Aaron Goodman

Aaron Goodman

Massachusetts Institute of Technology

H-index: 9

North America-United States

About Aaron Goodman

Aaron Goodman, With an exceptional h-index of 9 and a recent h-index of 9 (since 2020), a distinguished researcher at Massachusetts Institute of Technology, specializes in the field of Condensed Matter Physics, 2D materials, Nonlinear Optics, Spectroscopy, Microscopy.

His recent articles reflect a diverse array of research interests and contributions to the field:

Nonlinear optical imaging

Substrate-Dependent Exciton Diffusion and Annihilation in Chemically Treated MoS2 and WS2

Aaron Goodman Information

University

Massachusetts Institute of Technology

Position

Ph.D.

Citations(all)

897

Citations(since 2020)

732

Cited By

517

hIndex(all)

9

hIndex(since 2020)

9

i10Index(all)

9

i10Index(since 2020)

9

Email

University Profile Page

Massachusetts Institute of Technology

Aaron Goodman Skills & Research Interests

Condensed Matter Physics

2D materials

Nonlinear Optics

Spectroscopy

Microscopy

Top articles of Aaron Goodman

Nonlinear optical imaging

Published Date

2020/12/1

Phase modulated Optical Parametric Amplification Imaging (p-OPA), can be used to determine the magnitude and the sign of the second-order nonlinear susceptibility of a material, and its spatial variation.

Substrate-Dependent Exciton Diffusion and Annihilation in Chemically Treated MoS2 and WS2

Authors

AJ Goodman,D-H Lien,GH Ahn,LL Spiegel,M Amani,AP Willard,A Javey,WA Tisdale

Journal

The Journal of Physical Chemistry C

Published Date

2020/5/21

Atomically thin semiconductors such as monolayer MoS2 and WS2 exhibit nonlinear exciton–exciton annihilation at notably low excitation densities (below ∼10 excitons/μm2 in exfoliated MoS2). Here, we show that the density threshold at which annihilation occurs can be tuned by changing the underlying substrate. When the supporting substrate is changed from SiO2 to Al2O3 or SrTiO3, the rate constant for second-order exciton–exciton annihilation, kXX [cm2/s], is reduced by 1 or 2 orders of magnitude, respectively. Using transient photoluminescence microscopy, we measure the effective room-temperature exciton diffusion coefficient in bis(trifluoromethane)sulfonimide-treated MoS2 to be in the range D = 0.03–0.06 cm2/s, corresponding to a diffusion length of LD = 350 nm for an exciton lifetime of τ = 18 ns, which does not depend strongly on the substrate. We discuss possible mechanisms for the observed …

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Aaron Goodman FAQs

What is Aaron Goodman's h-index at Massachusetts Institute of Technology?

The h-index of Aaron Goodman has been 9 since 2020 and 9 in total.

What are Aaron Goodman's top articles?

The articles with the titles of

Nonlinear optical imaging

Substrate-Dependent Exciton Diffusion and Annihilation in Chemically Treated MoS2 and WS2

are the top articles of Aaron Goodman at Massachusetts Institute of Technology.

What are Aaron Goodman's research interests?

The research interests of Aaron Goodman are: Condensed Matter Physics, 2D materials, Nonlinear Optics, Spectroscopy, Microscopy

What is Aaron Goodman's total number of citations?

Aaron Goodman has 897 citations in total.