Alan Seabaugh
University of Notre Dame
H-index: 54
North America-United States
Top articles of Alan Seabaugh
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
Heterojunction Tunnel Field-Effect Transistors | Paolo Paletti Alan Seabaugh | 2022/11/11 | |
Pulsed current-voltage protocol to reveal polarization-continuation in ferroelectric memory: Implications for partial state storage | Mir Muntasir Hossain Pratyush Pandey Akif Aabrar Karla González Serrano Ted Moise | 2022/6/26 | |
Mark A. Reed (1955–2021) | Nature Nanotechnology | Laurie E Calvet Jia Chen Takhee Lee Alan Seabaugh | 2022/4 |
Confinement Related Phenomena in MoS2 Tubular Structures Grown from Vapour Phase | Maja Remskar Andreas K Hüttel Tatiana V Shubina Alan Seabaugh Sara Fathipour | 2022/3 | |
Electrical Properties of 6 nm to 19 nm Thick Polyethylene Oxide Capacitors for Ion/Electron Functional Devices | Journal of Electronic Materials | Karla Adriana Gonzalez-Serrano Alan C Seabaugh | 2021/6 |
Quantitative, experimentally-validated, model of MoS2 nanoribbon Schottky field-effect transistors from subthreshold to saturation | Journal of Applied Physics | Paolo Paletti Sara Fathipour Maja Remškar Alan Seabaugh | 2020/2/14 |
Electric-double-layer p–i–n junctions in WSe2 | Scientific Reports | Sara Fathipour Paolo Paletti Susan K Fullerton-Shirey Alan C Seabaugh | 2020/7/30 |
Resolution enhancement of transmission electron microscopy by super-resolution radial fluctuations | Applied Physics Letters | Y Zhang S Rouvimov X Yuan K Gonzalez-Serrano AC Seabaugh | 2020/1/27 |
A device non-ideality resilient approach for mapping neural networks to crossbar arrays | Arman Kazemi Cristobal Alessandri Alan C Seabaugh X Sharon Hu Michael Niemier | 2020/7/20 | |
Partial-polarization resistive electronic devices, neural network systems including partial-polarization resistive electronic devices and methods of operating the same | 2020/5/5 | ||
Batch-Fabricated WSe₂-on-Sapphire Field-Effect Transistors Grown by Chemical Vapor Deposition | IEEE Transactions on Electron Devices | M Asghari Heidarlou P Paletti B Jariwala JA Robinson SK Fullerton-Shirey | 2020/3/13 |
Gallium nitride tunneling field-effect transistors exploiting polarization fields | Applied Physics Letters | Alexander Chaney Henryk Turski Kazuki Nomoto Zongyang Hu Jimy Encomendero | 2020/2/18 |
Programming-pulse dependence of ferroelectric partial polarization: Insights from a comparative study of PZT and HZO capacitors | IEEE Transactions on Electron Devices | Pratyush Pandey Wan Sik Hwang KR Udayakumar Ted S Moise Alan C Seabaugh | 2020/8/21 |
