Byung Ha Kang
Yonsei University
H-index: 14
Asia-South Korea
Top articles of Byung Ha Kang
Facile Polydimethylsiloxane Treatment of Indium Gallium Zinc Oxide Phototransistor for Visible Light‐Based Multilevel Photomemory
Advanced Optical Materials
2022/7
9‐3: Student Paper: Widening the Wavelength Absorption Range of Indium Gallium Zinc Oxide Phototransistors through the Capping layer
SID Symposium Digest of Technical Papers
2022/6
Kyungho Park
H-Index: 19
Hyukjoon Yoo
H-Index: 4
Sujin Jung
H-Index: 2
Byung Ha Kang
H-Index: 6
Hyun Jae Kim
H-Index: 35
Skin-conformable photoplethysmogram sensors for energy-efficient always-on cardiovascular monitoring systems
Nano Energy
2022/2/1
Widening the Wavelength Absorption Range of Indium Gallium Zinc Oxide Phototransistors through the Capping layer
Digest of Technical Papers-SID International Symposium
2022
Kyungho Park
H-Index: 19
Hyukjoon Yoo
H-Index: 4
Sujin Jung
H-Index: 2
Byung Ha Kang
H-Index: 6
Hyun Jae Kim
H-Index: 35
Highly sensitive active pixel image sensor array driven by large-area bilayer MoS2 transistor circuitry
Nature communications
2021/6/11
Recent Progress in Oxide Semiconductor Based Thin-Film Transistors for Next-Generation Display
Material Matters
2021/4
Byung Ha Kang
H-Index: 6
A Review of Phototransistors Using Metal Oxide Semiconductors: Research Progress and Future Directions (Adv. Mater. 47/2021)
Advanced Materials
2021/5
Neuromorphic active pixel image sensor array for visual memory
ACS nano
2021/8/31
Flexible artificial synapses with a biocompatible maltose–ascorbic acid electrolyte gate for neuromorphic computing
ACS Applied Materials & Interfaces
2021/7/19
Indium oxide nanomesh-based electrolyte-gated synaptic transistors
Journal of Information Display
2021/3/19
Improving the performances of oxide phototransistors using a mechanochemically treated porous visible-light absorption layer
Journal of Information Display
2020/10/1
Simultaneously defined semiconducting channel layer using electrohydrodynamic jet printing of a passivation layer for oxide thin-film transistors
ACS Applied Materials & Interfaces
2020/8/5
Byung Ha Kang
H-Index: 6
P‐7: Improvement of Electrical Stability of In‐Ga‐Zn‐O Thin‐film Transistors by Incorporation of Polytetrafluoroethylene in the Back Channel Region
SID Symposium Digest of Technical Papers
2020/8
A review of low‐temperature solution‐processed metal oxide thin‐film transistors for flexible electronics
2020/5
Byung Ha Kang
H-Index: 6
Hyun Jae Kim
H-Index: 35
High photosensitive indium–gallium–zinc oxide thin-film phototransistor with a selenium capping layer for visible-light detection
ACS applied materials & interfaces
2020/2/13
Improvement of electrical stability of In-Ga-Zn-O thin-film transistors by incorporation of polytetrafluoroethylene in the back channel region
Digest of Technical Papers-SID International Symposium
2020
Improvement of the stability and optoelectronic characteristics of molybdenum disulfide thin-film transistors by applying a nitrocellulose passivation layer
Journal of Information Display
2020/4/2
Fabrication of indium gallium zinc oxide phototransistors via oxide-mesh insertion for visible light detection
Journal of Materials Chemistry C
2020
Mechanochemical and thermal treatment for surface functionalization to reduce the activation temperature of In-Ga-Zn-O thin-film transistors
ACS applied materials & interfaces
2020/3/31
Co-Authors
