Bhaswar Chakrabarti

About Bhaswar Chakrabarti

Bhaswar Chakrabarti, With an exceptional h-index of 13 and a recent h-index of 13 (since 2020), a distinguished researcher at Indian Institute of Technology Madras, specializes in the field of Nanoscale electronic devices, Neuromorphic computation, resistive memories, oxide electronics.

His recent articles reflect a diverse array of research interests and contributions to the field:

Memristive Dendritic Device with a Chemical Vapor-Deposited Monolayer MoS2 Film

Asymmetric Resistive Switching of Bilayer HfOx/AlOy and AlOy/HfOx Memristors: The Oxide Layer Characteristics and Performance Optimization for Digital …

Co-existence of interfacial and filamentary resistance switching in Ti/SiOx/Au resistive memory devices

Au resistive memory devices

Ferroelectric Field Effect Transistors–Based Content-Addressable Storage-Class Memory: A Study on the Impact of Device Variation and High-Temperature Compatibility

Design of Variation-Tolerant 1F-1T Memory Array for Neuromorphic Computing

Fixed charges at the HfO2/SiO2 interface: Impact on the memory window of FeFET

Coexistence of Interfacial and Filamentary Resistance Switching in Ti/SiO /Au Resistive Memory Devices

Bhaswar Chakrabarti Information

University

Position

Assistant Professor

Citations(all)

1278

Citations(since 2020)

939

Cited By

734

hIndex(all)

13

hIndex(since 2020)

13

i10Index(all)

19

i10Index(since 2020)

16

Email

University Profile Page

Indian Institute of Technology Madras

Google Scholar

View Google Scholar Profile

Bhaswar Chakrabarti Skills & Research Interests

Nanoscale electronic devices

Neuromorphic computation

resistive memories

oxide electronics

Top articles of Bhaswar Chakrabarti

Title

Journal

Author(s)

Publication Date

Memristive Dendritic Device with a Chemical Vapor-Deposited Monolayer MoS2 Film

ACS Applied Electronic Materials

Asmita S Thool

Sourodeep Roy

Upasana Mukherjee

Prahalad Kanti Barman

Saroj Poudyal

...

2024/1/31

Asymmetric Resistive Switching of Bilayer HfOx/AlOy and AlOy/HfOx Memristors: The Oxide Layer Characteristics and Performance Optimization for Digital …

ACS Applied Electronic Materials

Pradip Basnet

Erik C Anderson

Fabia Farlin Athena

Bhaswar Chakrabarti

Matthew P West

...

2023/3/8

Co-existence of interfacial and filamentary resistance switching in Ti/SiOx/Au resistive memory devices

IEEE Transactions on Electron Devices

S Roy

B Chakrabarti

E Bhattacharya

2023/8/28

Au resistive memory devices

Authorea Preprints

Sourodeep Roy

Bhaswar Chakrabarti

Enakshi Bhattacharya

2023/10/31

Ferroelectric Field Effect Transistors–Based Content-Addressable Storage-Class Memory: A Study on the Impact of Device Variation and High-Temperature Compatibility

Advanced Intelligent Systems

Athira Sunil

Masud Rana SK

Maximilian Lederer

Yannick Raffel

Franz Müller

...

2023

Design of Variation-Tolerant 1F-1T Memory Array for Neuromorphic Computing

Masud SK Rana

Sunanda Thunder

Franz Müller

Nellie Laleni

Yannick Raffel

...

2023/3/2

Fixed charges at the HfO2/SiO2 interface: Impact on the memory window of FeFET

Memories-Materials, Devices, Circuits and Systems

Masud Rana Sk

Shubham Pande

Franz Müller

Yannick Raffel

Maximilian Lederer

...

2023/7/1

Coexistence of Interfacial and Filamentary Resistance Switching in Ti/SiO /Au Resistive Memory Devices

IEEE Transactions on Electron Devices

S Roy

B Chakrabarti

E Bhattacharya

2023/8/28

Insulator-to-Metal Phase Transition in a Few-Layered MoSe 2 Field Effect Transistor

Nanoscale

Nihar R Pradhan

Carlos Garcia

Bhaswar Chakrabarti

Daniel Rosenmann

Ralu Divan

...

2023/1/6

Ferroelectric Content-Addressable Memory Cells with IGZO Channel: Impact of Retention Degradation on the Multibit Operation

ACS Applied Electronic Materials

Masud Rana Sk

Sunanda Thunder

David Lehninger

Yannick Raffel

Maximilian Lederer

...

2023/1/4

28 nm high-k-metal gate ferroelectric field effect transistors based synapses-A comprehensive overview

Yannick Raffel

Franz Müller

Sunanda Thunder

Masud Rana Sk

Maximilian Lederer

...

2023/4/26

FeFET-Based Content-Addressable Storage Class Memory: Device Variation and High-Temperature Compatibility

Athira Sunil

Masud SK Rana

Maximilian Lederer

Yannick Raffel

Franz Müller

...

2023/8/22

Thermal Crosstalk Analysis in RRAM Passive Crossbar Arrays

Shubham Pande

Bhaswar Chakrabarti

Anjan Chakravorty

2024/1/6

1F-1T Array: Current Limiting Transistor Cascoded FeFET Memory Array for Variation Tolerant Vector-Matrix Multiplication Operation

IEEE Transactions on Nanotechnology

Masud Rana Sk

Sunanda Thunder

Franz Müller

Nellie Laleni

Yannick Raffel

...

2023/7/14

Demonstration of a PECVD SiOx based RRAM dendritic device

IEEE Electron Device Letters

S Roy

E Bhattacharya

B Chakrabarti

2023/12/25

A physics-based compact model of thermal resistance in RRAMs

Solid-State Electronics

Shubham Pande

Suresh Balanethiram

Bhaswar Chakrabarti

Anjan Chakravorty

2023/3/15

Roadmap of Ferroelectric Memories: From Discovery to 3D Integration

Sourav De

Maximilian Lederer

Yannick Raffel

Franz Müller

David Lehninger

...

2023/6/28

Neuromorphic Computing with 28nm High-K-Metal Gate Ferroelectric Field Effect Transistors Based Artificial Synapses

Authorea Preprints

Sourav De

Yannick Raffel

Sunanda Thunder

Franz Müller

Maximilian Lederer

...

2023/10/31

Controllable Defect Engineering in 2D-MoS2 for high-performance, threshold switching memristive devices

Asmita S Thool

Sourodeep Roy

Abhishek Misra

Bhaswar Chakrabarti

2022/6/26

A Co-design view of Compute in-Memory with Non-Volatile Elements for Neural Networks

Wilfried Haensch

Anand Raghunathan

Kaushik Roy

Bhaswar Chakrabart

Charudatta M Phatak

...

2022/6/3

See List of Professors in Bhaswar Chakrabarti University(Indian Institute of Technology Madras)

Co-Authors

H-index: 76
Randall Feenstra

Randall Feenstra

Carnegie Mellon University

H-index: 57
Dmitri Strukov

Dmitri Strukov

University of California, Santa Barbara

H-index: 55
Eric M Vogel

Eric M Vogel

Georgia Institute of Technology

H-index: 32
Tania Roy

Tania Roy

University of Central Florida

H-index: 31
Farnood Merrikh Bayat

Farnood Merrikh Bayat

University of California, Santa Barbara

H-index: 26
Mirko Prezioso

Mirko Prezioso

University of California, Santa Barbara

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