Burcu Ercan

Burcu Ercan

University of California, Davis

H-index: 17

North America-United States

About Burcu Ercan

Burcu Ercan, With an exceptional h-index of 17 and a recent h-index of 12 (since 2020), a distinguished researcher at University of California, Davis, specializes in the field of TCAD Simulation, GaN devices, Semiconductor Devices, Optical Communication Devices, Femtosecond Laser Inscription.

His recent articles reflect a diverse array of research interests and contributions to the field:

A study on the impact of dislocation density on leakage current in vertical GaN-on-GaN pn diodes

Demonstration of monolithic polycrystalline diamond-GaN complementary FET technology for high-temperature applications

Oxidation behavior of InAlN during rapid thermal annealing

Demonstration of GaN impact ionization avalanche transit-time (IMPATT) diode

60 A/W high voltage GaN avalanche photodiode demonstrating robust avalanche and high gain up to 525 K

Robust avalanche in GaN leading to record performance in avalanche photodiode

Design, Fabrication and Characterization of GaN-Based Devices for Power Applications

Burcu Ercan Information

University

Position

___

Citations(all)

1425

Citations(since 2020)

667

Cited By

1008

hIndex(all)

17

hIndex(since 2020)

12

i10Index(all)

19

i10Index(since 2020)

12

Email

University Profile Page

University of California, Davis

Google Scholar

View Google Scholar Profile

Burcu Ercan Skills & Research Interests

TCAD Simulation

GaN devices

Semiconductor Devices

Optical Communication Devices

Femtosecond Laser Inscription

Top articles of Burcu Ercan

Title

Journal

Author(s)

Publication Date

A study on the impact of dislocation density on leakage current in vertical GaN-on-GaN pn diodes

IEEE Transactions on Electron Devices

Siwei Li

Burcu Ercan

Chenhao Ren

Hirotaka Ikeda

Srabanti Chowdhury

2022/7/11

Demonstration of monolithic polycrystalline diamond-GaN complementary FET technology for high-temperature applications

ACS Applied Electronic Materials

Chenhao Ren

Mohamadali Malakoutian

Siwei Li

Burcu Ercan

Srabanti Chowdhury

2021/10/7

Oxidation behavior of InAlN during rapid thermal annealing

physica status solidi (a)

Andrew M Thron

Jianyi Gao

Burcu Ercan

Matthew A Laurent

Srabanti Chowdhury

...

2021/10

Demonstration of GaN impact ionization avalanche transit-time (IMPATT) diode

Dong Ji

Burcu Ercan

Jia Zhuang

Lei Gu

Juan Rivas-Davila

...

2020/6/21

60 A/W high voltage GaN avalanche photodiode demonstrating robust avalanche and high gain up to 525 K

Applied Physics Letters

Dong Ji

Burcu Ercan

Garrett Benson

AKM Newaz

Srabanti Chowdhury

2020/5/26

Robust avalanche in GaN leading to record performance in avalanche photodiode

Dong Ji

Burcu Ercan

Garret Benson

AKM Newaz

Srabanti Chowdhury

2020/4/28

Design, Fabrication and Characterization of GaN-Based Devices for Power Applications

Burcu Ercan

2020

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