zhe zhuang
King Abdullah University of Science and Technology
H-index: 19
Asia-Saudi Arabia
Top articles of zhe zhuang
Investigation of Ohmic contact to plasma-etched n-Al0.5Ga0.5N by surface treatment
Semiconductor Science and Technology
2024/4/12
High-Performance Solar-Blind Photodetector Based on (010)-Plane β-Ga2O3 Thermally Oxidized from Nonpolar (110)-Plane GaN
Applied Physics Letters
2023/7/24
High-temperature performance of InGaN-based amber micro-light-emitting diodes using an epitaxial tunnel junction contact
Applied Physics Letters
2024/4/1
Monolithic Integration of GaN-Based Transistors and Micro-LED
2024/3/12
Heteroepitaxial Growth of Nonpolar (1120)-Plane GaN Film via Composite Buffer Layer for the Promising Nonpolar GaN-based Devices
2024/1/20
Jianguo Zhao
H-Index: 6
Tao Tao
H-Index: 19
Zhe Zhuang
H-Index: 11
Bin Liu
H-Index: 31
Xiong Zhang
H-Index: 4
Improving the Electrical and Optical Characteristics of AlGaInP Red Micro-LEDs by Double Dielectric Passivation
2024
Achieving InGaN-based red light-emitting diodes by increasing the growth pressure of quantum wells
IEEE Photonics Technology Letters
2023/11/6
Wafer-scale emission uniformity of InGaN-based red light-emitting diodes on an in situ InGaN decomposition template
Applied Physics Letters
2023/9/11
Effects of Buffer Layer on Structural Properties of Nonpolar (11 2¯ 0)-Plane GaN Film
Crystals
2023/7/22
Jianguo Zhao
H-Index: 6
Tao Tao
H-Index: 19
Zhe Zhuang
H-Index: 11
Bin Liu
H-Index: 31
Xiong Zhang
H-Index: 4
Optimized InGaN/GaN Quantum Structure for High-Efficiency Micro-LEDs Displays With Low Current Injection
IEEE Transactions on Electron Devices
2023/6/21
Wafer-Scale Monolithic Integration of Blue Micro-Light-Emitting Diodes and Green/Red Quantum Dots for Full-Color Displays
IEEE Electron Device Letters
2023/6/13
Monolithic integration of GaN-based green micro-LED and quasi-vertical MOSFET utilizing a hybrid tunnel junction
IEEE Electron Device Letters
2023/5/31
Strain-compensated InGaN quantum-well red standard/micro-LEDs
2023/3/17
Dominant mechanism of GaN-based single contact micro-LED driven by AC power
IEEE Electron Device Letters
2023/1/16
Rapid growth of a 24 mm 2 scale hexagonal boron nitride crystal in Ni–Cr solution
Journal of Materials Chemistry C
2023
Effects of Mg-doping temperature on the structural and electrical properties of nonpolar a-plane p-type GaN films
Chinese Physics B
2023/12/1
Optimizing Al composition in barriers for InGaN amber micro-LEDs with high wall-plug efficiency
IEEE Electron Device Letters
2023/11/28
Investigation of highly reflective p-electrodes for AlGaN-based deep-ultraviolet light-emitting diodes
Optics Express
2023/11/20
Gallium nitride blue/green micro-LEDs for high brightness and transparency display
IEEE Electron Device Letters
2022/12/12
Cascade GaN-based micro-photodiodes for photonic integration
Journal of Physics D: Applied Physics
2022/8/3
