Aryan Afzalian
Université Catholique de Louvain
H-index: 25
Europe-Belgium
Top articles of Aryan Afzalian
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
Semiconductor device | 2023/8/22 | ||
The impact of electron phonon scattering on transport properties of topological insulators: A first principles quantum transport study | Solid-State Electronics | Elaheh Akhoundi Michel Houssa Aryan Afzalian | 2023/3/1 |
Method for forming a fet device | 2023/6/8 | ||
Topological phases in two-dimensional transition metal halides and oxides | Michel Houssa Ruishen Meng Simon Mellaerts Elaheh Akhoundi Aryan Afzalian | 2023/10/22 | |
The Promise of 2-D Materials for Scaled Digital and Analog Applications | Devin Verreck Piet Wambacq Maarten Van De Put Zubair Ahmed Quentin Smets | 2023/2/19 | |
Field-effect transistor device | 2019/4/16 | ||
Full charge incorporation in ab initio simulations of two-dimensional semiconductor-based devices | Journal of Computational Electronics | Rutger Duflou Michel Houssa Aryan Afzalian | 2023/10 |
The Impact of Electron Phonon Scattering, Finite Size and Lateral Electric Field on Transport Properties of Topological Insulators: A First Principles Quantum Transport Study | Materials | Elaheh Akhoundi Michel Houssa Aryan Afzalian | 2023/2/15 |
Ultra-Scaled Si Nanowire Biosensors for Single DNA Molecule Detection | Sensors | Aryan Afzalian Denis Flandre | 2023/6/7 |
Ballistic heat transport in MoS2 monolayers | Rutger Duflou Michel Houssa Aryan Afzalian | 2023/9/27 | |
Forked-contact and dynamically-doped nanosheets to enhance Si and 2D-material devices at the limit of scaling | Solid-State Electronics | Aryan Afzalian Zubair Ahmed Julien Ryckaert | 2023/1/1 |
Fundamentals of low-resistive 2D-semiconductor metal contacts: an ab-initio NEGF study | npj 2D Materials and Applications | Rutger Duflou Geoffrey Pourtois Michel Houssa Aryan Afzalian | 2023/5/31 |
Pushing the limits of ab-initio-NEGF transport using efficient dissipative Mode-Space algorithms for realistic simulations of low-dimensional semiconductors including their … | Aryan Afzalian Fabian Ducry | 2023/9/27 | |
Full band incorporation in ab-initio simulations of two-dimensional semiconductor based devices | Rutger Duflou Michel Houssa Aryan Afzalian | 2023/3/9 | |
Method for manufacturing semiconductor device | 2016/1/12 | ||
Spin Filtering Properties of Structures Based on Stanene and Bismuthene Nanoribbons with Magnetism | Elaheh Akhoundi Michel Houssa Aryan Afzalian | 2023/12/21 | |
On Superior Hot Carrier Robustness of Dynamically-Doped Field-Effect-Transistors | Stanislav Tyaginov Aryan Afzalian Alexander Makarov Alexander Grill Michiel Vandemaele | 2022/3/27 | |
Towards sub-30nm Contacted Gate Pitch, Forked Contact and Dynamically-Doped Nanosheets to Enhance Si and 2D Materials Device Scaling | arXiv preprint arXiv:2203.06364 | Aryan Afzalian Zubair Ahmed Julien Ryckaert | 2022/3/12 |
Hetero-tunnel field-effect transistor (TFET) having a tunnel barrier formed directly above channel region, directly below first source/drain region and adjacent gate electrode | 2022/3/1 | ||
Dynamically doped field-effect transistor and a method for controlling such | 2022/4/14 |
