Genquan Han

Genquan Han

Xidian University

H-index: 37

Asia-China

About Genquan Han

Genquan Han, With an exceptional h-index of 37 and a recent h-index of 30 (since 2020), a distinguished researcher at Xidian University, specializes in the field of CMOS, Wide Bandgap Materials and Devices, Photonics.

His recent articles reflect a diverse array of research interests and contributions to the field:

Integration of Ferroelectric Al0.8Sc0.2N on Si (001) Substrate

Current transport mechanism of lateral Schottky barrier diodes on β-Ga2O3/SiC structure with atomic level interface

Double-gated ferroelectric-gate field-effect-transistor for multi-bit content-addressable memories

Steep-slope vertical-transport transistors built from sub-5 nm Thin van der Waals heterostructures

Sensing with extended gate negative capacitance ferroelectric field-effect transistors

Discover Nano

Enhanced fatigue resistance of ferroelectric Al0. 65Sc0. 35N deposited by physical vapor deposition

Multiple High‐Q Optical Modes in a Polymer‐Lithium Niobate Integrated Metasurface

Genquan Han Information

University

Position

___

Citations(all)

5098

Citations(since 2020)

3355

Cited By

2895

hIndex(all)

37

hIndex(since 2020)

30

i10Index(all)

130

i10Index(since 2020)

96

Email

University Profile Page

Xidian University

Google Scholar

View Google Scholar Profile

Genquan Han Skills & Research Interests

CMOS

Wide Bandgap Materials and Devices

Photonics

Top articles of Genquan Han

Title

Journal

Author(s)

Publication Date

Integration of Ferroelectric Al0.8Sc0.2N on Si (001) Substrate

IEEE Electron Device Letters

Wenxin Sun

Jiuren Zhou

Ning Liu

Siying Zheng

Xiaoxi Li

...

2024/2/8

Current transport mechanism of lateral Schottky barrier diodes on β-Ga2O3/SiC structure with atomic level interface

Applied Physics Letters

Wenhui Xu

Zhenghao Shen

Zhenyu Qu

Tiancheng Zhao

Ailun Yi

...

2024/3/11

Double-gated ferroelectric-gate field-effect-transistor for multi-bit content-addressable memories

IEEE Electron Device Letters

Munhyeon Kim

Kitae Lee

Sihyun Kim

Jong-Ho Lee

Byung-Gook Park

...

2021/9/29

Steep-slope vertical-transport transistors built from sub-5 nm Thin van der Waals heterostructures

Nature Communications

Qiyu Yang

Zheng-Dong Luo

Huali Duan

Xuetao Gan

Dawei Zhang

...

2024/2/7

Sensing with extended gate negative capacitance ferroelectric field-effect transistors

Chip

Honglei Xue

Yue Peng

Qiushi Jing

Jiuren Zhou

Genquan Han

...

2024/3/1

Discover Nano

Marcela Guimarães Landim

Marcella Lemos Brettas Carneiro

Graziella Anselmo Joanitti

Carla Tatiana Mota Anflor

David Dobkowski Marinho

...

2023

Enhanced fatigue resistance of ferroelectric Al0. 65Sc0. 35N deposited by physical vapor deposition

Science China Information Sciences

Yang Li

Danyang Yao

Yan Liu

Zhi Jiang

Ruiqing Wang

...

2024/5

Multiple High‐Q Optical Modes in a Polymer‐Lithium Niobate Integrated Metasurface

Laser & Photonics Reviews

Cizhe Fang

Ruoying Kanyang

Yingke Ji

Yong Zhang

Jiayong Yang

...

2024/2/1

Thermal Transport Properties of β-Ga2O3 Thin Films on Si and SiC Substrates Fabricated by an Ion-Cutting Process

ACS Applied Electronic Materials

Wenhui Xu

Tiancheng Zhao

Lianghui Zhang

Kang Liu

Huarui Sun

...

2024/2/27

Characteristics of β-(AlxGa1− x) 2O3/Ga2O3 dual-metal gate modulation-doped field-effect transistors simulated by TCAD

Journal of Vacuum Science & Technology B

Xiaole Jia

Yibo Wang

Cizhe Fang

Bochang Li

Zhengdong Luo

...

2024/5/1

Energy-Efficient Reconfigurable Transistor Achieving Sub-Nanojoule Consumption per Programming Event

IEEE Electron Device Letters

Siying Zheng

Jiuren Zhou

Yupeng Yao

Faxin Jin

Ning Liu

...

2024/1/3

Complementary negative capacitance field-effect transistors based on vertically stacked van der Waals heterostructures

Applied Physics Letters

Siqing Zhang

Zheng-Dong Luo

Xuetao Gan

Dawei Zhang

Qiyu Yang

...

2024/2/26

Resistance Switching and Carrier Transport Mechanisms of HfO-Based Ferroelectric Diode

IEEE Transactions on Electron Devices

Minglei Ma

Gaobo Lin

Rongzong Shen

Jiacheng Xu

Haoji Qian

...

2024/4/23

HfO2–ZrO2 Ferroelectric Capacitors with Superlattice Structure: Improving Fatigue Stability, Fatigue Recovery, and Switching Speed

ACS Applied Materials & Interfaces

Mingshuang Kang

Yue Peng

Wenwu Xiao

Yueyuan Zhang

Zhe Wang

...

2024/1/3

Room-temperature ferromagnetism and piezoelectricity in metal-free 2D semiconductor crystalline carbon nitride

Nano Research

Yong Wang

Dingyi Yang

Wei Xu

Yongjie Xu

Yu Zhang

...

2024/2/23

Hybrid-Precision Synapse Based-on FDSOI FeFETs With Back-Gate Bias Modulation

IEEE Transactions on Electron Devices

Miaomiao Zhang

Lulu Chou

Hongrui Zhang

Haoji Qian

Chengji Jin

...

2024/4/16

Hybrid mode for absorption enhancement in the Ga2O3 nanocavity photodetector with grating electrodes

JIAYONG YANG

CIZHE FANG

TONGZHOU LI

YIBO WANG

XIAOXI LI

...

2024

Investigation of -GaO MOSFET With Double Drift Layers by TCAD Simulation

IEEE Transactions on Electron Devices

Xiaole Jia

Yibo Wang

Cizhe Fang

Haodong Hu

Yan Liu

...

2023/12/6

Effect of Amorphous Layer at the Heterogeneous Interface on the Device Performance of β-Ga2O3/Si Schottky Barrier Diodes

IEEE Journal of the Electron Devices Society

Zhenyu Qu

Wenhui Xu

Tiangui You

Zhenghao Shen

Tiancheng Zhao

...

2023/2/7

A Comprehensive Simulation Study on Capacitive Memory With Metal-Ferroelectric-Insulator-Semiconductor Structure

Hongrui Zhang

Chengji Jin

Xiaole Jia

Jiajia Chen

Huan Liu

...

2023/3/7

See List of Professors in Genquan Han University(Xidian University)