Ahtisham Pampori

About Ahtisham Pampori

Ahtisham Pampori, With an exceptional h-index of 5 and a recent h-index of 5 (since 2020), a distinguished researcher at Indian Institute of Technology Kanpur, specializes in the field of Gallium Nitride HEMTs, Compact Modeling, RF Power Amplifier Design.

His recent articles reflect a diverse array of research interests and contributions to the field:

GaN-based wide-band high-efficiency power amplifier with multi harmonic resonance

Optimizing Low Noise Amplifiers: A Two-Stage Approach for Improved Noise Figure and Stability

Compact SPICE Modeling of Application-Specific AlGaN/GaN HEMTs

Characterization and modeling of IV, CV and trapping behavior of SiC power MOSFETs

High Efficiency and High Linearity GaN Power Amplifier with Harmonic Tuning and Fundamental Matching Networks

A Large-Signal SPICE Model for a Dual-Gate GaN RF Switch With off-State Harmonic Control

A Width-Scalable SPICE Model of GaN-HEMTs for X-band RF Applications

Subcircuit Modeling of Dual Channel MOS-HEMTs Using Standard ASM-HEMT

Ahtisham Pampori Information

University

Position

___

Citations(all)

171

Citations(since 2020)

168

Cited By

46

hIndex(all)

5

hIndex(since 2020)

5

i10Index(all)

2

i10Index(since 2020)

2

Email

University Profile Page

Indian Institute of Technology Kanpur

Google Scholar

View Google Scholar Profile

Ahtisham Pampori Skills & Research Interests

Gallium Nitride HEMTs

Compact Modeling

RF Power Amplifier Design

Top articles of Ahtisham Pampori

Title

Journal

Author(s)

Publication Date

GaN-based wide-band high-efficiency power amplifier with multi harmonic resonance

Microelectronics Journal

Mohammad Zaid

Ahtisham Pampori

Mohammad Sajid Nazir

Yogesh Singh Chauhan

2024/3/1

Optimizing Low Noise Amplifiers: A Two-Stage Approach for Improved Noise Figure and Stability

IEEE Access

Mohammad Zaid

Purnima Kumari

Ahtisham Pampori

Mohammad Sajid Nazir

Umakant Goyal

...

2024/4/10

Compact SPICE Modeling of Application-Specific AlGaN/GaN HEMTs

Ahtisham Ul Haq Pampori

2023/7

Characterization and modeling of IV, CV and trapping behavior of SiC power MOSFETs

Mohammmad Sajid Nazir

Ahtisham Pampori

Yawar Hayat Zarkob

Anirban Kar

Yogesh Singh Chauhan

2023/3/7

High Efficiency and High Linearity GaN Power Amplifier with Harmonic Tuning and Fundamental Matching Networks

Mohammad Zaid

Ahtisham Pampori

Mohammad Sajid Nazir

Yogesh Singh Chauhan

2023/12/11

A Large-Signal SPICE Model for a Dual-Gate GaN RF Switch With off-State Harmonic Control

IEEE Transactions on Electron Devices

Ahtisham Pampori

Mohammad Sajid Nazir

Raghvendra Dangi

Min Li Chou

Geng Yen Lee

...

2023/10/11

A Width-Scalable SPICE Model of GaN-HEMTs for X-band RF Applications

Md Hasnain Ansari

Raghvendra Dangi

Ahtisham Pampori

Pragya Kushwaha

Ekta Yadav

...

2023/3/7

Subcircuit Modeling of Dual Channel MOS-HEMTs Using Standard ASM-HEMT

IEEE Transactions on Electron Devices

Raghvendra Dangi

Ahtisham Pampori

Praveen Pal

Yogesh Singh Chauhan

2023/8/23

Compact RF Modeling of GaN Varactors

Ahtisham Ul Haq Pampori

2023/3

A comprehensive rf characterization and modeling methodology for the 5nm technology node finfets

IEEE Journal of the Electron Devices Society

Shivendra Singh Parihar

Ahtisham Pampori

Praveen Dwivedi

Jun Huang

Weike Wang

...

2023/7/25

Characterization and modeling of drain lag using a modified RC network in the ASM-HEMT framework

Solid-State Electronics

Mohammad Sajid Nazir

Ahtisham Pampori

Raghvendra Dangi

Pragya Kushwaha

Ekta Yadav

...

2023/1/1

A Turnkey Large-Signal Model for Amplifier Design in 5G Spectra using AlGaN/GaN HEMTs

Yogesh S Chauhan

Ahtisham Pampori

Raghvendra Dangi

Pragya Kushwaha

Ekta Yadav

...

2022/3/6

S-band gan based power amplifier with symmetric matching network

Mohammad Zaid

Ahtisham Pampori

Raghvendra Dangi

Yogesh Singh Chauhan

2022/12/2

16 watt s-band gan based power amplifier using replicating stages

Mohammad Zaid

Ahtisham Pampori

Yogesh Singh Chauhan

2022/12/2

Electrical characterization and modeling of GaN HEMTs at cryogenic temperatures

IEEE Transactions on Electron Devices

Mohammad Sajid Nazir

Pragya Kushwaha

Ahtisham Pampori

Sheikh Aamir Ahsan

Yogesh Singh Chauhan

2022/9/20

A width-scalable SPICE compact model for GaN HEMTs including self-heating effect

Raghvendra Dangi

Ahtisham Pampori

Pragya Kushwaha

Ekta Yadav

Santanu Sinha

...

2022/6/26

Modeling the Impact of Dynamic Fin-Width on the I– V, C– V and RF Characteristics of GaN Fin–HEMTs

IEEE Transactions on Electron Devices

Ahtisham Ul Haq Pampori

Sheikh Aamir Ahsan

Yogesh Singh Chauhan

2022/3/18

A Charge-Based Silicon Carbide MOSFET Compact Model for Power Electronics Applications

Anirban Kar

Ahtisham Pampori

Noriyoshi Hashimoto

Yogesh Singh Chauhan

2021/11/11

Modeling and analysis of double channel GaN HEMTs using a physics-based analytical model

IEEE Journal of the Electron Devices Society

Rasik Rashid Malik

Mehak Ashraf Mir

Zarak Bhat

Ahtisham Pampori

Yogesh Singh Chauhan

...

2021/8/27

A low noise power amplifier MMIC to mitigate co-site interference in 5G front end modules

IEEE Access

Neha Bajpai

Ahtisham Pampori

Paramita Maity

Manish Shah

Amitava Das

...

2021/8/27

See List of Professors in Ahtisham Pampori University(Indian Institute of Technology Kanpur)

Co-Authors

H-index: 144
chenming hu

chenming hu

University of California, Berkeley

H-index: 49
Sudip Ghosh

Sudip Ghosh

Indian Institute of Technology Kanpur

H-index: 41
Yogesh S. Chauhan

Yogesh S. Chauhan

Indian Institute of Technology Kanpur

H-index: 31
sourabh khandelwal

sourabh khandelwal

University of California, Berkeley

H-index: 7
Dhawal Mahajan

Dhawal Mahajan

Macquarie University

H-index: 5
Praveen Pal

Praveen Pal

University of Delhi

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