Bo Soo Kang

Bo Soo Kang

Hanyang University

H-index: 35

Asia-South Korea

About Bo Soo Kang

Bo Soo Kang, With an exceptional h-index of 35 and a recent h-index of 13 (since 2020), a distinguished researcher at Hanyang University, specializes in the field of Oxide electronics, Material Physics, Device Physics.

His recent articles reflect a diverse array of research interests and contributions to the field:

Highly reliable bipolar resistive switching of tantalum oxide-based memory using Al2O3 diffusion barrier layers

Optimization Method for Conductance Modulation in Ferroelectric Transistor for Neuromorphic Computing

Mechanism of the Wake-Up and the Split-Up in AlOx/Hf0.5Zr0.5Ox Film

Polarization switching dynamics simulation by using the practical distribution of ferroelectric properties

Progressive and stable synaptic plasticity with femtojoule energy consumption by the interface engineering of a metal/ferroelectric/semiconductor

Effect of annealing temperature on switching properties in Si-doped HfO2 films

Effect of wake-up on the polarization switching dynamics of Si doped HfO2 thin films with imprint

Highly stable, solution-processed quaternary oxide thin film-based resistive switching random access memory devices via global and local stoichiometric manipulation strategy

Bo Soo Kang Information

University

Position

___

Citations(all)

7231

Citations(since 2020)

1182

Cited By

6616

hIndex(all)

35

hIndex(since 2020)

13

i10Index(all)

64

i10Index(since 2020)

21

Email

University Profile Page

Hanyang University

Google Scholar

View Google Scholar Profile

Bo Soo Kang Skills & Research Interests

Oxide electronics

Material Physics

Device Physics

Top articles of Bo Soo Kang

Title

Journal

Author(s)

Publication Date

Highly reliable bipolar resistive switching of tantalum oxide-based memory using Al2O3 diffusion barrier layers

Current Applied Physics

Seung Ryul Lee

Bo Soo Kang

2024/2/23

Optimization Method for Conductance Modulation in Ferroelectric Transistor for Neuromorphic Computing

Advanced Electronic Materials

Cheol Jun Kim

Jae Yeob Lee

Minkyung Ku

Tae Hoon Kim

Taehee Noh

...

2023/12/27

Mechanism of the Wake-Up and the Split-Up in AlOx/Hf0.5Zr0.5Ox Film

Nanomaterials

Min-Jin Kim

Cheol-Jun Kim

Bo-Soo Kang

2023/7/24

Polarization switching dynamics simulation by using the practical distribution of ferroelectric properties

Applied Physics Letters

Cheol Jun Kim

Jae Yeob Lee

Minkyung Ku

Seung Won Lee

Ji-Hoon Ahn

...

2023/1/2

Progressive and stable synaptic plasticity with femtojoule energy consumption by the interface engineering of a metal/ferroelectric/semiconductor

Advanced Science

Sohwi Kim

Chansoo Yoon

Gwangtaek Oh

Young Woong Lee

Minjeong Shin

...

2022/5/24

Effect of annealing temperature on switching properties in Si-doped HfO2 films

Journal of Applied Physics

Sanghyun Park

Min Chul Chun

Min Jin Kim

Jun Young Lee

Yongjun Cho

...

2021/4/28

Effect of wake-up on the polarization switching dynamics of Si doped HfO2 thin films with imprint

Journal of Alloys and Compounds

Min Chul Chun

Sanghyun Park

Solmin Park

Ga-yeon Park

Min Jin Kim

...

2020/5/15

Highly stable, solution-processed quaternary oxide thin film-based resistive switching random access memory devices via global and local stoichiometric manipulation strategy

Nanotechnology

Dongyun Lee

Min Chul Chun

Hyungduk Ko

Bo Soo Kang

Jaekyun Kim

2020/4/6

See List of Professors in Bo Soo Kang University(Hanyang University)

Co-Authors

H-index: 54
Bae Ho Park

Bae Ho Park

Konkuk University

H-index: 51
B Kahng

B Kahng

Seoul National University

H-index: 48
Jang-Sik Lee

Jang-Sik Lee

Pohang University of Science and Technology

H-index: 39
Dong-Wook Kim

Dong-Wook Kim

Ewha Womans University

H-index: 38
Menka Jain

Menka Jain

University of Connecticut

H-index: 30
Seo Hyoung Chang

Seo Hyoung Chang

Chung-Ang University

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