Daniel G. Georgiev
University of Toledo
H-index: 32
North America-United States
Top articles of Daniel G. Georgiev
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
Hybrid Edge Termination for High-Voltage Vertical GaN Devices: Empirical Validation and Robust Processing Tolerance | IEEE Transactions on Electron Devices | Prakash Pandey Tolen M Nelson Michael R Hontz Daniel G Georgiev Raghav Khanna | 2024/4/8 |
Experimental Validation of Robust Hybrid Edge Termination Structures in Vertical GaN pin Diodes with Avalanche Capability | IEEE Electron Device Letters | James Spencer Lundh Alan G Jacobs Prakash Pandey Tolen Nelson Daniel G Georgiev | 2024/3/13 |
Percolation Nature of Threshold Switching: an Experimental Verification | Suman Devkota Brendan M Kuzior Victor G Karpov Daniel G Georgiev Frank Li | 2023/7/2 | |
Design, Packaging, and Empirical Characterization of 1 kV Vertical GaN PN Diode | Sadab Mahmud Prakash Pandey Samuel K Atwimah Tolen Nelson Daniel G Georgiev | 2023/3/19 | |
Multi-Layer Hybrid Edge Termination for III-N Power Devices | 2023/2/2 | ||
Scaled Projections of Empirically Verified Hybrid Edge Terminated Vertical GaN Diodes to 20 kV | Tolen Nelson Prakash Pandey Daniel G Georgiev Raghav Khanna Michael R Hontz | 2023/12/4 | |
Threshold Switching in CdTe Photovoltaics | ECS Transactions | Suman Devkota Kwame Asiedu Owusu Nyako Brendan Kuzior Victor Karpov Daniel G Georgiev | 2022/9/30 |
Reactive sputtering deposition and characterization of Ta-N thin films | MRS Advances | Md Maidul Islam Daniel G Georgiev | 2022/7 |
Stable stoichiometric copper nitride thin films via reactive sputtering | Applied Physics A | Md Maidul Islam Daniel G Georgiev | 2022/7 |
Characterization and modeling of a 1.3 kV vertical GaN diode | Prakash Pandey William Collings Sadab Mahmud Tolen Nelson Michael R Hontz | 2022/3/20 | |
Modification of Tin (Sn) metal surfaces by surface plasmon polariton excitation | Srikanth Itapu Vamsi Borra Victor G Karpov Daniel G Georgiev | 2022/2/1 | |
Examination of trapping effects on single-event transients in GaN HEMTs | IEEE Transactions on Nuclear Science | Tolen Nelson Daniel G Georgiev Michael R Hontz Raghav Khanna Adrian Ildefonso | 2022/11/8 |
Tin Whisker Growth Suppression Using NiO Sublayers Fabricated by Dip Coating | Srikanth Itapu Daniel G Georgiev Jacob D Buchanan Vamsi Borra Maidul Islam | 2022/1/6 | |
Hybrid edge termination in vertical GaN: approximating beveled edge termination via Discrete Implantations | IEEE Transactions on Electron Devices | Tolen Nelson Prakash Pandey Daniel G Georgiev Michael R Hontz Andrew D Koehler | 2022/10/27 |
Sn whisker growth mitigation using NiO sublayers | 2021/4/6 | ||
Substrate integrated waveguide bandpass filtering with Fourier-varying via-hole walling | IEEE Access | Osama I Hussein Khair A Al Shamaileh Nihad I Dib Amir Nosrati Said Abushamleh | 2020/7/31 |
Laser-based fabrication of microstructures on nickel thin films and its applications in on-chip thin film inductors | IEEE Transactions on Nanotechnology | Srikanth Itapu Vamsi Borra Daniel G Georgiev | 2020/6/5 |
Negative differential resistance (NDR) behavior of nickel oxide (NiO) based metal-insulator-semiconductor structures | Journal of Electronic Materials | Kamruzzaman Khan Srikanth Itapu Daniel G Georgiev | 2020/1 |
