Ho-Young Cha

Ho-Young Cha

Hongik University

H-index: 26

Asia-South Korea

About Ho-Young Cha

Ho-Young Cha, With an exceptional h-index of 26 and a recent h-index of 16 (since 2020), a distinguished researcher at Hongik University, specializes in the field of Wide bandgap semiconductors.

His recent articles reflect a diverse array of research interests and contributions to the field:

Enhancement mode β-(Al0. 19Ga0. 81) 2O3/Ga2O3 HFETs with superlattice back-barrier layer

Normally-off recessed gate β-Ga2O3 MOSHFETs with a modulation-doped heterostructure back-barrier

Fluorine-Based Low-Damage Selective Etching Process for E-Mode p-GaN/AlGaN/GaN HFET Fabrication

Recess-Free E-Mode AlGaN/GaN MIS-HFET with Crystalline PEALD AlN Passivation Process

High Selectivity Hydrogen Gas Sensor Based on WO3/Pd-AlGaN/GaN HEMTs

Design of Trench MIS Field Plate Structure for Edge Termination of GaN Vertical PN Diode

Electrical properties of 2H-Si microwire grown by mixed-source hydride vapor phase epitaxy

Improved Response Characteristics of GaN-Based Hydrogen Sensor with SnO2 Nanoparticles

Ho-Young Cha Information

University

Position

___

Citations(all)

2628

Citations(since 2020)

1062

Cited By

2046

hIndex(all)

26

hIndex(since 2020)

16

i10Index(all)

67

i10Index(since 2020)

33

Email

University Profile Page

Hongik University

Google Scholar

View Google Scholar Profile

Ho-Young Cha Skills & Research Interests

Wide bandgap semiconductors

Top articles of Ho-Young Cha

Title

Journal

Author(s)

Publication Date

Enhancement mode β-(Al0. 19Ga0. 81) 2O3/Ga2O3 HFETs with superlattice back-barrier layer

Micro and Nanostructures

Gökhan Atmaca

Ho-Young Cha

2024/5/1

Normally-off recessed gate β-Ga2O3 MOSHFETs with a modulation-doped heterostructure back-barrier

Physica Scripta

Gökhan Atmaca

Ho-Young Cha

2024/2/1

Fluorine-Based Low-Damage Selective Etching Process for E-Mode p-GaN/AlGaN/GaN HFET Fabrication

Electronics

Hyeon-Ji Kim

Jun-Hyeok Yim

Hyungtak Kim

Ho-Young Cha

2023/10/20

Recess-Free E-Mode AlGaN/GaN MIS-HFET with Crystalline PEALD AlN Passivation Process

Electronics

Won-Ho Jang

Jun-Hyeok Yim

Hyungtak Kim

Ho-Young Cha

2023/3/31

High Selectivity Hydrogen Gas Sensor Based on WO3/Pd-AlGaN/GaN HEMTs

Sensors

Van Cuong Nguyen

Ho-Young Cha

Hyungtak Kim

2023/3/26

Design of Trench MIS Field Plate Structure for Edge Termination of GaN Vertical PN Diode

Micromachines

Sung-Hoon Lee

Ho-Young Cha

2023/10/28

Electrical properties of 2H-Si microwire grown by mixed-source hydride vapor phase epitaxy

Results in Physics

Seungheon Shin

Kyoung Hwa Kim

Gang Seok Lee

Jae Hak Lee

Hyung Soo Ahn

...

2022/9/1

Improved Response Characteristics of GaN-Based Hydrogen Sensor with SnO2 Nanoparticles

The Journal of Korean Institute of Electromagnetic Engineering and Science

Won-Tae Choi

Tae-Hyun Park

Jae-Hyun Hur

Jeong-Jin Kim

Ho-Young Cha

2022

Normally-off β-Ga2O3 MOSFET with an Epitaxial Drift Layer

Micromachines

Chan-Hee Jang

Gökhan Atmaca

Ho-Young Cha

2022/7/27

β‐(Al0.17Ga0.83)2O3/Ga2O3 Delta‐Doped Heterostructure MODFETs with an Ultrathin Spacer Layer and a Back‐Barrier Layer: A Comprehensive …

physica status solidi (a)

Gökhan Atmaca

Ho-Young Cha

2022/6

Analysis of Hot Carrier Degradation in 0.25-μm Schottky Gate AlGaN/GaN HEMTs

Journal of Electromagnetic Engineering and Science

Seong-In Cho

Won-Ho Jang

Ho-Young Cha

Hyungtak Kim

2022/5/31

Low-Frequency Noise Characteristics in HfO2-Based Metal-Ferroelectric-Metal Capacitors

Materials

Ki-Sik Im

Seungheon Shin

Chan-Hee Jang

Ho-Young Cha

2022/10/25

Temperature- and Frequency-Dependent Ferroelectric Characteristics of Metal-Ferroelectric-Metal Capacitors with Atomic-Layer-Deposited Undoped HfO2 Films

Materials

Chan-Hee Jang

Hyun-Seop Kim

Hyungtak Kim

Ho-Young Cha

2022/3/12

Delta‐Doped β‐(Al0.17Ga0.83)2O3/Ga2O3 Double‐Channel Heterostructure MODFETs

physica status solidi (a)

Gökhan Atmaca

Ho-Young Cha

2022/10

On/off-state noise characteristics in AlGaN/GaN HFET with AlN buffer layer

Applied Physics Letters

Ki-Sik Im

Uiho Choi

Minho Kim

Jinseok Choi

Hyun-Seop Kim

...

2022/1/3

Operation of NO2 Gas Sensors based on Pd-AlGaN/GaN HEMT up to 500° C

Van Cuong Nguyen

Ho-Young Cha

Hyungtak Kim

2021

Response enhancement of pt–algan/gan hemt gas sensors by thin algan barrier with the source-connected gate configuration at high temperature

Micromachines

Tuan-Anh Vuong

Ho-Young Cha

Hyungtak Kim

2021/5/10

Proton Irradiation Effects on GaN-based devices

Journal of Semiconductor Engineering

Dongmin Keum

Hyungtak Kim

Ho-Young Cha

2021

Crystalline AlN interfacial layer on GaN using plasma-enhanced atomic layer deposition

Crystals

Il-Hwan Hwang

Myoung-Jin Kang

Ho-Young Cha

Kwang-Seok Seo

2021/4/10

Operation of NO₂ Gas Sensors based on Pd-AlGaN/GaN HEMT up to 500° C

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE

Van Cuong Nguyen

Ho-young Cha

Hyungtak Kim

2021/12

See List of Professors in Ho-Young Cha University(Hongik University)