Dr. Vipin S Joshi
Symbiosis International University
H-index: 12
Asia-India
Top articles of Dr. Vipin S Joshi
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
Signatures of positive gate over-drive induced hole trap generation and its impact on p-GaN gate stack instability in AlGaN/GaN HEMTs | Rasik Rashid Malik Vipin Joshi Rajarshi Roy Chaudhuri Mehak Ashraf Mir Zubear Khan | 2023/3/26 | |
Understanding Temperature Dependence of ESD Reliability in AlGaN/GaN HEMTs | Mohammad Ateeb Munshi Mehak Ashraf Mir Rasik Malik Vipin Joshi Rajarshi Roy Chaudhuri | 2023/10/2 | |
Unique Dependence of the Breakdown Behavior of Normally-OFF Cascode AlGaN/GaN HEMTs on Carrier Transport Through the Carbon-Doped GaN Buffer | Vipin Joshi Sayak Dutta Gupta Rajarshi Roy Chaudhuri Mayank Shrivastava | 2023/3/26 | |
Interplay of Surface Passivation and Electric Field in Determining ESD Behaviour of p-GaN Gated AlGaN/GaN HEMTs | Rasik Rashid Malik Avinas N Shaji Zubear Khan Madhura Bhattacharya Mohammad Ateeb Munshi | 2023/10/2 | |
Physical Insights Into the Lattice Temperature Dependent Evolution of Hot Electron Distribution in GaN HEMTs on C-Doped GaN-on-Si | IEEE Transactions on Electron Devices | Rajarshi Roy Chaudhuri Vipin Joshi Rasik Rashid Malik Mayank Shrivastava | 2023/10/31 |
Unique lattice temperature dependent evolution of hot electron distribution in GaN HEMTs on C-doped GaN buffer and its reliability consequences | Rajarshi Roy Chaudhuri Vipin Joshi Amratansh Gupta Tanmay Joshi Rasik Rashid Malik | 2023/3/26 | |
Impact of Channel Electric Field Profile Evolution on Nanosecond Timescale Cyclic Stress-Induced Dynamic RON Behavior in AlGaN/GaN HEMTs—Part II | IEEE Transactions on Electron Devices | Rajarshi Roy Chaudhuri Amratansh Gupta Vipin Joshi Rasik Rashid Malik Sayak Dutta Gupta | 2023/8/11 |
Physical Insights Into Nano-Second Time Scale Cyclic Stress Induced Dynamic Behavior in AlGaN/GaN HEMTs—Part I | IEEE Transactions on Electron Devices | Rajarshi Roy Chaudhuri Amratansh Gupta Vipin Joshi Rasik Rashid Malik Sayak Dutta Gupta | 2023/10/17 |
Physical insights into electron trapping mechanism in the carbon-doped GaN buffer in AlGaN/GaN HEMTs and its impact on dynamic on-resistance | IEEE Transactions on Electron Devices | Vipin Joshi Rajarshi Roy Chaudhuri Sayak Dutta Gupta Mayank Shrivastava | 2023/5/8 |
Reverse Bias Stress-Induced Turn-On Voltage Shift in Recessed AlGaN/GaN Schottky Barrier Diodes | IEEE Transactions on Electron Devices | Rasik Rashid Malik Vipin Joshi Rajarshi Roy Chaudhuri Sayak Dutta Gupta Mayank Shrivastava | 2023/10/12 |
Physical Insights into the DC and Transient Reverse Bias Reliability of β-Ga2O3 Based Vertical Schottky Barrier Diodes | Harsh Raj Vipin Joshi Rajarshi Roy Chaudhuri Rasik Rashid Malik Mayank Shrivastava | 2023/3/26 | |
Impact of Buffer Capacitance-Induced Trap Charging on Electric Field Distribution and Breakdown Voltage of AlGaN/GaN HEMTs on Carbon-Doped GaN-on-Si | IEEE Transactions on Electron Devices | Vipin Joshi Rajarshi Roy Chaudhuri Sayak Dutta Gupta Mayank Shrivastava | 2023/10/9 |
Interplay of device design and carbon-doped GaN buffer parameters in determining dynamic in AlGaN/GaN HEMTs | IEEE Transactions on Electron Devices | Vipin Joshi Sayak Dutta Gupta Rajarshi Roy Chaudhuri Mayank Shrivastava | 2022/10/13 |
Unique gate bias dependence of dynamic on-resistance in MIS-gated AlGaN/GaN HEMTs and its dependence on gate control over the 2-DEG | IEEE Transactions on Electron Devices | Sayak Dutta Gupta Vipin Joshi Rajarshi Roy Chaudhuri Mayank Shrivastava | 2022/1/31 |
Observations and physical insights into time-dependent hot electron current confinement in AlGaN/GaN HEMTs on C-doped GaN buffer | IEEE Transactions on Electron Devices | Rajarshi Roy Chaudhuri Vipin Joshi Sayak Dutta Gupta Mayank Shrivastava | 2022/10/20 |
Unique Role of Hot-Electron Induced Self-Heating in Determining Gate-Stack Dependent Dynamic RON of AlGaN/GaN HEMTs Under Semi-on State | IEEE Transactions on Electron Devices | Sayak Dutta Gupta Vipin Joshi Rajarshi Roy Chaudhuri Mayank Shrivastava | 2022/10/19 |
Doping and trap profile engineering in GaN buffer to maximize AlGaN/GaN HEMT EPI stack breakdown voltage | 2021/6/8 | ||
Novel surface passivation scheme by using p-type AlTiO to mitigate dynamic ON resistance behavior in AlGaN/GaN HEMTs—Part II | IEEE Transactions on Electron Devices | Sayak Dutta Gupta Vipin Joshi Rajarshi Roy Chaudhuri Mayank Shrivastava | 2021/3/19 |
Part I: Physical Insights Into Dynamic RON Behavior and a Unique Time-Dependent Critical Stress Voltage in AlGaN/GaN HEMTs | IEEE Transactions on Electron Devices | Sayak Dutta Gupta Vipin Joshi Rajarshi Roy Chaudhuri Mayank Shrivastava | 2021/9/14 |
On the channel hot-electron’s interaction with C-doped GaN buffer and resultant gate degradation in AlGaN/GaN HEMTs | IEEE Transactions on Electron Devices | Rajarshi Roy Chaudhuri Vipin Joshi Sayak Dutta Gupta Mayank Shrivastava | 2021/8/12 |
