javier martin-martinez

javier martin-martinez

Universidad Autónoma de Barcelona

H-index: 22

Europe-Spain

About javier martin-martinez

javier martin-martinez, With an exceptional h-index of 22 and a recent h-index of 16 (since 2020), a distinguished researcher at Universidad Autónoma de Barcelona,

His recent articles reflect a diverse array of research interests and contributions to the field:

Assessment of the variability of the IV characteristic of HfO2-based resistive switching devices and its simulation using the quasi-static memdiode model

Strategies for parameter extraction of the time constant distribution of time-dependent variability models for nanometer-scale devices

Impact of OFF-State, HCI and BTI degradation in FDSOI Ω-gate NW-FETs

Challenges and solutions to the defect-centric modeling and circuit simulation of time-dependent variability

Resistive switching like-behavior in FD-SOI Ω-gate transistors

Random Telegraph Noise and Bias Temperature Instabilities statistical characterization of Ω-gate FDSOI devices at low voltages

CMOS inverter performance degradation and its correlation with BTI, HCI and OFF state MOSFETs aging

Comparison of OFF-State, HCI and BTI degradation in FDSOI Ω-gate NW-FETs

javier martin-martinez Information

University

Position

___

Citations(all)

2014

Citations(since 2020)

975

Cited By

1391

hIndex(all)

22

hIndex(since 2020)

16

i10Index(all)

50

i10Index(since 2020)

32

Email

University Profile Page

Universidad Autónoma de Barcelona

Google Scholar

View Google Scholar Profile

Top articles of javier martin-martinez

Title

Journal

Author(s)

Publication Date

Assessment of the variability of the IV characteristic of HfO2-based resistive switching devices and its simulation using the quasi-static memdiode model

Solid-State Electronics

E Salvador

MB Gonzalez

F Campabadal

J Martin-Martinez

R Rodriguez

...

2023/8/1

Strategies for parameter extraction of the time constant distribution of time-dependent variability models for nanometer-scale devices

FV Fernandez

E Roca

P Sarazá

J Martin-Martinez

R Rodriguez

...

2023/7/3

Impact of OFF-State, HCI and BTI degradation in FDSOI Ω-gate NW-FETs

Solid-State Electronics

Carlos Valdivieso

Albert Crespo-Yepes

R Miranda

D Bernal

Javier Martin-Martinez

...

2023/5/1

Challenges and solutions to the defect-centric modeling and circuit simulation of time-dependent variability

Javier Martin-Martinez

Javier Diaz-Fortuny

Pablo Saraza-Canflanca

Rosana Rodriguez

Rafael Castro-Lopez

...

2023/3/26

Resistive switching like-behavior in FD-SOI Ω-gate transistors

Solid-State Electronics

Carlos Valdivieso

R Rodriguez

Albert Crespo-Yepes

Javier Martin-Martinez

M Nafria

2023/11/1

Random Telegraph Noise and Bias Temperature Instabilities statistical characterization of Ω-gate FDSOI devices at low voltages

Solid-State Electronics

G Pedreira

Javier Martin-Martinez

Albert Crespo-Yepes

E Amat

R Rodriguez

...

2023/11/1

CMOS inverter performance degradation and its correlation with BTI, HCI and OFF state MOSFETs aging

Solid-state electronics

Albert Crespo-Yepes

C Nasarre

N Garsot

Javier Martin-Martinez

R Rodriguez

...

2022/5/1

Comparison of OFF-State, HCI and BTI degradation in FDSOI Ω-gate NW-FETs

Solid-State Electronics

Carlos Valdivieso

Albert Crespo-Yepes

R Miranda

D Bernal

Javier Martin-Martinez

...

2022/8/1

Stochastic resonance effect in binary STDP performed by RRAM devices

Emili Salvador

Rosana Rodriguez

Javier Martin-Martinez

Albert Crespo-Yepes

Enrique Miranda

...

2022/7/4

A systematic approach to RTN parameter fitting based on the Maximum Current Fluctuation

Pablo Saraza-Canflanca

Javier Martín-Martínez

Elisenda Roca

Rafael Castro-López

Rosana Rodríguez

...

2022/6/12

Beneficial role of noise in hf-based memristors

Rosana Rodriguez

Javier Martin-Martinez

Emili Salvador

Albert Crespo-Yepes

Enrique Miranda

...

2022/5/27

On the impact of the biasing history on the characterization of random telegraph noise

IEEE Transactions on Instrumentation and Measurement

Pablo Saraza-Canflanca

Rafael Castro-Lopez

Elisenda Roca

Javier Martin-Martinez

Rosana Rodriguez

...

2022/5/27

Determination of the time constant distribution of a defect-centric time-dependent variability model for sub-100-nm FETs

IEEE Transactions on Electron Devices

Pablo Saraza-Canflanca

Rafael Castro-Lopez

Elisenda Roca

Javier Martin-Martinez

R Rodriguez

...

2022/8/25

Combined effects of BTI, HCI and OFF-State MOSFETs Aging on the CMOS Inverter Performance

A Crespo-Yepes

C Nasarre

N Garsot

J Martin-Martinez

R Rodriguez

...

2021/9/1

Unified RTN and BTI statistical compact modeling from a defect-centric perspective

Solid-State Electronics

G Pedreira

Javier Martin-Martinez

Pablo Saraza-Canflanca

Rafael Castro-Lopez

R Rodriguez

...

2021/11/1

Simulating the impact of random telegraph noise on integrated circuits

Pablo Saraza-Canflanca

Eros Camacho-Ruiz

Rafael Castro-Lopez

Elisenda Roca

Javier Martin-Martinez

...

2021/7/19

Statistical threshold voltage shifts caused by BTI and HCI at nominal and accelerated conditions

Solid-State Electronics

Javier Diaz-Fortuny

Pablo Saraza-Canflanca

Rosana Rodriguez

Javier Martin-Martinez

Rafael Castro-Lopez

...

2021/11/1

Statistical characterization of time-dependent variability defects using the maximum current fluctuation

IEEE Transactions on Electron Devices

Pablo Saraza-Canflanca

Javier Martín-Martínez

Rafael Castro-Lopez

Elisenda Roca

R Rodriguez

...

2021/6/17

SPICE modeling of cycle-to-cycle variability in RRAM devices

Solid-State Electronics

E Salvador

MB Gonzalez

Francesca Campabadal

Javier Martin-Martinez

R Rodriguez

...

2021/11/1

Circuit reliability prediction: challenges and solutions for the device time-dependent variability characterization roadblock

M Nafria

J Diaz-Fortuny

P Saraza-Canflanca

J Martin-Martinez

Elisenda Roca

...

2021/4/19

See List of Professors in javier martin-martinez University(Universidad Autónoma de Barcelona)