Angeline Klemm Smith
University of Minnesota-Twin Cities
H-index: 13
North America-United States
Top articles of Angeline Klemm Smith
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
Spin orbit memory devices with reduced magnetic moment and methods of fabrication | 2023/1/17 | ||
Conductive alloy layer in magnetic memory devices and methods of fabrication | 2023/9/26 | ||
Magnetic memory devices and methods of fabrication | 2023/8/22 | ||
Spin orbit memory devices with dual electrodes, and methods of fabrication | 2023/6/20 | ||
Magnetic memory devices with a transition metal dopant at an interface of free magnetic layers and methods of fabrication | 2023/3/28 | ||
Two terminal spin orbit memory devices and methods of fabrication | 2023/2/28 | ||
Spin orbit torque memory devices and methods of fabrication | 2022/3/15 | ||
Perpendicular spin transfer torque magnetic mechanism | 2022/9/6 | ||
Perpendicular spin transfer torque devices with improved retention and thermal stability | 2022/8/9 | ||
Spin orbit torque device with insertion layer between spin orbit torque electrode and free layer for improved performance | 2022/11/22 | ||
Magnetic memory devices with layered electrodes and methods of fabrication | 2022/7/5 | ||
Spin orbit torque (SOT) memory devices with enhanced magnetic anisotropy and methods of fabrication | 2022/10/18 | ||
Multi-layer spin orbit torque electrodes for perpendicular magnetic random access memory | 2022/6/28 | ||
Perpendicular exchange bias with antiferromagnet for spin orbit coupling based memory | 2022/10/18 | ||
Spin orbit torque (SOT) memory devices and their methods of fabrication | 2022/6/21 | ||
Spin orbit torque (SOT) memory devices and methods of fabrication | 2022/9/13 | ||
Magnetic memory devices with enhanced tunnel magnetoresistance ratio (TMR) and methods of fabrication | 2021/3/9 | ||
Multi-magnet stabilized spin orbit torque mram | 2020/4/2 | ||
Spin orbit memory devices with enhanced tunneling magnetoresistance ratio (tmr) and methods of fabrication | 2020/10/1 | ||
CMOS compatible process integration of SOT-MRAM with heavy-metal bi-layer bottom electrode and 10ns field-free SOT switching with STT assist | Noriyuki Sato Gary A Allen William P Benson Benjamin Buford Atreyee Chakraborty | 2020/6/16 |
