosed gate n-MOSFET degradation due to total ionizing dose using BSIM-BULK		Jay Hind Kumar Verma Yogesh Singh Chauhan	2020/4/6
Modeling of RF Bulk and SOI Planar MOSFETs using Industry Standard BSIM Models		Aarti Rathi Manoj Kumar Jayhind K Verma HS Jatana Yogesh S Chauhan ...	2020/11/26
Temperature dependent performance evaluation and linearity analysis of double gate-all-around (DGAA) MOSFET: an advance multigate structure	Silicon	Yogesh Pratap Jay Hind Kumar Verma	2020/11