Tao Ying
Harbin Institute of Technology
H-index: 8
Asia-China
Top articles of Tao Ying
Defect Identification in β-Ga2O3 Schottky Barrier Diodes with electron radiation and annealing regulating
IEEE Transactions on Nuclear Science
2024/4/1
Stripes and the Emergence of Charge -phase Shifts in Isotropically Paired Systems
arXiv preprint arXiv:2402.17305
2024/2/27
Tao Ying
H-Index: 4
The Influence of Deep-Level Defects With Various Depths in SiO2 on Ionizing Damage
IEEE Transactions on Nuclear Science
2023/1/23
Hao Jiang
H-Index: 9
Tao Ying
H-Index: 4
Strain-dependent magnetic ordering switching in 2D AFM ternary V-based chalcogenide monolayers
Nanoscale
2023
The Superconducting d-wave Pairing and Antiferromagnetic Order on the Coupled Hubbard Ladders: A Quantum Monte Carlo Study
Journal of Superconductivity and Novel Magnetism
2023/1
Shuhui Yang
H-Index: 1
Tao Ying
H-Index: 4
Simulation of space heavy-ion induced primary knock-on atoms in bipolar devices
Chinese Physics B
2023/12/1
Bayesian Network Modeling of Transistor-level Total Ionizing Dose Effects Impact on Circuit Electrical Response in Space Environment
IEEE Transactions on Nuclear Science
2023/11/16
Unraveling optical degradation mechanism of β-Ga2O3 by Si4+ irradiation: A combined experimental and first-principles study
Applied Physics Letters
2023/7/31
Library of intrinsic defects in β-Ga2O3: First-principles studies
Materials Today Communications
2023/6/1
Optimal charge inhomogeneity for the d+id-wave superconductivity in the intercalated graphite CaC6
Frontiers of Physics
2023/6
Shuhui Yang
H-Index: 1
Tao Ying
H-Index: 4
Unveiling the Linear Photogalvanic Effect in a Two-Dimensional Organic Tin Halide Perovskite: (CH3)2NH2SnI3
ACS Applied Energy Materials
2023/4/28
Response mechanisms of additional displacement defects in oxides to ionization damage in bipolar transistors
IEEE Transactions on Nuclear Science
2023/3/16
Ferroelectricity and High Curie Temperature in a 2D Janus Magnet
ACS Applied Materials & Interfaces
2023/2/12
To define nonradiative defects in semiconductors: An accurate DLTS simulation based on first-principle
Computational Materials Science
2022/12/1
Detection Method for Sensitive Parts of Ionization Damage in Bipolar Transistor
2022/11/3
Detection Method for the Radiation-induced Defects of Oxide Layer in Electronic Devices
2022/11/3
Effect of hopping anisotropy on the d-wave pairing in the Hubbard model: From two-leg ladder to square lattice
Physics Letters A
2022/9/30
Pairing in the Hubbard model on the honeycomb lattice with hopping up to the third-nearest-neighbor
Physics Letters A
2022/8/5
Shuhui Yang
H-Index: 1
Tao Ying
H-Index: 4
Enhanced d-wave pairing in the two-dimensional Hubbard model with periodically modulated hopping amplitudes
Journal of Physics: Condensed Matter
2022/7/13
Shuhui Yang
H-Index: 1
Tao Ying
H-Index: 4
Evidence for pressure induced unconventional quantum criticality in the coupled spin ladder antiferromagnet C9H18N2CuBr4
Nature Communications
2022/6/2
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