Emmanouil Kioupakis

Emmanouil Kioupakis

University of Michigan

H-index: 42

North America-United States

About Emmanouil Kioupakis

Emmanouil Kioupakis, With an exceptional h-index of 42 and a recent h-index of 36 (since 2020), a distinguished researcher at University of Michigan, specializes in the field of Condensed Matter Physics, Materials Science, Electronic Structure, Semiconductors, First-principles.

His recent articles reflect a diverse array of research interests and contributions to the field:

Electron mobility of SnO2 from first principles

Electron–phonon physics from first principles using the EPW code

Strain effects on Auger–Meitner recombination in silicon

Perspectives and recent advances of two-dimensional III-nitrides: Material synthesis and emerging device applications

Phonon-assisted Auger-Meitner recombination in silicon from first principles

Carrier density dependent Auger recombination in c-plane (In, Ga) N/GaN quantum wells: insights from atomistic calculations

Ab initio calculation of carrier mobility in semiconductors including ionized-impurity scattering

Erratum: Atomistic analysis of Auger recombination in -plane quantum wells: Temperature-dependent competition between radiative and nonradiative …

Emmanouil Kioupakis Information

University

Position

Associate Professor and Karl F. and Patricia J. Betz Family Scholar

Citations(all)

6138

Citations(since 2020)

3976

Cited By

3639

hIndex(all)

42

hIndex(since 2020)

36

i10Index(all)

85

i10Index(since 2020)

84

Email

University Profile Page

University of Michigan

Google Scholar

View Google Scholar Profile

Emmanouil Kioupakis Skills & Research Interests

Condensed Matter Physics

Materials Science

Electronic Structure

Semiconductors

First-principles

Top articles of Emmanouil Kioupakis

Title

Journal

Author(s)

Publication Date

Electron mobility of SnO2 from first principles

arXiv preprint arXiv:2401.12158

Amanda Wang

Kyle Bushick

Nick Pant

Woncheol Lee

Xiao Zhang

...

2024/1/22

Electron–phonon physics from first principles using the EPW code

npj Computational Materials

Hyungjun Lee

Samuel Poncé

Kyle Bushick

Samad Hajinazar

Jon Lafuente-Bartolome

...

2023/8/25

Strain effects on Auger–Meitner recombination in silicon

Applied Physics Letters

Kyle Bushick

Emmanouil Kioupakis

2023/12/25

Perspectives and recent advances of two-dimensional III-nitrides: Material synthesis and emerging device applications

Yuanpeng Wu

Ping Wang

Woncheol Lee

Anthony Aiello

Parag Deotare

...

2023/4/17

Phonon-assisted Auger-Meitner recombination in silicon from first principles

Physical Review Letters

Kyle Bushick

Emmanouil Kioupakis

2023/8/15

Carrier density dependent Auger recombination in c-plane (In, Ga) N/GaN quantum wells: insights from atomistic calculations

Journal of Physics D: Applied Physics

Joshua M McMahon

Emmanouil Kioupakis

Stefan Schulz

2023/12/22

Ab initio calculation of carrier mobility in semiconductors including ionized-impurity scattering

Physical Review B

Joshua Leveillee

Xiao Zhang

Emmanouil Kioupakis

Feliciano Giustino

2023/3/29

Erratum: Atomistic analysis of Auger recombination in -plane quantum wells: Temperature-dependent competition between radiative and nonradiative …

Physical Review B

Joshua M McMahon

Emmanouil Kioupakis

Stefan Schulz

2023/7/7

Electric-Field-Induced Domain Walls in Wurtzite Ferroelectrics

arXiv preprint arXiv:2312.08645

Ding Wang

Danhao Wang

Mahlet Molla

Yujie Liu

Samuel Yang

...

2023/12/14

Spin–orbit effects on the electronic and optical properties of lead iodide

Applied Physics Letters

Woncheol Lee

Zhengyang Lyu

Zidong Li

Parag B Deotare

Emmanouil Kioupakis

2023/5/22

III-Nitride optoexcitonics: Physics, epitaxy, and emerging device applications

Yuanpeng Wu

Woncheol Lee

Emmanouil Kioupakis

Zetian Mi

2023/10/5

Carrier dynamics in blue, cyan, and green InGaN/GaN LEDs measured by small-signal electroluminescence

Applied Physics Letters

Xuefeng Li

Nick Pant

Elizabeth DeJong

Abdelrahman Tarief Elshafiey

Rob Armitage

...

2023/5/22

Electronic and optical properties of 4H Si from first principles

arXiv preprint arXiv:2309.16501

Xiao Zhang

Emmanouil Kioupakis

2023/9/28

Increased light-emission efficiency in disordered through the correlated reduction of recombination rates

Physical Review Applied

Nick Pant

Emmanouil Kioupakis

2023/12/29

Epitaxial hexagonal boron nitride with high quantum efficiency

APL Materials

David Arto Laleyan

Woncheol Lee

Ying Zhao

Yuanpeng Wu

Ping Wang

...

2023/5/1

Atomistic analysis of Auger recombination in -plane (In,Ga)N/GaN quantum wells: Temperature-dependent competition between radiative and nonradiative …

Physical Review B

Joshua M McMahon

Emmanouil Kioupakis

Stefan Schulz

2022/5/12

Carrier dynamics of polar, semipolar, and nonpolar InGaN/GaN LEDs measured by small-signal electroluminescence

Daniel Feezell

Arman Rashidi

Mohsen Nami

Nick Pant

Morteza Monavarian

...

2022/10/13

Scalable synthesis of monolayer hexagonal boron nitride on graphene with giant bandgap renormalization

Advanced materials

Ping Wang

Woncheol Lee

Joseph P Corbett

William H Koll

Nguyen M Vu

...

2022/5

Nanophotonic control of thermal emission under extreme temperatures in air

Nature Nanotechnology

Sean McSherry

Matthew Webb

Jonathan Kaufman

Zihao Deng

Ali Davoodabadi

...

2022/10

Effects of local compositional and structural disorder on vacancy formation in entropy-stabilized oxides from first-principles

npj Computational Materials

Sieun Chae

Logan Williams

Jihang Lee

John T Heron

Emmanouil Kioupakis

2022/4/29

See List of Professors in Emmanouil Kioupakis University(University of Michigan)

Co-Authors

H-index: 170
Steven G. Louie

Steven G. Louie

University of California, Berkeley

H-index: 130
Chris G. Van de Walle

Chris G. Van de Walle

University of California, Santa Barbara

H-index: 90
Wei D. Lu

Wei D. Lu

University of Michigan

H-index: 73
Kai Sun

Kai Sun

University of Michigan

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