Shubham Sahay

About Shubham Sahay

Shubham Sahay, With an exceptional h-index of 21 and a recent h-index of 20 (since 2020), a distinguished researcher at Indian Institute of Technology Kanpur, specializes in the field of Nanoscale Device Design and Modeling, Neuromorphic Computing, Hardware Security.

His recent articles reflect a diverse array of research interests and contributions to the field:

Revisiting Lateral-BTBT Gate-Induced Drain Leakage in Nanowire FETs for 1T-DRAM

Parasitic Gate Capacitance Model for N-Stack Forksheet FETs

Capacitor-less 1T-DRAM as Synaptic Element for Online Learning

Hybrid CMOS-Ferroelectric FET-Based Image Sensor With Tunable Dynamic Range

Bilayer Synthetic Antiferromagnetic Skyrmion-Based Muller C-Element

Satisfiability Attack-Resilient Camouflaged Multiple Multivariable Logic-in-Memory Exploiting 3D NAND Flash Array

Ferroelectric FET based Bayesian Inference Engine for Disease Diagnosis

Efficient Implementation of Mahalanobis Distance on Ferroelectric FinFET Crossbar for Outlier Detection

Shubham Sahay Information

University

Position

Assistant Professor Department of Electrical Engineering

Citations(all)

1453

Citations(since 2020)

1256

Cited By

664

hIndex(all)

21

hIndex(since 2020)

20

i10Index(all)

33

i10Index(since 2020)

32

Email

University Profile Page

Google Scholar

Shubham Sahay Skills & Research Interests

Nanoscale Device Design and Modeling

Neuromorphic Computing

Hardware Security

Top articles of Shubham Sahay

Revisiting Lateral-BTBT Gate-Induced Drain Leakage in Nanowire FETs for 1T-DRAM

IEEE Transactions on Electron Devices

2024/2/21

Shubham Sahay
Shubham Sahay

H-Index: 15

Parasitic Gate Capacitance Model for N-Stack Forksheet FETs

IEEE Transactions on Electron Devices

2024/1/22

Sanjay Sharma
Sanjay Sharma

H-Index: 1

Shubham Sahay
Shubham Sahay

H-Index: 15

Capacitor-less 1T-DRAM as Synaptic Element for Online Learning

Authorea Preprints

2023/12/7

Shubham Sahay
Shubham Sahay

H-Index: 15

Hybrid CMOS-Ferroelectric FET-Based Image Sensor With Tunable Dynamic Range

IEEE Transactions on Electron Devices

2023/11/15

Rahul Kumar Singh
Rahul Kumar Singh

H-Index: 2

Shubham Sahay
Shubham Sahay

H-Index: 15

Bilayer Synthetic Antiferromagnetic Skyrmion-Based Muller C-Element

IEEE Transactions on Electron Devices

2023/11/15

Sneh Saurabh
Sneh Saurabh

H-Index: 8

Shubham Sahay
Shubham Sahay

H-Index: 15

Satisfiability Attack-Resilient Camouflaged Multiple Multivariable Logic-in-Memory Exploiting 3D NAND Flash Array

IEEE Transactions on Circuits and Systems I: Regular Papers

2023/11/2

Ayush Saxena
Ayush Saxena

H-Index: 0

Shubham Sahay
Shubham Sahay

H-Index: 15

Ferroelectric FET based Bayesian Inference Engine for Disease Diagnosis

Authorea Preprints

2023/10/31

Shubham Sahay
Shubham Sahay

H-Index: 15

Efficient Implementation of Mahalanobis Distance on Ferroelectric FinFET Crossbar for Outlier Detection

Authorea Preprints

2023/10/31

Shubham Sahay
Shubham Sahay

H-Index: 15

Exploiting Drain-Erase Scheme in Ferroelectric FETs for Logic-in-Memory

2023/5/23

Shubham Sahay
Shubham Sahay

H-Index: 15

A computationally efficient compact model for ferroelectric FinFETs switching with asymmetric non-periodic input signals

Authorea Preprints

2023/10/31

Assessing the Performance of Reinforcement Learning on Passive RRAM Crossbar Array

Authorea Preprints

2023/10/30

Arjun Tyagi
Arjun Tyagi

H-Index: 4

Shubham Sahay
Shubham Sahay

H-Index: 15

Ultra-compact neural network adc exploiting ferroelectric fet

Authorea Preprints

2023/10/30

Analytical Modeling of Threshold Voltage and Subthreshold Slope for 3D NAND Flash Memory With a Non-Uniform Doping Profile

Applied Physics A

2019/10

Ferroelectric FET-Based Time-Mode Multiply-Accumulate Accelerator: Design and Analysis

IEEE Transactions on Electron Devices

2023/10/18

Amol Gaidhane
Amol Gaidhane

H-Index: 4

Shubham Sahay
Shubham Sahay

H-Index: 15

Junction‐Less Field Effect Transistors: The First Transistor to be Conceptualized

75th Anniversary of the Transistor

2023/7/3

Mamidala Jagadesh Kumar
Mamidala Jagadesh Kumar

H-Index: 31

Shubham Sahay
Shubham Sahay

H-Index: 15

Parasitic capacitance model for stacked gate-all-around nanosheet FETs

IEEE Transactions on Electron Devices

2023/6/12

Sanjay Sharma
Sanjay Sharma

H-Index: 1

Shubham Sahay
Shubham Sahay

H-Index: 15

Impact of transport mechanism on binding kinematics and sensitivity of FET biosensors

IEEE Transactions on Electron Devices

2023/6/12

Amit Bhattacharyya
Amit Bhattacharyya

H-Index: 8

Shubham Sahay
Shubham Sahay

H-Index: 15

An Automatic Leakage Compensation Technique for Capacitively Coupled Class-AB Operational Amplifiers

2023/5/21

Hybrid CMOS-RRAM true random number generator exploiting coupled entropy sources

IEEE Transactions on Electron Devices

2023/2/8

Shubham Sahay
Shubham Sahay

H-Index: 15

Scaling the MOSFET: detrimental short channel effects and mitigation techniques

2023/1/1

Shubham Sahay
Shubham Sahay

H-Index: 15

See List of Professors in Shubham Sahay University(Indian Institute of Technology Kanpur)

Co-Authors

academic-engine