ProfessorsProfessors of Universiti Teknologi MalaysiaAli Hosseingholi Pourasl

Ali Hosseingholi Pourasl

Universiti Teknologi Malaysia

H-index: 10

Asia-Malaysia

About Ali Hosseingholi Pourasl

Ali Hosseingholi Pourasl, With an exceptional h-index of 10 and a recent h-index of 10 (since 2020), a distinguished researcher at Universiti Teknologi Malaysia, specializes in the field of Nanoelectronics, Nanosensors, Semiconductors`, Micro Nano Devices.

His recent articles reflect a diverse array of research interests and contributions to the field:

An analytical conductance model for gas detection based on a zigzag carbon nanotube sensor

Analytical approach to study sensing properties of graphene based gas sensor

Explicit continuous charge-based compact model of surrounding gate MOSFET (SRGMOSFET) with smooth transition between partially-depleted to fully-depleted operation

Analytical prediction of highly sensitive CNT-FET-based sensor performance for detection of gas molecules

Ali Hosseingholi Pourasl Information

University	Universiti Teknologi Malaysia
Position	PhD of Electrical Engineering School of Electrical Engineering
Citations(all)	370
Citations(since 2020)	321
Cited By	176
hIndex(all)	10
hIndex(since 2020)	10
i10Index(all)	11
i10Index(since 2020)	11
Email	Access Email
University Profile Page	Universiti Teknologi Malaysia
Google Scholar	View Google Scholar Profile

Ali Hosseingholi Pourasl Skills & Research Interests

Nanoelectronics

Nanosensors

Semiconductors`

Micro Nano Devices

Top articles of Ali Hosseingholi Pourasl

Title	Journal	Author(s)	Publication Date
An analytical conductance model for gas detection based on a zigzag carbon nanotube sensor	Sensors	Ali Hosseingholipourasl Sharifah Hafizah Syed Ariffin Mohammad Taghi Ahmadi Seyed Saeid Rahimian Koloor Michal Petrů ...	2020/1/8
Analytical approach to study sensing properties of graphene based gas sensor	Sensors	Ali Hosseingholipourasl Sharifah Hafizah Syed Ariffin Yasser D Al-Otaibi Elnaz Akbari Fatimah KH Hamid ...	2020/3/9
Explicit continuous charge-based compact model of surrounding gate MOSFET (SRGMOSFET) with smooth transition between partially-depleted to fully-depleted operation	Semiconductor Science and Technology	Afiq Hamzah N Ezaila Alias Michael Loong Peng Tan Ali Hosseingholipourasl Razali Ismail	2020/3/5
Analytical prediction of highly sensitive CNT-FET-based sensor performance for detection of gas molecules	IEEE Access	Ali Hosseingholipourasl Sharifah Hafizah Syed Ariffin Seyed Saeid Rahimian Koloor Michal Petru Afiq Hamzah	2020/1/10