Shruti Nirantar
RMIT University
H-index: 12
Oceania-Australia
Top articles of Shruti Nirantar
Lead‐Free Perovskites and Metal Halides for Resistive Switching Memory and Artificial Synapse
2024/4/3
Interplay between Strain and Defects at the Interfaces of Ultra‐Thin Hf0.5Zr0.5O2‐Based Ferroelectric Capacitors
Advanced Electronic Materials
2023/10
Influence of Interfaces on the Enhanced Ferroelectricity of Ultra-Thin HZO-Based Tunnel Junctions
2023/7/23
Circuit Model for Nanoscale Optical Frequency Electronics
2023/7/10
Shruti Nirantar
H-Index: 8
Metal‐Air Field Emission Devices–Nano Electrode Geometries Comparison of Performance and Stability (Small 47/2022)
Small
2022/11
Shruti Nirantar
H-Index: 8
Jie Tian
H-Index: 3
Madhu Bhaskaran
H-Index: 40
Sumeet Walia
H-Index: 31
Sharath Sriram
H-Index: 40
Ferroelectricity Improvement in Ultra‐Thin Hf0.5Zr0.5O2 Capacitors by the Insertion of a Ti Interfacial Layer
physica status solidi (RRL)–Rapid Research Letters
2022/10
Pedro Rojo Romeo
H-Index: 13
Shruti Nirantar
H-Index: 8
Sharath Sriram
H-Index: 40
Bertrand Vilquin
H-Index: 15
Solution-Processed VO2 Nanoparticle/Polymer Composite Films for Thermochromic Applications
ACS Applied Nano Materials
2022/7/20
Comparative Study of sub-8 nm HZO-Based Ferroelectric Tunnel Junctions with Enhanced Ferroelectricity
2022/6/27
Pedro Rojo Romeo
H-Index: 13
Shruti Nirantar
H-Index: 8
Sharath Sriram
H-Index: 40
Bertrand Vilquin
H-Index: 15
Fabrication process for sub-8 nm HfZrO2-based ferroelectric tunnel junctions with enhanced properties
2022/5/30
Pedro Rojo Romeo
H-Index: 13
Shruti Nirantar
H-Index: 8
Sharath Sriram
H-Index: 40
Bertrand Vilquin
H-Index: 15
Device Geometry Insights for Efficient Electrically Driven Insulator‐to‐Metal Transition in Vanadium Dioxide Thin‐Films
Advanced Electronic Materials
2022/1
Fabrication of GaN nano-towers based self-powered UV photodetector
Scientific Reports
2021/5/25
Amorphous Metal Oxide Bilayers to Avoid Sneak-Path Currents for High-Density Resistive Memory Arrays
Advanced Intelligent Systems
2021/3/18
Role of ultra-thin Ti and Al interfacial layers in HfZrO2 ferroelectric tunnel junctions
2021/9/20
Pedro Rojo Romeo
H-Index: 13
Shruti Nirantar
H-Index: 8
Sharath Sriram
H-Index: 40
Bertrand Vilquin
H-Index: 15
Influence of Temperature on Photodetection Properties of Honeycomb‐like GaN Nanostructures
Advanced Materials Interfaces
2021/7
Phase change vanadium dioxide light sensors
Applied Materials Today
2020/12/1
Artificial somatosensors: Feedback receptors for electronic skins
Advanced Intelligent Systems
2020/11
Md Ataur Rahman
H-Index: 9
Sumeet Walia
H-Index: 31
Shruti Nirantar
H-Index: 8
Madhu Bhaskaran
H-Index: 40
Sharath Sriram
H-Index: 40
In situ transmission electron microscopy with biasing and fabrication of asymmetric crossbars based on mixed-phased a-VOx
JoVE (Journal of Visualized Experiments)
2020/5/13
Shruti Nirantar
H-Index: 8
Sharath Sriram
H-Index: 40
Switchable nanoelectronic devices beyond silicon
2020/2
Shruti Nirantar
H-Index: 8
In situ nanostructural analysis of threshold switching in mixed-phase amorphous vanadium oxide crossbar devices
2020/1
Shruti Nirantar
H-Index: 8
Md Ataur Rahman
H-Index: 9
Madhu Bhaskaran
H-Index: 40
Sumeet Walia
H-Index: 31
Sharath Sriram
H-Index: 40
Broadband photodetection using phase change vanadium dioxide microstructures
2020/1
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