Giovanni Ghione

Giovanni Ghione

Politecnico di Torino

H-index: 38

Europe-Italy

About Giovanni Ghione

Giovanni Ghione, With an exceptional h-index of 38 and a recent h-index of 19 (since 2020), a distinguished researcher at Politecnico di Torino, specializes in the field of RF electronics, Optoelectronics, Electron devices, Widegap semiconductors, Device noise.

His recent articles reflect a diverse array of research interests and contributions to the field:

Revisiting the Power Gains of a Loaded Two-Port: Is There a Missing Element?

TCAD-assisted progress on the CISCO platform towards low-bias 200 Gbit/s vertical-pin Ge-on-Si waveguide photodetectors

Spatial distribution of microwave device harmonic electrical variables through T-dependent TCAD simulations

Different approximations for carriers lifetimes in HgCdTe quasi-neutral regions

Modeling the electronic transport in FinFET-like lateral Ge-on-Si pin waveguide photodetectors for ultra-wide bandwidth applications

On the Lower Bound to the Input and Output Mismatch of Conditionally Stable Linear Two-Ports

Towards 200 Gbit/s low-bias-operation vertical Ge-on-Si waveguide photodetectors

Exploring Optimal Dark Current Design in HgCdTe Infrared Barrier Detectors: a TCAD and Semianalytic Investigation

Giovanni Ghione Information

University

Position

Professore ordinario di elettronica

Citations(all)

7020

Citations(since 2020)

1913

Cited By

6065

hIndex(all)

38

hIndex(since 2020)

19

i10Index(all)

145

i10Index(since 2020)

56

Email

University Profile Page

Politecnico di Torino

Google Scholar

View Google Scholar Profile

Giovanni Ghione Skills & Research Interests

RF electronics

Optoelectronics

Electron devices

Widegap semiconductors

Device noise

Top articles of Giovanni Ghione

Title

Journal

Author(s)

Publication Date

Revisiting the Power Gains of a Loaded Two-Port: Is There a Missing Element?

Giovanni Ghione

Marco Pirola

2024/1/29

TCAD-assisted progress on the CISCO platform towards low-bias 200 Gbit/s vertical-pin Ge-on-Si waveguide photodetectors

Journal of Lightwave Technology

Matteo GC Alasio

Marco Vallone

Alberto Tibaldi

Soha Namnabat

Donald Adams

...

2024/1/10

Spatial distribution of microwave device harmonic electrical variables through T-dependent TCAD simulations

E Catoggio

S Donati Guerrieri

F Bonani

G Ghione

2023/7/6

Different approximations for carriers lifetimes in HgCdTe quasi-neutral regions

M Vallone

MGC Alasio

A Tibaldi

F Bertazzi

S Hanna

...

2023/9/18

Modeling the electronic transport in FinFET-like lateral Ge-on-Si pin waveguide photodetectors for ultra-wide bandwidth applications

Matteo GC Alasio

Mike Zhu

Antonio Fronteddu

Alessandro Cardinale

Andrea Ballarati

...

2023/9/18

On the Lower Bound to the Input and Output Mismatch of Conditionally Stable Linear Two-Ports

IEEE Journal of Microwaves

Giovanni Ghione

Marco Pirola

2023/8/2

Towards 200 Gbit/s low-bias-operation vertical Ge-on-Si waveguide photodetectors

Matteo Alasio

Marco Vallone

Alberto Tibaldi

Soha Namnabat

Donald Adams

...

2023/7/26

Exploring Optimal Dark Current Design in HgCdTe Infrared Barrier Detectors: a TCAD and Semianalytic Investigation

IEEE Photonics Journal

Marco Vallone

Matteo GC Alasio

Alberto Tibaldi

Francesco Bertazzi

Stefan Hanna

...

2023/12/21

The ENERGY ECS Project: Smart and Secure Energy Solutions for Future Mobility

Aldo Romani

Marco Crescentini

Cristina Rusu

Henrik Staaf

Marco Ambrosio

...

2023/7/17

Modeling the effects of graded and abrupt mole fraction profiles in pBn and nBn HgCdTe barrier detectors

Matteo Alasio

Marco Vallone

Paolo Molino

Luca Errico

Stefan Hanna

...

2023/10/10

Efficient TCAD temperature-dependent large-signal simulation of a FinFET power amplifier

E Catoggio

S Donati Guerrieri

F Bonani

G Ghione

2022/4/3

Analysis and Design of Plasmonic-Organic Hybrid Electro-Optic Modulators Based on Directional Couplers

IEEE Photonics Journal

Alberto Tibaldi

Mohammadamin Ghomashi

Francesco Bertazzi

Marco Vallone

Michele Goano

...

2022/2/1

Kudos to Our Reviewers… and a Big Thanks!

IEEE Transactions on Electron Devices

Giovanni Ghione

2022/12/1

3D multiphysics transient modeling of vertical Ge-on-Si pin waveguide photodetectors

Alasio Matteo GC

Paolo Franco

Alberto Tibaldi

Francesco Bertazzi

Soha Namnabat

...

2022/9/12

Optical Power Screening Effects in Ge-on-Si Vertical Pin Photodetectors

Matteo GC Alasio

Paolo Franco

Alberto Tibaldi

Francesco Bertazzi

Soha Namnabat

...

2023/2/28

Modeling the frequency response of vertical and lateral Ge-on-Si waveguide photodetectors: Is 3D simulation unavoidable?

Matteo Giovanni Carmelo Alasio

Marco Vallone

Alberto Tibaldi

Francesco Bertazzi

Soha Namnabat

...

2022/5/15

Global Assessment of PA variability through concurrent Physics-based X-parameter and Electro-Magnetic simulations

S Donati Guerrieri

C Ramella

F Bonani

G Ghione

2021/1/10

Ge-on-Si waveguide photodetectors: multiphysics modeling and experimental validation

Matteo GC Alasio

Michele Goano

Alberto Tibaldi

Francesco Bertazzi

Soha Namnabat

...

2021/9/13

Plasmonic nanorods for enhanced absorption in mid-wavelength infrared detectors

M Vallone

M Goano

A Tibaldi

S Hanna

D Eich

...

2021/9/13

Organic Electro‐Optic Mach–Zehnder Modulators: From Physics‐Based to System‐Level Modeling

Alberto Tibaldi

Mohammadamin Ghomashi

Francesco Bertazzi

Michele Goano

Marco Vallone

...

2021/11

See List of Professors in Giovanni Ghione University(Politecnico di Torino)

Co-Authors

H-index: 86
Ming C. Wu

Ming C. Wu

University of California, Berkeley

H-index: 83
Aldo Di Carlo

Aldo Di Carlo

Università degli Studi di Roma Tor Vergata

H-index: 68
Gaudenzio Meneghesso

Gaudenzio Meneghesso

Università degli Studi di Padova

H-index: 38
Andrea Reale

Andrea Reale

Università degli Studi di Roma Tor Vergata

H-index: 37
Tobin A. Driscoll

Tobin A. Driscoll

University of Delaware

H-index: 33
Michele Goano

Michele Goano

Politecnico di Torino

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