Ali Naderi
Kermanshah University of Technology
H-index: 17
Asia-Iran
Top articles of Ali Naderi
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
Digital Hardware Implementation of Morris-Lecar, Izhikevich, and Hodgkin-Huxley Neuron Models With High Accuracy and Low Resources | IEEE Transactions on Circuits and Systems I: Regular Papers | Milad Ghanbarpour Ali Naderi Behzad Ghanbari Saeed Haghiri Arash Ahmadi | 2023/8/22 |
Efficient Digital Realization of Endocrine Pancreatic -Cells | IEEE Transactions on Biomedical Circuits and Systems | Milad Ghanbarpour Ali Naderi Saeed Haghiri Behzad Ghanbari Arash Ahmadi | 2023/1/3 |
Enhanced performance of SOI MESFETs by displacement of gate contact and applying double oxide packets | Electrical Engineering | Behrooz Fath-Ganji Ali Mir Ali Naderi Reza Talebzadeh Ali Farmani | 2023/10 |
Implementation of cardiac Purkinje Fiber cells Model: High speed and low cost hardware | AEU-International Journal of Electronics and Communications | Mahsa Salimi Mansouri Ali Naderi Behzad Ghanbari | 2022/8/1 |
Expanded Channel in the SOI MESFET by SiGe Regions to Improve the Current Capability and High-Frequency Features | Modeling and Simulation in Electrical and Electronics Engineering | Behrooz Fath-Gangi Ali Mir Ali Naderi Reza Talebzadeh Ali Farmani | 2022/11/1 |
Embedded metal and L-shaped oxide layers in silicon on insulator MESFETs: higher electric field tolerance and lower high frequency gate capacitances | Journal of Materials Science: Materials in Electronics | Elham Farahzad Ali Naderi | 2022/9 |
A novel metal–semiconductor device to enhance the current and unilateral power gains and 0 dB frequencies by SiO2 insertion in drift region | Materials Science and Engineering: B | Amir Abdi Ali Naderi | 2022/9/1 |
DC and RF characteristics improvement in SOI-MESFETs by inserting additional SiO2 layers and symmetric Si wells | Materials Science and Engineering: B | Sasan Khanjar Ali Naderi | 2021/10/1 |
Shifted gate electrode of silicon on insulator metal semiconductor FETs to amend the breakdown and transconductance | The European Physical Journal Plus | Ali Naderi Hamed Mohammadi | 2021/6/1 |
An Efficient Digital Realization of Retinal Light Adaptation in Cone Photoreceptors | IEEE Transactions on Circuits and Systems I: Regular Papers | Milad Ghanbarpour Ali Naderi Saeed Haghiri Arash Ahmadi | 2021/9/16 |
Proposal of a doping-less tunneling carbon nanotube field-effect transistor | Materials Science and Engineering: B | M. Ghodrati A. Mir A. Naderi | 2021 |
Embedding Two P+ Pockets in the Buried Oxide of Nano Silicon on Insulator MOSFETs: Controlled Short Channel Effects and Electric Field | Silicon | Zahra Aghaeipour Ali Naderi | 2020/11 |
High speed and low digital resources implementation of Hodgkin-Huxley neuronal model using base-2 functions | IEEE Transactions on Circuits and Systems I: Regular Papers | Saeed Haghiri Ali Naderi Behzad Ghanbari Arash Ahmadi | 2020/10/22 |
New structure of tunneling carbon nanotube FET with electrical junction in part of drain region and step impurity distribution pattern | AEU-International Journal of Electronics and Communications | Maryam Ghodrati Ali Mir Ali Naderi | 2020/4/1 |
Reduction in self-heating effect of SOI MOSFETs by three vertical 4H-SiC layers in the BOX | Silicon | Behrooz Abdi Tahne Ali Naderi Fatemeh Heirani | 2020/4 |
The use of a Gaussian doping distribution in the channel region to improve the performance of a tunneling carbon nanotube field-effect transistor | Journal of Computational Electronics | Ali Naderi Maryam Ghodrati Sobhi Baniardalani | 2020/3 |
Co-Authors
