Abderrezak Belabbes

Abderrezak Belabbes

Friedrich-Schiller-Universität Jena

H-index: 25

Europe-Germany

About Abderrezak Belabbes

Abderrezak Belabbes, With an exceptional h-index of 25 and a recent h-index of 19 (since 2020), a distinguished researcher at Friedrich-Schiller-Universität Jena, specializes in the field of Physics.

His recent articles reflect a diverse array of research interests and contributions to the field:

First-principles insight in structure-property relationships of hexagonal Si and Ge polytypes

Band lineup at hexagonal alloy interfaces

Giant optical oscillator strengths in perturbed hexagonal germanium

Design Aspects of Doped CeO2 for Low-Temperature Catalytic CO Oxidation: Transient Kinetics and DFT Approach

A DFT study of the adsorption energy and electronic interactions of the SO 2 molecule on a CoP hydrotreating catalyst

Cu, Sm co-doping effect on the CO oxidation activity of CeO2. A combined experimental and density functional study

Abderrezak Belabbes Information

University

Friedrich-Schiller-Universität Jena

Position

Germany. Physics

Citations(all)

2267

Citations(since 2020)

1213

Cited By

1549

hIndex(all)

25

hIndex(since 2020)

19

i10Index(all)

35

i10Index(since 2020)

27

Email

University Profile Page

Friedrich-Schiller-Universität Jena

Abderrezak Belabbes Skills & Research Interests

Physics

Top articles of Abderrezak Belabbes

First-principles insight in structure-property relationships of hexagonal Si and Ge polytypes

Authors

Martin Keller,Abderrezak Belabbes,Jürgen Furthmüller,Friedhelm Bechstedt,Silvana Botti

Journal

Physical Review Materials

Published Date

2023/6/8

Hexagonal SiGe is a promising material for combining electronic and photonic technologies. In this paper, the energetic, structural, elastic, and electronic properties of the hexagonal polytypes (2 H, 4 H, and 6 H) of silicon and germanium are thoroughly analyzed under equilibrium conditions. For this purpose, we apply state-of-the-art density functional theory. The phase diagram, obtained in the framework of a generalized Ising model, shows that the diamond structure is the most stable under ambient conditions, but hexagonal modifications are close to the phase boundary, especially for Si. Our band structure calculations using the modified-Becke-Johnson–local-density-approximation (MBJLDA) and Heyd-Scuseria-Ernzerhof (HSE06) exchange-correlation functionals predict significant changes in electronic states with hexagonality. While Si crystals are always semiconductors with indirect band gaps, the …

Band lineup at hexagonal alloy interfaces

Authors

Abderrezak Belabbes,Silvana Botti,Friedhelm Bechstedt

Journal

Physical Review B

Published Date

2022/8/10

The natural and true band profiles at heterojunctions formed by hexagonal Si x Ge 1− x alloys are investigated by a variety of methods: density-functional theory for atomic geometries, approximate quasiparticle treatments for electronic structures, different band-edge alignment procedures, and construction of various hexagonal unit cells to model alloys and heterojunctions. We demonstrate that the natural band offsets are rather unaffected by the choice to align the vacuum level or the branch point energy, as well as by the use of a hybrid or the Tran-Blaha functional. At interfaces between Ge-rich alloys we observe a type-I heterocharacter with direct band gaps, while Si-rich junctions are type-I but with an indirect band gap. The true band lineups at pseudomorphically grown heterostructures are strongly influenced by the generated biaxial strain of opposite sign in the two adjacent alloys. Our calculations show that …

Giant optical oscillator strengths in perturbed hexagonal germanium

Authors

Abderrezak Belabbes,Friedhelm Bechstedt,Silvana Botti

Journal

physica status solidi (RRL)–Rapid Research Letters

Published Date

2022/4

By means of ab initio calculations we demonstrate that perturbed hexagonal germanium is a superior material for active optoelectronic devices in the infrared spectral region. Perfect lonsdaleite germanium is a pseudodirect semiconductor, with a direct fundamental band gap but almost vanishing optical transitions. Perturbing the system by replacing a germanium atom with a silicon atom in the primitive cell increases the oscillator strength at the onset gap by orders of magnitude, with a concurrent blue shift of the transition energies. This effect is mainly due to the increased s character of the lowest conduction band because of the perturbation‐induced wave function mixing. A structural distortion of pure lonsdaleite Ge can enhance as well optical oscillator strengths, but their magnitude significantly depends on the specific details of the resulting atomic geometry. In particular, moderate tensile uniaxial strain can …

Design Aspects of Doped CeO2 for Low-Temperature Catalytic CO Oxidation: Transient Kinetics and DFT Approach

Authors

Kyriaki Polychronopoulou,Ayesha A AlKhoori,Angelos M Efstathiou,Maguy Abi Jaoude,CM Damaskinos,Mark A Baker,Alia Almutawa,Dalaver H Anjum,Michalis A Vasiliades,Abderrezak Belabbes,Lourdes F Vega,Abdallah Fathy Zedan,Steven J Hinder

Journal

ACS applied materials & interfaces

Published Date

2021/4/9

CO elimination through oxidation over highly active and cost-effective catalysts is a way forward for many processes of industrial and environmental importance. In this study, doped CeO2 with transition metals (TM = Cu, Co, Mn, Fe, Ni, Zr, and Zn) at a level of 20 at. % was tested for CO oxidation. The oxides were prepared using microwave-assisted sol–gel synthesis to improve catalyst’s performance for the reaction of interest. The effect of heteroatoms on the physicochemical properties (structure, morphology, porosity, and reducibility) of the binary oxides M–Ce–O was meticulously investigated and correlated to their CO oxidation activity. It was found that the catalytic activity (per gram basis or TOF, s–1) follows the order Cu–Ce–O > Ce–Co–O > Ni–Ce–O > Mn–Ce–O > Fe–Ce–O > Ce–Zn–O > CeO2. Participation of mobile lattice oxygen species in the CO/O2 reaction does occur, the extent of which is heteroatom …

A DFT study of the adsorption energy and electronic interactions of the SO 2 molecule on a CoP hydrotreating catalyst

Authors

Daniel Bahamon,Malathe Khalil,Abderrezak Belabbes,Yasser Alwahedi,Lourdes F Vega,Kyriaki Polychronopoulou

Journal

RSC advances

Published Date

2021

The adsorption energy and electronic properties of sulfur dioxide (SO2) adsorbed on different low-Miller index cobalt phosphide (CoP) surfaces were examined using density functional theory (DFT). Different surface atomic terminations and initial molecular orientations were systematically investigated in detail to determine the most active and stable surface for use as a hydrotreating catalyst. It was found that the surface catalytic reactivity of CoP and its performance were highly sensitive to the crystal plane, where the surface orientation/termination had a remarkable impact on the interfacial chemical bonding and electronic states toward the adsorption of the SO2 molecule. Specifically, analysis of the surface energy adsorption revealed that SO2 on Co-terminated surfaces, especially in (010), (101) and (110) facets, is energetically more favorable compared to other low index surfaces. Charge density difference …

Cu, Sm co-doping effect on the CO oxidation activity of CeO2. A combined experimental and density functional study

Authors

Ayesha A AlKhoori,Kyriaki Polychronopoulou,Abderrezak Belabbes,Maguy Abi Jaoude,Lourdes F Vega,Victor Sebastian,Steven Hinder,Mark A Baker,Abdallah F Zedan

Journal

Applied Surface Science

Published Date

2020/8/15

The co-doping effect of a rare earth (RE) metal and a transition metal (TM) on ceria oxidation catalysis through the evaluation of samarium-copper co-doped catalysts with Ce-Sm-xCu-O (x: 0–20 at.%, Ce/Sm = 1) nominal compositions, is discussed. The CO oxidation reaction was used as a prototype reaction due to its pivotal role in the fuel cell technology. Ce-Sm-20Cu-O catalyst presented a 64% increase in the CO oxidation activity compared to that of pristine ceria. Diffraction and Raman studies proved that the Cu, Sm co-doping induces many defects related to the dopants (Sm, Cu) and the oxygen vacant sites, while the presence of hybrid CuO/Ce-Sm(Cu)-O fluorite/SmO8 (cubic metastable) phases is the most representative scenario of this oxide microstructure. A size polydispersity of CuO phases was achieved by introducing air cooling during the microwave heating. Cu, Sm atoms were uniformly doped in CeO …

See List of Professors in Abderrezak Belabbes University(Friedrich-Schiller-Universität Jena)

Abderrezak Belabbes FAQs

What is Abderrezak Belabbes's h-index at Friedrich-Schiller-Universität Jena?

The h-index of Abderrezak Belabbes has been 19 since 2020 and 25 in total.

What are Abderrezak Belabbes's top articles?

The articles with the titles of

First-principles insight in structure-property relationships of hexagonal Si and Ge polytypes

Band lineup at hexagonal alloy interfaces

Giant optical oscillator strengths in perturbed hexagonal germanium

Design Aspects of Doped CeO2 for Low-Temperature Catalytic CO Oxidation: Transient Kinetics and DFT Approach

A DFT study of the adsorption energy and electronic interactions of the SO 2 molecule on a CoP hydrotreating catalyst

Cu, Sm co-doping effect on the CO oxidation activity of CeO2. A combined experimental and density functional study

are the top articles of Abderrezak Belabbes at Friedrich-Schiller-Universität Jena.

What are Abderrezak Belabbes's research interests?

The research interests of Abderrezak Belabbes are: Physics

What is Abderrezak Belabbes's total number of citations?

Abderrezak Belabbes has 2,267 citations in total.

What are the co-authors of Abderrezak Belabbes?

The co-authors of Abderrezak Belabbes are Friedhelm Bechstedt, J.E.M.Haverkort, Simone Assali.

    Co-Authors

    H-index: 101
    Friedhelm Bechstedt

    Friedhelm Bechstedt

    Friedrich-Schiller-Universität Jena

    H-index: 36
    J.E.M.Haverkort

    J.E.M.Haverkort

    Technische Universiteit Eindhoven

    H-index: 25
    Simone Assali

    Simone Assali

    École Polytechnique de Montréal

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