Hyunsang Hwang
Pohang University of Science and Technology
H-index: 73
Asia-South Korea
Top articles of Hyunsang Hwang
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
Variability and Reliability Study of Nano-scale Hf0.5Zr0.5O2 Ferroelectric Devices Using O3 Treatment | IEEE Electron Device Letters | Hojung Jang Alireza Kashir Seungyeol Oh Kyumin Lee Laeyong Jung | 2024/1/17 |
Analog-stochastic converter for converting analog signal into probability signal based on threshold switching element | 2024/4/16 | ||
Understanding Switching Mechanism of Selector-Only Memory Using Se-Based Ovonic Threshold Switch Device | IEEE Transactions on Electron Devices | Jangseop Lee Yoori Seo Sanghyun Ban Dong Gwan Kim Yu Bin Park | 2024/3/27 |
Enhanced ON/OFF Ratio (4× 105) and Robust Endurance (> 1010) in an InGaZnO/HfxZr1-xO2 Ferroelectric Diode via Defect Engineering | IEEE Transactions on Electron Devices | Laeyong Jung Seungyeol Oh Hojung Jang Kyumin Lee Wooseok Choi | 2024/3 |
Enhanced on/off Ratio (4$\times $10$^{\text {5}}\text {)} $ and Robust Endurance ($> $10$^{\text {10}}\text {)} $ in an InGaZnO/Hf $ _ {\text {x}} $ Zr $ _ {\text {1-\text {x … | IEEE Transactions on Electron Devices | Laeyong Jung Seungyeol Oh Hojung Jang Kyumin Lee Wooseok Choi | 2024/2/6 |
Apparatus for implementing hardware-based dropout for artificial neural network using selector element and neural network circuit system using the same | 2023/11/30 | ||
Cell Design Considerations for Ovonic Threshold Switch-Based 3-D Cross-Point Array | IEEE Transactions on Electron Devices | Sanghyun Ban Jangseop Lee Taehoon Kim Hyunsang Hwang | 2023/1/20 |
Composition optimization of HfxZr1-xO2 thin films to achieve the morphotrophic phase boundary for high-k dielectrics | Journal of Applied Physics | Seungyeol Oh Hojung Jang Hyunsang Hwang | 2023/4/21 |
Weight confirmation method for an analog synaptic device of an artificial neural network | 2023/6/15 | ||
High-performance RRAM using two-dimensional electron gas (2DEG) electrode and Its switching mechanism analysis. | Nanotechnology | J Kim O Kwon K Lee G Han H Hwang | 2023/10/12 |
Subthreshold Bias-Induced Threshold Voltage Shift of the Ovonic Threshold Switch | IEEE Electron Device Letters | Sanghyun Ban Jangseop Lee Yoori Seo Ohhyuk Kwon Wootae Lee | 2023/11/28 |
Enhancement of NbO2-based oscillator neuron device performance via cryogenic operation | Nanotechnology | Ohhyuk Kwon Seongjae Heo Dongmin Kim Jiho Kim Hyunsang Hwang | 2023/12/27 |
NbO2 selector device with Ge2Sb2Te5 thermal barrier for low off current (300 nA) and low power operation | Applied Physics Letters | Ohhyuk Kwon Jangseop Lee Kyumin Lee Wooseok Choi Hyunsang Hwang | 2023/3/13 |
Novel high-speed ternary logic using step-shaped threshold switch | IEEE Electron Device Letters | Junjong Lee Seongjae Heo Hyunsang Hwang Rock-Hyun Baek | 2023/1/17 |
Simple Binary In-Te OTS with Sub-nm HfOₓ Buffer Layer for 3D Vertical X-point Memory Applications | Sanghyun Ban Jangseop Lee Taehoon Kim Hyunsang Hwang | 2023/6/11 | |
Exploring the Cutting‐Edge Frontiers of Electrochemical Random Access Memories (ECRAMs) for Neuromorphic Computing: Revolutionary Advances in Material‐to‐Device Engineering | Revannath Dnyandeo Nikam Jongwon Lee Kyumin Lee Hyunsang Hwang | 2023/10 | |
Accurate Evaluation of High-k HZO/ZrO2 Films by Morphotropic Phase Boundary | IEEE Electron Device Letters | Seungyeol Oh Hojung Jang Hyunsang Hwang | 2023/11/8 |
Superior retention (> 1 year, 85° C) and memory window (~ 1.8 V) using ultra-thin HZO FTJ with OTS selector for X-point memory applications | Laeyong Jung Jangseop Lee Seungyeol Oh Hyunsang Hwang | 2023/12/9 | |
Two-terminal atom-based switching device and manufacturing method thereof | 2023/3/2 | ||
Experimental Demonstration of Probabilistic-Bit (p-bit) Utilizing Stochastic Oscillation of Threshold Switch Device | Seongjae Heo Dongmin Kim Wooseok Choi Sanghyun Ban Ohhyuk Kwon | 2023/6/11 |
Co-Authors
