Byung Jin Cho
KAIST
H-index: 56
Asia-South Korea
Top articles of Byung Jin Cho
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
Optimization of Ion Beam-Assisted Deposition Process for Y2O3 Film to Enhance Plasma Resistance | Korean Journal of Metals and Materials | Choluk Oh Ojun Kwon Younghun Bae Hyejin Shin Young Min Kwon | 2024/5/5 |
Impact of oxygen deficiency and shallow hole-traps on high-responsivity ZnO-based UV photodetectors | Sensors and Actuators A: Physical | Minje Kim Jongsu Beak Sunjae Kim Wan Sik Hwang Byung Jin Cho | 2024/2/9 |
Designing buried-gate InGaZnO transistors for high-yield and reliable switching characteristics | Journal of Materials Chemistry C | Seyoung Oh Ojun Kwon Soo-Hong Jeong Hyun Young Seo Eunjeong Cho | 2024 |
Sn-doped n-type amorphous gallium oxide semiconductor with energy bandgap of 4.9 eV | Materials Science in Semiconductor Processing | Dahee Seo Jongsu Baek Sunjae Kim Byung Jin Cho Wan Sik Hwang | 2024/1/1 |
Wafer-scale growth of amorphous boron nitride thin film | Hyeongjoon Kim Kiryong Kim Sun-Woo Lee Min Yung Lee Gyusoup Lee | 2023 | |
Dual-Mechanism Memory Combining Charge Trapping and Polarization Switching for Wide Memory Window Flash Cell | IEEE Electron Device Letters | Eui Joong Shin Gyusoup Lee Seongho Kim Jun Hong Chu Byung Jin Cho | 2023/6/5 |
Increased Mobility and Reduced Hysteresis of MoS2 Field-Effect Transistors via Direct Surface Precipitation of CsPbBr3-Nanoclusters for Charge Transfer Doping | Nano Letters | Yae Zy Kang Gwang Hwi An Min-Gi Jeon So Jeong Shin Su Jin Kim | 2023/9/18 |
Application of Pulsed Green Laser Activation to Top-Tier MOSFET Fabrication for Monolithic 3-D Integration | IEEE Transactions on Electron Devices | Youngkeun Park Jaejoong Jeong Semin Noh Heetae Kim Seongho Kim | 2023/12/8 |
A non-invasive approach to the resistive switching physical model of ultra-thin organic–inorganic dielectric-based ReRAMs | Nanoscale | Alba Martinez Byung Jin Cho Min Ju Kim | 2023 |
Comprehensive study on trap-induced bias instability via high-pressure D2 and N2 annealing | IEEE Transactions on Device and Materials Reliability | Ja-Yun Ku Khwang-Sun Lee Dae-Han Jung Dong-Hyun Wang Seyoung Oh | 2023/4/27 |
Memory semiconductor devices comprising an anti-ferroelectric material | 2023/8/29 | ||
Physical Reservoir based on a Leaky-FeFET Using the Temporal Memory Effect | IEEE Electron Device Letters | Gyusoup Lee Changyeon Kang Seongho Kim Youngkeun Park Eui Joong Shin | 2023/11/28 |
Corrigendum to "MoS2/p-Si heterojunction with graphene interfacial layer for high performance 940 nm infrared photodetector" [Appl. Surf. Sci. 604 (2022) 154485] | Applied Surface Science | Wondeok Seo Woojin Park Hyun Young Seo Seyoung Oh Ojun Kwon | 2023/1 |
Ultralow-k Amorphous Boron Nitride Film for Copper Interconnect Capping Layer | IEEE Transactions on Electron Devices | Kiryong Kim Hyeongjoon Kim Sun-Woo Lee Min Yung Lee Gyusoup Lee | 2023/3/23 |
Reinforcing Synaptic Plasticity of Defect-Tolerant States in Alloyed 2D Artificial Transistors | ACS Applied Materials & Interfaces | Jina Bak Seunggyu Kim Kyumin Park Jeechan Yoon Mino Yang | 2023/8/10 |
Heterogeneous 3-D Sequential CFETs With Ge (110) Nanosheet p-FETs on Si (100) Bulk n-FETs | IEEE Transactions on Electron Devices | Seong Kwang Kim Hyeong-Rak Lim Jaejoong Jeong Seung Woo Lee Ho Jin Jeong | 2023/11/21 |
Three-dimensional semiconductor memory device, method of fabricating the same, and electronic system including the same | 2023/3/9 | ||
Conduction Mechanism in Acceptor- or Donor-Doped ZrO2 Bulk and Thin Films | ACS Applied Materials & Interfaces | Minseok Kim Seyoung Oh Byungjin Cho Jong Hoon Joo | 2023/6/22 |
The Effect of Alkyl Chain Length in Organic Semiconductor and Surface Polarity of Polymer Dielectrics in Organic Thin‐Film Transistors (OTFTs)(Small Methods 11/2023) | Small Methods | Junhwan Choi Min Ju Kim Joo‐Young Kim Eun Kyung Lee Changhyeon Lee | 2023/11 |
Reliable synaptic plasticity of InGaZnO transistor with TiO2 interlayer | Nanotechnology | Soo-Hong Jeong Seyoung Oh Ojun Kwon Hyun Young Seo Woojin Park | 2023/12/29 |
Co-Authors
