ProfessorsProfessors of National Institute of Technology, KurukshetraAshutosh Nandi

Ashutosh Nandi

National Institute of Technology, Kurukshetra

H-index: 18

Asia-India

About Ashutosh Nandi

Ashutosh Nandi, With an exceptional h-index of 18 and a recent h-index of 17 (since 2020), a distinguished researcher at National Institute of Technology, Kurukshetra, specializes in the field of Semiconductor Devices, Device Modelling, Device circuit co-design, Digital Filter Design.

His recent articles reflect a diverse array of research interests and contributions to the field:

Noise performance of back‐barrier engineered GaN‐based trigate HEMT for X‐band applications

GaN based trigate HEMT with AlGaN back-barrier layer: proposal and investigation

Computational Technologies in Materials Science

Design and analysis of AlGaN/GaN based DG MOSHEMT for high-frequency application

Temperature sensitivity analysis of inner-gate engineered JL-SiNT-FET: An Analog/RF prospective

Modeling source/drain lateral Gaussian doping profile of DG-MOSFET using Green’s function approach

Ashutosh Nandi Information

University	National Institute of Technology, Kurukshetra
Position	Assistant professor at
Citations(all)	906
Citations(since 2020)	661
Cited By	488
hIndex(all)	18
hIndex(since 2020)	17
i10Index(all)	29
i10Index(since 2020)	27
Email	Access Email
University Profile Page	National Institute of Technology, Kurukshetra
Google Scholar	View Google Scholar Profile

Ashutosh Nandi Skills & Research Interests

Semiconductor Devices

Device Modelling

Device circuit co-design

Digital Filter Design

Top articles of Ashutosh Nandi

Title	Journal	Author(s)	Publication Date
Noise performance of back‐barrier engineered GaN‐based trigate HEMT for X‐band applications	International Journal of Numerical Modelling: Electronic Networks, Devices and Fields	Manish Verma Ashutosh Nandi	2024/3
GaN based trigate HEMT with AlGaN back-barrier layer: proposal and investigation	Semiconductor Science and Technology	Manish Verma Ashutosh Nandi	2022/5/5
Computational Technologies in Materials Science		Shubham Tayal Parveen Singla Ashutosh Nandi J Paulo Davim	2021/10/6
Design and analysis of AlGaN/GaN based DG MOSHEMT for high-frequency application	Transactions on Electrical and Electronic Materials	Manish Verma Ashutosh Nandi	2020/8
Temperature sensitivity analysis of inner-gate engineered JL-SiNT-FET: An Analog/RF prospective	Cryogenics	Shubham Tayal Vikas Mittal Sunil Jadav Shikhar Gupta Ashutosh Nandi ...	2020/6/1
Modeling source/drain lateral Gaussian doping profile of DG-MOSFET using Green’s function approach	Solid-State Electronics	Alok Kumar Shukla Ashutosh Nandi Sudeb Dasgupta	2020/9/1