Venkata Raveendra Nallagatla

About Venkata Raveendra Nallagatla

Venkata Raveendra Nallagatla, With an exceptional h-index of 9 and a recent h-index of 8 (since 2020), a distinguished researcher at Hankuk University of Foreign Studies, specializes in the field of Neuromorphic Computing, Epitaxial Thin films, Multiferroic, Electroceramics, MEMS.

His recent articles reflect a diverse array of research interests and contributions to the field:

Enhanced remnant polarization in ferroelectric Hf0. 5Zr0. 5O2 thin film capacitors through Mo top electrode by post-metallization annealing treatment

Electronic Transport and Resistive Switching Properties in Topotactic SrFe1–xCoxO2.5 Devices

Graphene Quantum Dots as an Oxygen Reservoir for Topotactic Phase Transition‐Based Memristive Devices

Enhanced resistive switching properties of HfAlOx/ZrO2-based RRAM devices

Understanding the Behavior of Oxygen Vacancies in an SrFeOx/Nb: SrTiO3 Memristor

Ferromagnetic ReRAM in Sr(Fe,Co)Ox

Variable resistor, non-volatile memory element using the same, and method of fabricating the same

Significant error in significant figures?

Venkata Raveendra Nallagatla Information

University

Position

Department of Physics

Citations(all)

305

Citations(since 2020)

286

Cited By

118

hIndex(all)

9

hIndex(since 2020)

8

i10Index(all)

9

i10Index(since 2020)

8

Email

University Profile Page

Google Scholar

Venkata Raveendra Nallagatla Skills & Research Interests

Neuromorphic Computing

Epitaxial Thin films

Multiferroic

Electroceramics

MEMS

Top articles of Venkata Raveendra Nallagatla

Enhanced remnant polarization in ferroelectric Hf0. 5Zr0. 5O2 thin film capacitors through Mo top electrode by post-metallization annealing treatment

Physica B: Condensed Matter

2024/4/25

Venkata Raveendra Nallagatla
Venkata Raveendra Nallagatla

H-Index: 5

Electronic Transport and Resistive Switching Properties in Topotactic SrFe1–xCoxO2.5 Devices

ACS Applied Electronic Materials

2024/4/22

Graphene Quantum Dots as an Oxygen Reservoir for Topotactic Phase Transition‐Based Memristive Devices

Advanced Electronic Materials

2023/11

Venkata Raveendra Nallagatla
Venkata Raveendra Nallagatla

H-Index: 5

Miyoung Kim
Miyoung Kim

H-Index: 33

Enhanced resistive switching properties of HfAlOx/ZrO2-based RRAM devices

Progress in Natural Science: Materials International

2022/10/1

Venkata Raveendra Nallagatla
Venkata Raveendra Nallagatla

H-Index: 5

Understanding the Behavior of Oxygen Vacancies in an SrFeOx/Nb: SrTiO3 Memristor

Electronic Materials Letters

2022/3

Ferromagnetic ReRAM in Sr(Fe,Co)Ox

한국자기학회 학술연구발표회 논문개요집

2021/11

Venkata Raveendra Nallagatla
Venkata Raveendra Nallagatla

H-Index: 5

Variable resistor, non-volatile memory element using the same, and method of fabricating the same

2021/1/5

Significant error in significant figures?

Journal of the Korean Physical Society

2021/1

Venkata Raveendra Nallagatla
Venkata Raveendra Nallagatla

H-Index: 5

Resistive switching behavior in epitaxial brownmillerite SrFeO2. 5/Nb: SrTiO3 heterojunction

Applied Physics Letters

2020/10/5

Venkata Raveendra Nallagatla
Venkata Raveendra Nallagatla

H-Index: 5

In situ observations of topotactic phase transitions in a ferrite memristor

Journal of Applied Physics

2020/8/21

Complementary Resistive Switching and Synaptic-Like Memory Behavior in an Epitaxial SrFeO2.5 Thin Film through Oriented Oxygen-Vacancy Channels

ACS Applied Materials & Interfaces

2020/8/17

Self‐Assembled NiO Nanocrystal Arrays as Memristive Elements

Advanced Electronic Materials

2020/5

Effects of the Heterointerface on the Growth Characteristics of a Brownmillerite SrFeO2.5 Thin Film Grown on SrRuO3 and SrTiO3 Perovskites

Scientific reports

2020/3/2

See List of Professors in Venkata Raveendra Nallagatla University(Hankuk University of Foreign Studies)

Co-Authors

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