Seong Jun Kang
Kyung Hee University
H-index: 30
Asia-South Korea
Top articles of Seong Jun Kang
Enhancement of the Visible Light Photodetection of Inorganic Photodiodes via Additional Quantum Dots Layers
Micromachines
2024/2/25
Seong Jun Kang
H-Index: 18
Low-Power Phototransistor with Enhanced Visible-Light Photoresponse and Electrical Performances Using an IGZO/IZO Heterostructure
Materials
2024/1/30
Seong Jun Kang
H-Index: 18
Effects of ZnSO4 concentration on the high-rate deposition of CBD-Zn (O, S) buffer layer for Cu (In, Ga) Se2 thin-film solar cells
Ceramics International
2024/1/15
Seong Jun Kang
H-Index: 18
A facile solution processible self-rectifying and sub-1 V operating memristor via oxygen vacancy gradient within TiO2 single layer
Journal of Materials Chemistry C
2024
Solution processable visible-light and color-selective image sensor with a ZnO/QDs/ZrO2 sandwich structure
Current Applied Physics
2023/11/1
Seong Jun Kang
H-Index: 18
Boosting the Visible Light Optoelectronic Synaptic Characteristics of Solution-Processed IGZO Transistors via Vertically Diffused Cd Dopants
ACS Applied Electronic Materials
2023/10/26
Hanseok Jeong
H-Index: 10
Wonsik Kim
H-Index: 6
Soohyung Park
H-Index: 15
Woojin Jeon
H-Index: 1
Seong Jun Kang
H-Index: 18
Controllable Layer-By-Layer CdSe/ZnS Quantum-Dot Thin Films for Enhanced Performance of Light-Emitting Diodes and Photodetectors
ACS Applied Nano Materials
2023/7/19
Intrinsically stretchable three primary light-emitting films enabled by elastomer blend for polymer light-emitting diodes
Science advances
2023/6/21
Highly Efficient ITO-Free Quantum-Dot Light Emitting Diodes via Solution-Processed PEDOT: PSS Semitransparent Electrode
Materials
2023/5/29
Seong Jun Kang
H-Index: 18
Enhanced performance of flexible quantum dot light-emitting diodes using a low-temperature processed PTAA hole transport layer
Scientific Reports
2023/3/7
Enhancing the Performance of Quantum Dot Light-Emitting Diodes Using Solution-Processable Highly Conductive Spinel Structure CuCo2O4 Hole Injection Layer
ACS Applied Materials & Interfaces
2017/5/10
A chemically treated IGZO-based highly visible-blind UV phototransistor with suppression of the persistent photoconductivity effect
Journal of Materials Chemistry C
2023
Correction: Solution-processable Li-doped transition metal oxide hole-injection layer for highly efficient quantum-dot light-emitting diodes
Journal of Materials Chemistry C
2023
Jeong Won Kim
H-Index: 4
Seong Jun Kang
H-Index: 18
Improving the Performance of Solution−Processed Quantum Dot Light−Emitting Diodes via a HfOx Interfacial Layer
Materials
2022/12/15
Young Duck Kim
H-Index: 22
Seong Jun Kang
H-Index: 18
The origin of the enhanced photoresponsivity of the phototransistor with ZnO1-xSx single active layer
Applied Surface Science
2022/7/15
Seong Jun Kang
H-Index: 18
Highly enhanced visible light photodetection properties of a ZnO phototransistor via an additional solution processed thin Al 2 O 3 layer
Journal of Materials Chemistry C
2022
Seong Jun Kang
H-Index: 18
An Al-doped TiO 2 interfacial layer for effective hole injection characteristics of quantum-dot light-emitting diodes
Journal of Materials Chemistry C
2022
Woojin Jeon
H-Index: 1
Seong Jun Kang
H-Index: 18
Solution-processable Li-doped transition metal oxide hole-injection layer for highly efficient quantum-dot light-emitting diodes
Journal of Materials Chemistry C
2022
Jeong Won Kim
H-Index: 4
Seong Jun Kang
H-Index: 18
Dual-functional quantum-dots light emitting diodes based on solution processable vanadium oxide hole injection layer
Scientific Reports
2021/1/18