Young Jun Yoon
Kyungpook National University
H-index: 13
Asia-South Korea
Top articles of Young Jun Yoon
Fabrication of recessed-gate AlGaN/GaN MOSFETs using TMAH wet etching with Cu ion implantation
Results in Physics
2024/4/24
Capacitorless One-Transistor Dynamic Random-Access Memory with Novel Mechanism: Self-Refreshing
Nanomaterials
2024/1/12
Method for forming ohmic contact of GaN-based electronic device, and ohmic contact of GaN-based electronic device, manufactured thereby
2023/9/7
Method for manufacturing gan-based power device and ganbased power device manufactured thereby
2023/9/7
Betavoltaic battery and method for manufacturing betavoltaic battery
2023/9/7
Bulk-fin field-effect transistor-based capacitorless dynamic random-access memory and its immunity to the work-function variation effect
Japanese Journal of Applied Physics
2023/1/10
Design of a Capacitorless DRAM Based on a Polycrystalline-Silicon Dual-Gate MOSFET with a Fin-Shaped Structure
Nanomaterials
2022/10/9
Fabrication and Performances of Recessed Gate AlGaN/GaN MOSFETs with Si3N4/TiO2 Stacked Dual Gate Dielectric
J. Semicond. Technol. Sci
2022/4/1
Analysis for DC and RF Characteristics Recessed-Gate GaN MOSFET Using Stacked TiO2/Si3N4 Dual-Layer Insulator
Materials
2022/1/21
Universal dry synthesis and patterning of high-quality and-purity graphene quantum dots by ion-beam assisted chemical vapor deposition
Carbon
2022/1/1
Young Jun Yoon
H-Index: 19
Seoung Ho Lee
H-Index: 19
Fabrication of high-density out-of-plane microneedle arrays with various heights and diverse cross-sectional shapes
Nano-Micro Letters
2022/12
Young Jun Yoon
H-Index: 19
Dong-Hyun Kang
H-Index: 38
Simulation of CMOS logic inverter based on vertically stacked polycrystalline silicon nanosheet gate-all-around MOSFET and its electrical characteristics
Current Applied Physics
2022/11/1
Analysis and optimization for characteristics of vertical GaN junctionless MOSFETs depending on specifications of GaN substrates
Journal of Electrical Engineering & Technology
2022/11
Design of a Capacitorless DRAM Based on Storage Layer Separated Using Separation Oxide and Polycrystalline Silicon
Electronics
2022/10/18
Design of capacitorless DRAM based on polycrystalline silicon nanotube structure
IEEE Access
2021/12/7
Design and Analysis of DC/DC Boost Converter Vertical GaN Power Device based on Epitaxially Grown GaN-on-sapphire
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
2021/12
Min Su Cho
H-Index: 4
Sang Ho Lee
H-Index: 8
Jin Park
H-Index: 8
Young Jun Yoon
H-Index: 19
In Man Kang
H-Index: 16
Electrical Performances of GaN-based Vertical Trench MOSFETs with Cylindrical and Hexagonal Structure
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
2021/12
Young Jun Yoon
H-Index: 19
Min Su Cho
H-Index: 4
Sang Ho Lee
H-Index: 8
Jin Park
H-Index: 8
In Man Kang
H-Index: 16
Effect of Work-function Variation on Transfer Characteristics and Memory Performances for Gate-all-around JLFET based Capacitorless DRAM
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
2021/12
Sang Ho Lee
H-Index: 8
Young Jun Yoon
H-Index: 19
Min Su Cho
H-Index: 4
Jin Park
H-Index: 8
In Man Kang
H-Index: 16
Impact of process-dependent SiNx passivation on proton-induced degradation in GaN MIS-HEMTs
Results in Physics
2021/12/1
Experimental and simulation study of power performance improvement of GaN PIN betavoltaic cell
International Journal of Energy Research
2021/10/10
