Giovanni Capellini

Giovanni Capellini

Università degli Studi Roma Tre

H-index: 42

Europe-Italy

About Giovanni Capellini

Giovanni Capellini, With an exceptional h-index of 42 and a recent h-index of 24 (since 2020), a distinguished researcher at Università degli Studi Roma Tre, specializes in the field of Condensed Matter Physics, Nanotechnology & Nanoscience, Materials science.

His recent articles reflect a diverse array of research interests and contributions to the field:

Three-dimensional reconstruction of interface roughness and alloy disorder in Ge/GeSi asymmetric coupled quantum wells using electron tomography

Selective Growth of GaP Crystals on CMOS-Compatible Si Nanotip Wafers by Gas Source Molecular Beam Epitaxy

All epitaxial self-assembly of vertically-confined silicon color centers using ultra-low temperature epitaxy

Thermal expansion and temperature dependence of Raman modes in epitaxial layers of Ge and

Asymmetric-coupled Ge/SiGe quantum wells for second harmonic generation at 7.1 THz in integrated waveguides: a theoretical study

High-quality CMOS compatible n-type SiGe parabolic quantum wells for intersubband photonics at 2.5–5 THz

Selective Epitaxy of Germanium on silicon for the fabrication of CMOS compatible short-wavelength infrared photodetectors

Electrically pumped GeSn/SiGeSn micro-rings lasers on Si with minimum threshold current of 40 mA

Giovanni Capellini Information

University

Position

Full Professor Experimental condensed matter Physics Dip. di Scienze e IHP

Citations(all)

6587

Citations(since 2020)

2578

Cited By

5028

hIndex(all)

42

hIndex(since 2020)

24

i10Index(all)

137

i10Index(since 2020)

75

Email

University Profile Page

Università degli Studi Roma Tre

Google Scholar

View Google Scholar Profile

Giovanni Capellini Skills & Research Interests

Condensed Matter Physics

Nanotechnology & Nanoscience

Materials science

Top articles of Giovanni Capellini

Title

Journal

Author(s)

Publication Date

Three-dimensional reconstruction of interface roughness and alloy disorder in Ge/GeSi asymmetric coupled quantum wells using electron tomography

ACS Applied Materials & Interfaces

Ekaterina Paysen

Giovanni Capellini

Enrico Talamas Simola

Luciana Di Gaspare

Monica De Seta

...

2024/1/8

Selective Growth of GaP Crystals on CMOS-Compatible Si Nanotip Wafers by Gas Source Molecular Beam Epitaxy

Crystal Growth & Design

Navid Kafi

Songdan Kang

Christian Golz

Adriana Rodrigues-Weisensee

Luca Persichetti

...

2024/3/20

All epitaxial self-assembly of vertically-confined silicon color centers using ultra-low temperature epitaxy

arXiv preprint arXiv:2402.19227

Johannes Aberl

Enrique Prado Navarrete

Merve Karaman

Diego Haya Enriquez

Christoph Wilflingseder

...

2024/2/29

Thermal expansion and temperature dependence of Raman modes in epitaxial layers of Ge and

Physical Review Materials

Agnieszka Anna Corley-Wiciak

Diana Ryzhak

Marvin Hartwig Zoellner

Costanza Lucia Manganelli

Omar Concepción

...

2024/2/1

Asymmetric-coupled Ge/SiGe quantum wells for second harmonic generation at 7.1 THz in integrated waveguides: a theoretical study

Nanophotonics

Enrico Talamas Simola

Michele Ortolani

Luciana Di Gaspare

Giovanni Capellini

Monica De Seta

...

2024/1/18

High-quality CMOS compatible n-type SiGe parabolic quantum wells for intersubband photonics at 2.5–5 THz

Nanophotonics

Elena Campagna

Enrico Talamas Simola

Tommaso Venanzi

Fritz Berkmann

Cedric Corley-Wiciak

...

2024/1/15

Selective Epitaxy of Germanium on silicon for the fabrication of CMOS compatible short-wavelength infrared photodetectors

Materials Science in Semiconductor Processing

Diana Ryzhak

Agnieszka Anna Corley-Wiciak

Patrick Steglich

Yuji Yamamoto

Jacopo Frigerio

...

2024/6/15

Electrically pumped GeSn/SiGeSn micro-rings lasers on Si with minimum threshold current of 40 mA

Teren Liu

Lukas Seidel

Bahareh Marzban

Michael Oehme

Jeremy Witzens

...

2023/4/4

Lattice deformation at the sub-micron scale: X-ray nanobeam measurements of elastic strain in electron shuttling devices

Physical Review Applied

C Corley-Wiciak

MH Zoellner

I Zaitsev

K Anand

E Zatterin

...

2023/8/23

Isothermal Heteroepitaxy of Ge1–xSnx Structures for Electronic and Photonic Applications

ACS applied electronic materials

Omar Concepción

Nicolaj B Søgaard

Jin-Hee Bae

Yuji Yamamoto

Andreas T Tiedemann

...

2023/4/3

Controlling the Nucleation and Growth of Salt from Bodily Fluid for Enhanced Biosensing Applications

Biosensors

Siddharth Srivastava

Yusuke Terai

Jun Liu

Giovanni Capellini

Ya-Hong Xie

2023/12/6

The local alloy order in GeSn/Ge epitaxial layer

Physical Review Applied

Agnieszka Anna Corley-Wiciak

Shunda Chen

Omar Concepción

Marvin Hartwig Zoellner

Detlev Grützmacher

...

2023/8/8

Nanoscale mapping of the 3D strain tensor in a germanium quantum well hosting a functional spin qubit device

ACS applied materials & interfaces

Cedric Corley-Wiciak

Carsten Richter

Marvin H Zoellner

Ignatii Zaitsev

Costanza L Manganelli

...

2023/1/4

Chemical-physical characterisation of 5-Phenyl-1H-tetrazole inhibitive behaviour: a new non-toxic compound for a sustainable protection of Cu-alloys

Journal of Applied Electrochemistry

Antonella Privitera

Francesco Porcelli

Daniele Paoloni

Luca Persichetti

Giovanni Sotgiu

...

2023/12

Unintentional p-type conductivity in intrinsic Ge-rich SiGe/Ge heterostructures grown on Si (001)

Applied Physics Letters

Henriette Tetzner

W Seifert

Oliver Skibitzki

Yuji Yamamoto

Marco Lisker

...

2023/6/5

Subnanometer Control of the Heteroepitaxial Growth of Multimicrometer-Thick /- Quantum Cascade Structures

Physical Review Applied

Enrico Talamas Simola

Michele Montanari

Cedric Corley-Wiciak

Luciana Di Gaspare

Luca Persichetti

...

2023/1/4

Background Carrier Concentration in Intrinsic Ge-Rich SiGe/Ge Heterostructures Integrated on Si (001)

Henriette Tetzner

Oliver Skibitzki

Winfried Seifert

Marco Lisker

Muhammad M Mirza

...

2023/5/22

MBE-based growth of Sn-rich quantum wells and dots at low Sn deposition rates

Materials Science in Semiconductor Processing

Ahsan Hayat

Davide Spirito

Agnieszka Anna Corley-Wiciak

Markus Andreas Schubert

Maria Masood

...

2023/10/1

SiGeSn/GeSn Multi Quantum Wells Light Emitting Diodes with a Negative Differential Resistance

L Seidel

T Liu

B Marzban

V Kiyek

J Schulze

...

2023/4/4

Strong light-matter coupling in SiGe quantum wells embedded in terahertz patch antenna cavities

M Ortolani

L Baldassarre

T Venanzi

F Berkmann

E Talamas Simola

...

2023/9/17

See List of Professors in Giovanni Capellini University(Università degli Studi Roma Tre)

Co-Authors

H-index: 54
Nunzio Motta

Nunzio Motta

Queensland University of Technology

H-index: 53
Ya-Hong Xie

Ya-Hong Xie

University of California, Los Angeles

H-index: 40
Federico Boscherini

Federico Boscherini

Università degli Studi di Bologna

H-index: 37
Gang Niu

Gang Niu

Xi'an Jiaotong University

H-index: 36
evangelisti f.

evangelisti f.

Università degli Studi Roma Tre

H-index: 34
Giordano Scappucci

Giordano Scappucci

Technische Universiteit Delft

academic-engine