Andrei Vorobiev

Andrei Vorobiev

Chalmers tekniska högskola

H-index: 25

Europe-Sweden

About Andrei Vorobiev

Andrei Vorobiev, With an exceptional h-index of 25 and a recent h-index of 15 (since 2020), a distinguished researcher at Chalmers tekniska högskola, specializes in the field of ferroelectric and multiferroic emerging devices, microwave applications, thin films.

His recent articles reflect a diverse array of research interests and contributions to the field:

InP High-electron-mobility Transistors

Publisher's Note:“Geometrical magnetoresistance effect and mobility in graphene field-effect transistors”[Appl. Phys. Lett. 121, 013502 (2022)]

Geometrical magnetoresistance effect and mobility in graphene field-effect transistors

Charge carrier transport in graphene field-effect transistor scaled down to submicron gate lengths

Low-field mobility and high-field velocity of charge carriers in InGaAs/InP high-electron-mobility transistors

Mobility and quasi-ballistic charge carrier transport in graphene field-effect transistors

Terahertz rectennas on flexible substrates based on one-dimensional metal–insulator–graphene diodes

Integrated 10-GHz graphene FET amplifier

Andrei Vorobiev Information

University

Position

___

Citations(all)

2390

Citations(since 2020)

813

Cited By

2201

hIndex(all)

25

hIndex(since 2020)

15

i10Index(all)

57

i10Index(since 2020)

25

Email

University Profile Page

Chalmers tekniska högskola

Google Scholar

View Google Scholar Profile

Andrei Vorobiev Skills & Research Interests

ferroelectric and multiferroic emerging devices

microwave applications

thin films

Top articles of Andrei Vorobiev

Title

Journal

Author(s)

Publication Date

InP High-electron-mobility Transistors

Authorea Preprints

Isabel Harrysson Rodrigues

Andrei Vorobiev

2023/10/30

Publisher's Note:“Geometrical magnetoresistance effect and mobility in graphene field-effect transistors”[Appl. Phys. Lett. 121, 013502 (2022)]

Applied Physics Letters

Isabel Harrysson Rodrigues

Andrey Generalov

Anamul Md Hoque

Miika Soikkeli

Anton Murros

...

2022/9/12

Geometrical magnetoresistance effect and mobility in graphene field-effect transistors

Applied Physics Letters

Isabel Harrysson Rodrigues

Andrey Generalov

Anamul Md Hoque

Miika Soikkeli

Anton Murros

...

2022/7/4

Charge carrier transport in graphene field-effect transistor scaled down to submicron gate lengths

Isabel Harrysson Rodrigues

Andrei Vorobiev

2022/6/1

Low-field mobility and high-field velocity of charge carriers in InGaAs/InP high-electron-mobility transistors

IEEE Transactions on Electron Devices

Isabel Harrysson Rodrigues

Andrei Vorobiev

2022/2/15

Mobility and quasi-ballistic charge carrier transport in graphene field-effect transistors

Journal of Applied Physics

Isabel Harrysson Rodrigues

Niklas Rorsman

Andrei Vorobiev

2022/12/28

Terahertz rectennas on flexible substrates based on one-dimensional metal–insulator–graphene diodes

ACS Applied Electronic Materials

Andreas Hemmetter

Xinxin Yang

Zhenxing Wang

Martin Otto

Burkay Uzlu

...

2021/8/27

Integrated 10-GHz graphene FET amplifier

IEEE Journal of Microwaves

Ahmed Hamed

Muhammad Asad

Muh-Dey Wei

Andrei Vorobiev

Jan Stake

...

2021/6/29

High-speed hBN/graphene/hBN room-temperature terahertz nano-receivers

Leonardo Viti

Alisson R Cadore

David G Purdie

Jakob E Muench

Xinxin Yang

...

2021/3/5

Enhanced high-frequency performance of top-gated graphene FETs due to substrate-induced improvements in charge carrier saturation velocity

IEEE Transactions on Electron Devices

Muhammad Asad

Kjell O Jeppson

Andrei Vorobiev

Marlene Bonmann

Jan Stake

2021/1/8

Graphene FET on diamond for high-frequency electronics

IEEE Electron Device Letters

Muhammad Asad

Saman Majdi

Andrei Vorobiev

Kjell Jeppson

Jan Isberg

...

2021/12/28

Effects of Self-Heating on and Performance of Graphene Field-Effect Transistors

IEEE Transactions on Electron Devices

Marlene Bonmann

Marijana Krivic

Xinxin Yang

Andrei Vorobiev

Luca Banszerus

...

2020/1/29

Distinction of the thermoelectric effect in graphene FET THz detectors

Andrey A Generalov

Florian Ludwig

Mohsen Ahmadi

Marlene Bonmann

Andrei Vorobiev

...

2020/11/8

Does carrier velocity saturation help to enhance f max in graphene field-effect transistors?

Nanoscale advances

Pedro C Feijoo

Francisco Pasadas

Marlene Bonmann

Muhammad Asad

Xinxin Yang

...

2020

Direct nanoscopic observation of plasma waves in the channel of a graphene field-effect transistor

Light: Science & Applications

Amin Soltani

Frederik Kuschewski

Marlene Bonmann

Andrey Generalov

Andrei Vorobiev

...

2020/6/4

A linear-array of 300-GHz antenna integrated GFET detectors on a flexible substrate

IEEE Transactions on Terahertz Science and Technology

Xinxin Yang

Andrei Vorobiev

Jian Yang

Kjell Jeppson

Jan Stake

2020/5/26

Thermoelectric graphene photodetectors with sub-nanosecond response times at terahertz frequencies

Nanophotonics

Leonardo Viti

Alisson R Cadore

Xinxin Yang

Andrei Vorobiev

Jakob E Muench

...

2020/12/4

The dependence of the high-frequency performance of graphene field-effect transistors on channel transport properties

IEEE Journal of the Electron Devices Society

Muhammad Asad

Marlene Bonmann

Xinxin Yang

Andrei Vorobiev

Kjell Jeppson

...

2020/4/17

High-speed, low-noise thermoelectric graphene detectors at terahertz frequencies

Leonardo Viti

Alisson R Cadore

David G Purdie

Jakob E Muench

Xinxin Yang

...

2020/11/8

See List of Professors in Andrei Vorobiev University(Chalmers tekniska högskola)