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Tedi Kujofsa

Tedi Kujofsa

University of Connecticut

H-index: 11

North America-United States

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About Tedi Kujofsa

Tedi Kujofsa, With an exceptional h-index of 11 and a recent h-index of 6 (since 2020), a distinguished researcher at University of Connecticut, specializes in the field of Semiconductor Heteroepitaxy.

His recent articles reflect a diverse array of research interests and contributions to the field:

Lattice Relaxation of Epitaxial FAPbI3 on MAPbClxBr3-x (001)

Critical Layer Thickness for Epitaxial FAPbBrxI3-x on KCl (001)

a) Coop a) дf

Recent Advances in the Modeling of ZnSySe1-y/GaAs (001) Heterostructures with Application to Dislocation Sidewall Gettering

Inclusion of Dislocation Pinning Interactions in a Model for Plastic Flow in II–VI Semiconductors

Dislocation Sidewall Gettering in II-VI Semiconductors and the Effect of Dislocation Pinning Interactions

Threading Dislocation Dynamics in ZnSSe Strained-Layer Superlattices

Recent Advances in the Modeling of Strain Relaxation and Dislocation Dynamics in ZnSSe/GaAs (001) Heterostructures

Tedi Kujofsa Information

University

Position

___

Citations(all)

756

Citations(since 2020)

252

Cited By

586

hIndex(all)

11

hIndex(since 2020)

6

i10Index(all)

14

i10Index(since 2020)

4

Email

University Profile Page

Google Scholar

Tedi Kujofsa Skills & Research Interests

Semiconductor Heteroepitaxy

Top articles of Tedi Kujofsa

Lattice Relaxation of Epitaxial FAPbI3 on MAPbClxBr3-x (001)

International Journal of High Speed Electronics and Systems

2022/3

Johanna Raphael
Johanna Raphael

H-Index: 1

Tedi Kujofsa
Tedi Kujofsa

H-Index: 7

Critical Layer Thickness for Epitaxial FAPbBrxI3-x on KCl (001)

International Journal of High Speed Electronics and Systems

2022/3

Johanna Raphael
Johanna Raphael

H-Index: 1

Tedi Kujofsa
Tedi Kujofsa

H-Index: 7

a) Coop a) дf

Nanotechnology For Electronics, Biosensors, Additive Manufacturing And Emerging Systems Applications

2021/6/22

Recent Advances in the Modeling of ZnSySe1-y/GaAs (001) Heterostructures with Application to Dislocation Sidewall Gettering

2021/5/7

John Ayers
John Ayers

H-Index: 20

Tedi Kujofsa
Tedi Kujofsa

H-Index: 7

Johanna Raphael
Johanna Raphael

H-Index: 1

Inclusion of Dislocation Pinning Interactions in a Model for Plastic Flow in II–VI Semiconductors

Journal of Electronic Materials

2020/11

Dislocation Sidewall Gettering in II-VI Semiconductors and the Effect of Dislocation Pinning Interactions

Journal of Electronic Materials

2020/11

Threading Dislocation Dynamics in ZnSSe Strained-Layer Superlattices

ECS Transactions

2020/4/24

Johanna Raphael
Johanna Raphael

H-Index: 1

Tedi Kujofsa
Tedi Kujofsa

H-Index: 7

Recent Advances in the Modeling of Strain Relaxation and Dislocation Dynamics in ZnSSe/GaAs (001) Heterostructures

ECS Transactions

2020/4/24

Tedi Kujofsa
Tedi Kujofsa

H-Index: 7

Johanna Raphael
Johanna Raphael

H-Index: 1

Experimental and Modeling Results for Dislocation Sidewall Gettering in ZnSSe/GaAs (001)

ECS Transactions

2020/4/24

Johanna Raphael
Johanna Raphael

H-Index: 1

Tedi Kujofsa
Tedi Kujofsa

H-Index: 7

Comparison of Nonlinear Grading Approaches for ZnSSe/GaAs (001) Heterostructrures

ECS Transactions

2020/4/24

Tedi Kujofsa
Tedi Kujofsa

H-Index: 7

A Modeling Study of Dislocation Sidewall Gettering in II-VI and III-V Semiconductor Heterostructures

International Journal of High Speed Electronics and Systems

2020/3

Tedi Kujofsa
Tedi Kujofsa

H-Index: 7

A Zagging and Weaving Model for Dislocation Interactions in Heterostructures Containing Strain Reversals

International Journal of High Speed Electronics and Systems

2020/3

Tedi Kujofsa
Tedi Kujofsa

H-Index: 7

Comparison of Buffer Layer Grading Approaches in InGaAs/GaAs (001)

International Journal of High Speed Electronics and Systems

2020/3

Johanna Raphael
Johanna Raphael

H-Index: 1

Tedi Kujofsa
Tedi Kujofsa

H-Index: 7

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