Chel-Jong Choi
Chonbuk National University
H-index: 37
Asia-South Korea
Top articles of Chel-Jong Choi
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
Enhancing the performance of surface-textured Ge Schottky photodetectors using the electroless chemical etching method | Materials Science in Semiconductor Processing | Munkhsaikhan Zumuukhorol Sosorburam Boldbaatar Zagarzusem Khurelbaatar Ji-Yoon Baek Kyu-Hwan Shim | 2024/1/1 |
Analysis of Photodiode and Barrier Properties of CoPc/n-Ge Heterojunction under various Illumination Wavelengths | Optik | M Pavani A Ashok Kumar S Kaleemulla V Janardhanam Chel-Jong Choi | 2024/4/16 |
Dysprosium oxide (Dy2O3) layer effect on the interface possessions of Au/n-GaN Schottky diode as an interlayer and its chemical and microstructural features | Materials Science in Semiconductor Processing | D Surya Reddy V Rajagopal Reddy Chel-Jong Choi | 2024/4/1 |
Optical, morphological and electrical properties of rapid thermally annealed CoPc/n-Ge heterostructures for photodiode applications | American Journal of Modern Physics | Zakia Fekkai Nazir Mustapha Ali Hennache | 2014/2 |
Microstructural Evolution of Ni-Stanogermanides and Sn Segregation during Interfacial Reaction between Ni Film and Ge1−xSnx Epilayer Grown on Si Substrate | Crystals | Han-Soo Jang Jong Hee Kim Vallivedu Janardhanam Hyun-Ho Jeong Seong-Jong Kim | 2024/1/28 |
Enhancement of device performance in β-Ga2O3 Schottky barrier diodes with tetramethylammonium hydroxide treatment | Colloids and Surfaces A: Physicochemical and Engineering Aspects | V Janardhanam Jong-Hee Kim I Jyothi Hyun-Ho Jung Seong-Jong Kim | 2024/4/25 |
Chemical states and electrical features of Ti/CaTiO3 (CT)/p-InP MIS-type Schottky diode with a high-k CT interlayer | Materials Science in Semiconductor Processing | S Sai Krupa V Rajagopal Reddy Chel-Jong Choi | 2024/1/1 |
Electrical, Structural and Photovoltaic properties of Acceptor Dye Modified Au/n-Ge heterostructure | Solid State Communications | D Mallikarjuna A Ashok Kumar S Kaleemulla V Rajagopal Reddy M Raghavender | 2024/4/23 |
Self-powered MoS2/n-type GaN heterojunction photodetector with broad spectral response in ultraviolet–visible–near-infrared range | Sensors and Actuators A: Physical | V Janardhanam M Zummukhozol I Jyothi Kyu-Hwan Shim Chel-Jong Choi | 2023/10/1 |
Synthesis of ultra-thin nanobelt-like vanadium-oxide and its abnormal optical-electrical properties | Ceramics International | Hee Jung Park Jeong Min Lee Mohammad Nasir Seung Jo Yoo Chel-Jong Choi | 2023/2/15 |
Highly Sensitive Ultraviolet Photodetector Based on an AlGaN/GaN HEMT with Graphene‐On‐p‐GaN Mesa Structure | Advanced Materials Interfaces | Bhishma Pandit Hyeon‐Sik Jang Yunjo Jeong Sangmin An S Chandramohan | 2023/4 |
Modification of interface properties of Au/n-GaN Schottky junction by rare-earth oxide Nd2O3 as an interlayer and its microstructural characterization | Vacuum | D Surya Reddy V Janardhanam V Rajagopal Reddy Chel-Jong Choi | 2023/9/1 |
Concurrent Thermal Reduction and Boron-Doped Graphene Oxide by Metal–Organic Chemical Vapor Deposition for Ultraviolet Sensing Application | Applied Nano | Beo Deul Ryu Hyeon-Sik Jang Kang Bok Ko Min Han Tran Viet Cuong | 2023/12/28 |
On the current conduction mechanisms of WO3/n-Ge Schottky interfaces | Materials Today: Proceedings | G Henry Thomas A Ashok Kumar V Rajagopal Reddy V Janardhanam Chel-Jong Choi | 2023/2/6 |
Dose-dependency of contact resistance and sheet resistance of B-implanted emitters for N-type crystalline Si solar cells fabricated using screen-printed fire-through Ag/Al … | Journal of the Korean Physical Society | Young-Woo Ok Jong-Hee Kim Vijaykumar D Upadhyaya Ajeet Rohatgi Chang-Hee Hong | 2023/4 |
Temperature-dependent Schottky diode behavior of Ni Schottky contacts to α-Ga2O3 film epitaxially grown on sapphire substrate | Materials Science in Semiconductor Processing | Sosorburam Boldbaatar V Janardhanam Munkhsaikhan Zumuukhorol Hoon-Ki Lee Hae-Yong Lee | 2023/8/15 |
Exploration of microstructural, chemical states and electrical features of the Au/Er2O3/n-GaN MIS diode with a Er2O3 interlayer | Materials Science and Engineering: B | D Surya Reddy V Rajagopal Reddy Chel-Jong Choi | 2023/12/1 |
Single process of pulsed wire discharge for defect healing and reduction of graphene oxide | Carbon | Wonki Lee Jungtae Nam Jaejun Park Geonhee Lee Seok hoon Ahn | 2023/1/5 |
Broadband photodetector based on MoS2/Ge heterojunction for optoelectronic applications | Vacuum | M Zumuukhorol Z Khurelbaatar Dong-Ho Kim Kyu-Hwan Shim V Janardhanam | 2023/3/1 |
Controlled Electronic and Magnetic Landscape in Self‐Assembled Complex Oxide Heterostructures | Advanced Materials | Dae‐Sung Park Aurora Diana Rata Rasmus Tindal Dahm Kanghyun Chu Yulin Gan | 2023/8 |
