Suman Bhandari
University of Alabama at Birmingham
H-index: 6
North America-United States
Top articles of Suman Bhandari
Photo-induced electron paramagnetic resonance: A means to identify defects and the defect level throughout the bandgap of ultrawide bandgap semiconductors
Applied Physics Letters
2024/1/22
Suman Bhandari
H-Index: 2
Optical, electrical, and EPR studies of polycrystalline Al: Cr: ZnSe gain elements
Optical Materials Express
2023/5/1
Optical transitions of gallium vacancies in neutron irradiated β-Ga2O3
Journal of Applied Physics
2022/7/14
Suman Bhandari
H-Index: 2
Optical transitions of neutral Mg in Mg-doped β-Ga2O3
APL Materials
2022/2/1
Suman Bhandari
H-Index: 2
Study of V in -GaO through EPR
Bulletin of the American Physical Society
2022/1/23
Suman Bhandari
H-Index: 2
Optical absorption of point defects in doped gallium oxide determined by photo-induced electron paramagnetic resonance spectroscopy
2022
Suman Bhandari
H-Index: 2
Fe-related optical transitions in floating zone and Czochralski grown ????-Ga2O3 crystals
Journal of Applied Physics
2021/10/26
Suman Bhandari
H-Index: 2
Mg-related charge transitions in Mg-doped Ga2O3
2021/3/5
Suman Bhandari
H-Index: 2
Charge trapping at Fe due to midgap levels in Ga2O3
Journal of Applied Physics
2021/2/28
Suman Bhandari
H-Index: 2
Mid-gap defect levels of gallium oxide
APS March Meeting Abstracts
2021
Suman Bhandari
H-Index: 2
The angular dependence of point defects in GaO, and how their roadmaps are used to determine the type of impurities
Bulletin of the American Physical Society
2020/11/6
Suman Bhandari
H-Index: 2
Transition levels for impurities in β-Ga2O3
Bulletin of the American Physical Society
2020/3/3
Suman Bhandari
H-Index: 2
Optical transitions for impurities in Ga2O3 as determined by photo-induced electron paramagnetic resonance spectroscopy
Journal of Applied Physics
2020/2/14
Suman Bhandari
H-Index: 2
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