C. Claeys

C. Claeys

Katholieke Universiteit Leuven

H-index: 45

Europe-Belgium

About C. Claeys

C. Claeys, With an exceptional h-index of 45 and a recent h-index of 22 (since 2020), a distinguished researcher at Katholieke Universiteit Leuven, specializes in the field of Semiconductor technology, radiation effects, noise studies, device physics, material science.

His recent articles reflect a diverse array of research interests and contributions to the field:

3D backside integration of FinFETs: Is there an impact on LF noise?

(Keynote) Technological Challenges and Emerging Device Architectures for Future Semiconductor Micro and Nanoelectronics

The European Flagship Conferences ESSDERC and ESSCIRC Merge to Become ESSERC [Conference Reports]

RTS Noise Characterization of Trap Properties in InGaAs nFinFETs

Impact of the channel doping on the low-frequency noise of gate-all-around silicon vertical nanowire pMOSFETs

(Electronics and Photonics Division Award) The Impact of Defects on the Performance of Semiconductor Devices and Materials

The Low-Frequency Noise Behavior of Advanced Logic and Memory Devices

Tunnel-FET evolution and applications for analog circuits

C. Claeys Information

University

Position

Professor

Citations(all)

13268

Citations(since 2020)

2795

Cited By

14699

hIndex(all)

45

hIndex(since 2020)

22

i10Index(all)

290

i10Index(since 2020)

60

Email

University Profile Page

Katholieke Universiteit Leuven

Google Scholar

View Google Scholar Profile

C. Claeys Skills & Research Interests

Semiconductor technology

radiation effects

noise studies

device physics

material science

Top articles of C. Claeys

Title

Journal

Author(s)

Publication Date

3D backside integration of FinFETs: Is there an impact on LF noise?

Solid-State Electronics

Eddy Simoen

Anne Jourdain

Cor Claeys

Anabela Veloso

2023/9/1

(Keynote) Technological Challenges and Emerging Device Architectures for Future Semiconductor Micro and Nanoelectronics

Electrochemical Society Meeting Abstracts 243

Cor Claeys

Eddy Simoen

2023/8/28

The European Flagship Conferences ESSDERC and ESSCIRC Merge to Become ESSERC [Conference Reports]

IEEE Solid-State Circuits Magazine

Joachim N Burghartz

Michiel Steyaert

Cor Claeys

Piero Malcovati

2023/8/18

RTS Noise Characterization of Trap Properties in InGaAs nFinFETs

IEEE Transactions on Electron Devices

Xiaolei Xiao

Liang He

Hua Chen

Xianyu Wang

Eddy Simoen

...

2023/6/5

Impact of the channel doping on the low-frequency noise of gate-all-around silicon vertical nanowire pMOSFETs

Solid-State Electronics

Eddy Simoen

Anabela Veloso

Philippe Matagne

Cor Claeys

2022/8/1

(Electronics and Photonics Division Award) The Impact of Defects on the Performance of Semiconductor Devices and Materials

Electrochemical Society Meeting Abstracts 241

Eddy Simoen

K Takakura

Brent Hsu

Cor Claeys

2022/7/7

The Low-Frequency Noise Behavior of Advanced Logic and Memory Devices

Eddy Simoen

Romain Ritzenthaler

Hans Mertens

Eugenio Dentoni Litta

Naoto Horiguchi

...

2022/6/20

Tunnel-FET evolution and applications for analog circuits

Journal of Integrated Circuits and Systems

Paula Ghedini Der Agopian

Joao A Martino

Eddy Simoen

Rita Rooyackers

Cor Claeys

2022

Frontiers in low-frequency noise research in advanced semiconductor devices

Eddy Simoen

Anabela Veloso

Barry O'Sullivan

Kenichiro Takakura

Cor Claeys

2021/3/14

Impact of processing factors on the low-frequency noise of gate-all-around silicon vertical nanowire FETs

ECS Transactions

Eddy Simoen

Anabela Veloso

Philippe Matagne

Cor Claeys

2021/10/1

HVEM studies of nitride film edge induced defect generation in silicon substrates

J Vanhellemont

Corneel Claeys

J Van Landuyt

2021/1/31

Low frequency noise performance of horizontal, stacked and vertical silicon nanowire MOSFETs

Solid-State Electronics

Eddy Simoen

Alberto Vinicius de Oliveira

Paula Ghedini Der Agopian

Romain Ritzenthaler

Hans Mertens

...

2021/10/1

Interfacial Properties of nMOSFETs With Different Al2O3 Capping Layer Thickness and TiN Gate Stacks

IEEE Transactions on Electron Devices

Danghui Wang

Tianhan Xu

Eddy Simoen

Bogdan Govoreanu

Cor Claeys

...

2021/1/15

Detailed low frequency noise assessment on GAA NW n-channel FETs

Solid-State Electronics

B Cretu

A Bordin

E Simoen

G Hellings

D Linten

...

2021/8/1

Defects in crystalline silicon

Advanced and Selniconducting Silicon~ Alloy Based Material and Devices, JFA-Nijs, Ed.(Inst. of Phys. Pub., Bristol, 1994) pp

Cor Claeys

Jan Vanhellemont

2021/5/30

Impact of gate current on the operational transconductance amplifier designed with nanowire TFETs

Solid-State Electronics

Alexandro de M Nogueira

Paula GD Agopian

Eddy Simoen

Rita Rooyackers

Cor Claeys

...

2021/12/1

Defect Engineering for Monolithic Integration of III-V Semiconductors on Silicon Substrates

ECS Transactions

Cor Claeys

Eddy Simoen

2021/5/7

Temperature-Dependent Electrical Properties of nMOSFETs With Different Thickness Al₂O₃ Capping Layer and TiN Gate

IEEE Transactions on Electron Devices

Danghui Wang

Junna Zheng

Yang Zhang

Tianhan Xu

Eddy Simoen

...

2021/10/19

Electrical Activity of Extended Defects in Relaxed InxGa1− xAs Hetero-Epitaxial Layers

ECS Journal of Solid State Science and Technology

Cor Claeys

P-C Hsu

Yves Mols

H Han

Hugo Bender

...

2020/2/19

Using the hexagonal layout style for Mosfets to boost the device matching in ionizing radiation environments

Journal of Integrated Circuits and Systems

Vinicius Vono Peruzzi

William Cruz

Gabriel Augusto da Silva

Eddy Simoen

Cor Claeys

...

2020/8/10

See List of Professors in C. Claeys University(Katholieke Universiteit Leuven)