Carl H. Naylor
University of Pennsylvania
H-index: 31
North America-United States
Top articles of Carl H. Naylor
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
Contact architecture for 2d stacked nanoribbon transistor | 2024/1/4 | ||
Back-end-of-line 2d memory cell | 2024/1/4 | ||
Back-end-of-line 2d transistor | 2024/1/4 | ||
TMD inverted nanowire integration | 2024/3/19 | ||
Charge-transfer spacers for stacked nanoribbon 2D transistors | 2024/2/20 | ||
Alternating sacrificial layer materials for mechanically stable 2d nanoribbon etch | 2024/1/4 | ||
Transistor structure with a monolayer edge contact | 2023/3/30 | ||
Interconnect line structures with metal chalcogenide cap materials | 2023/6/22 | ||
Integrated circuits and methods for forming integrated circuits | 2023/11/28 | ||
Stacked single crystal transition-metal dichalcogenide using seeded growth | 2023/12/28 | ||
Thin film transistors having edge-modulated 2d channel material | 2023/3/23 | ||
Heterostructure material contacts for 2d transistors | 2023/3/30 | ||
Thin film transistors having a spin-on 2d channel material | 2023/3/30 | ||
2D materials in the BEOL | CH Naylor K Maxey C Jezewski KP O’Brien AV Penumatcha | 2023/6/11 | |
Process integration and future outlook of 2D transistors | nature communications | Kevin P O’Brien Carl H Naylor Chelsey Dorow Kirby Maxey Ashish Verma Penumatcha | 2023/10/12 |
2d layered gate oxide | 2023/12/28 | ||
Thin film transistors having strain-inducing structures integrated with 2d channel materials | 2023/3/23 | ||
Stacked 2d cmos with inter metal layers | 2023/3/30 | ||
Integrated circuit structures with graphene contacts | 2023/3/30 | ||
Selectable vias for back end of line interconnects | 2023/6/6 |
