Wen-Hao Chang
National Chiao Tung University
H-index: 46
Asia-Taiwan
Top articles of Wen-Hao Chang
The role of avalanche ionization in optical breakdown of monolayer two-dimensional materials
Bulletin of the American Physical Society
2024/3/5
Wen-Hao Chang
H-Index: 26
Self‐Aligned Contact Doping for Performance Enhancement of Low‐Leakage Carbon Nanotube Field Effect Transistors
Advanced Electronic Materials
2024/3
Semiconductor device
2023/8/22
Small Molecule Additives to Suppress Bundling in Dimensional‐Limited Self‐Alignment Method for High‐Density Aligned Carbon Nanotube Array
Advanced Materials Interfaces
2024/2
High-performance monolayer MoS2 nanosheet GAA transistor
Nanotechnology
2024/1/4
Wen-Hao Chang
H-Index: 26
Monolayer-MoS2 Stacked Nanosheet Channel with C-type Metal Contact
2023/12/9
Wen-Hao Chang
H-Index: 26
Jin Cai
H-Index: 4
Ultraviolet Photoresponse Enhancement of Graphene/AlxOy-NPs/MoS2 Heterostructure Photodetectors
IEEE Transactions on Electron Devices
2023/1/24
Wen-Hao Chang
H-Index: 26
Phonon polarization deformation in graphene induced by substrate coupling strengths
Applied Physics Letters
2023/1/16
Low N-Type Contact Resistance to Carbon Nanotubes in Highly Scaled Contacts through Dielectric Doping
2023/12/9
Han Wang
H-Index: 5
Wen-Hao Chang
H-Index: 26
Self-powered broadband photodetection enabled by facile CVD-grown MoS 2/GaN heterostructures
Nanoscale
2023
High-quality synthesis of Sulfur-based TMDs via Molecular Beam Epitaxy
APS March Meeting Abstracts
2023
Status and Performance of Integration Modules Toward Scaled CMOS with Transition Metal Dichalcogenide Channel
2023/12/9
Amin Azizi
H-Index: 11
Jin Cai
H-Index: 4
Katie Neilson
H-Index: 2
Wen-Hao Chang
H-Index: 26
Chih-I Wu
H-Index: 35
Bandgap Tuning for Monolayer TMD Materials by Using STM Tip
APS March Meeting Abstracts
2023
Chun-Liang Lin
H-Index: 12
Meng-Kai Lin
H-Index: 4
Juhn-Jong Lin
H-Index: 14
Wen-Hao Chang
H-Index: 26
Noriaki Takagi
H-Index: 16
Hydrostatic strain-induced reversible phase transition in bilayer MoS2
APS March Meeting Abstracts
2023
Wei-Ting Hsu
H-Index: 16
Wen-Hao Chang
H-Index: 26
Comprehensive Study of Contact Length Scaling Down to 12 nm With Monolayer MoS2 Channel Transistors
IEEE Transactions on Electron Devices
2023/11/8
Jin Cai
H-Index: 4
Wen-Hao Chang
H-Index: 26
Electronic Decoupling of Monolayer MoSe2 from Au(111) Substrate by Selenium Intercalation
APS March Meeting Abstracts
2023
Oriented lateral growth of two-dimensional materials on c-plane sapphire
Nature nanotechnology
2023/11
Isolation structure to increase image sensor performance
2023/10/5
Dielectric breakdown and sub-wavelength patterning of monolayer hexagonal boron nitride using femtosecond pulses
2D Materials
2023/9/25
Wen-Hao Chang
H-Index: 26
Tsing-Hua Her
H-Index: 8
Strain-Induced Sulfur Vacancies in Monolayer MoS2
ACS Materials Letters
2023/8/25
Co-Authors
