Hadis Morkoç
Virginia Commonwealth University
H-index: 121
North America-United States
Top articles of Hadis Morkoç
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
Reduction in density of interface traps determined by CV analysis in III-nitride-based MOSHFET structure | Applied Physics Letters | Samiul Hasan Mohi Uddin Jewel Scott R Crittenden Md Ghulam Zakir Nifat Jahan Nipa | 2024/3/11 |
Gallium Nitride Materials and Devices XIX | Proc. of SPIE Vol | Hiroshi Fujioka Hadis Morkoç Ulrich T Schwarz | 2024/1/29 |
Hot-Electron Microwave Noise and Energy Relaxation in (Be) MgZnO/ZnO Heterostructures | Crystals | Emilis Šermukšnis Artūr Šimukovič Vitaliy Avrutin Natalia Izyumskaya Ümit Özgür | 2024/1/12 |
MOCVD-grown β-Ga2O3 as a Gate Dielectric on AlGaN/GaN-Based Heterojunction Field Effect Transistor | Crystals | Samiul Hasan Mohi Uddin Jewel Scott R Crittenden Dongkyu Lee Vitaliy Avrutin | 2023/1/28 |
Phase Stabilized MOCVD Growth of β‐Ga2O3 Using SiOx on c‐Plane Sapphire and AlN/Sapphire Template | physica status solidi (a) | Mohi Uddin Jewel Samiul Hasan Scott R Crittenden Vitaliy Avrutin Ümit Özgür | 2023/6 |
MOCVD-Grown Ga2O3 as a Gate Dielectric on Algan/Gan Based Heterojunction Field Effect Transistor | Samiul Hasan Mohi Uddin Jewel Scott R Crittenden Dongkyu Lee Vitaliy Avrutin | 2023/1/10 | |
High-field electron transport and microwave noise in ZnO channels with 2 dimensional electron gas (Conference Presentation) | Vitaliy S Avrutin Ümit Özgür Hadis Morkoç Linas Ardaravičius Arthur Šimukovič | 2023/3/16 | |
Demonstration of thick phase-pure β-Ga2O3 on a c-plane sapphire substrate using MOCVD | Mohi Uddin Jewel Samiul Hasan Scott R Crittenden Vitaliy Avrutin Ümit Özgür | 2023/3/16 | |
Investigation of plasmonic losses in TCOs based on heavily doped ZnO (Conference Presentation) | Vitaliy S Avrutin Dhruv Fomra Nathaniel Kinsey Natalia Izyumskaya Ümit Özgür | 2023/3/16 | |
Gate leakage current and threshold voltage characteristics of β-Ga2O3 passivated AlGaN/GaN based heterojunction field effect transistor | Samiul Hasan Mohi Uddin Jewel Scott R Crittenden Dongkyu Lee Vitaliy S Avrutin | 2023/3/15 | |
Determination of hot-electron drift velocity in (Be) ZnMgO/ZnO 2DEG channels | Physica Scripta | Linas Ardaravičius Oleg Kiprijanovič Emilis Šermukšnis Vitaliy Avrutin Ümit Özgür | 2022/12/6 |
Gallium Nitride Materials and Devices XVII | Proc. of SPIE Vol | Hiroshi Fujioka Hadis Morkoç Ulrich T Schwarz | 2022 |
A Platform for Complementary Metal‐Oxide‐Semiconductor Compatible Plasmonics: High Plasmonic Quality Titanium Nitride Thin Films on Si (001) with a MgO Interlayer | Advanced Photonics Research | Kai Ding Dhruv Fomra Alexander V Kvit Hadis Morkoç Nathaniel Kinsey | 2021/7 |
Self-formation of high-field domain in epitaxial ZnO and its suppression in ZnO/MgZnO heterostructure | Applied Physics Letters | E Šermukšnis J Liberis A Šimukovič A Matulionis K Ding | 2021/6/21 |
DC and microwave performance of BeMgZnO/ZnO heterostructure field effect transistors | Kai Ding Vitaliy Avrutin Natalia Izyumskaya Ümit Özgür Hadis Morkoç | 2021/3/5 | |
Defects in MBE and MOCVD-grown GaAs on Si | DJ Eaglesham R Devenish RT Fan CJ Humphreys H Morkoc | 2021/1/31 | |
Gallium Nitride Materials and Devices XVI | Proc. of SPIE Vol | Hiroshi Fujioka Hadis Morkoç Ulrich T Schwarz | 2021 |
High‐Quality Plasmonic Materials TiN and ZnO: Al by Atomic Layer Deposition | Natalia Izyumskaya Dhruv Fomra Kai Ding Hadis Morkoç Nathaniel Kinsey | 2021/10 | |
High‐performance BeMgZnO/ZnO heterostructure field‐effect transistors | physica status solidi (RRL)–Rapid Research Letters | Kai Ding Vitaliy Avrutin Natalia Izyumskaya Ümit Özgür Hadis Morkoç | 2020/12 |
BeMgZnO wide bandgap quaternary alloy semiconductor | Kai Ding Vitaliy Avrutin Natalia Izyumskaya Ümit Özgür Hadis Morkoç | 2020/9/1 |
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