Roberto Rangel

Roberto Rangel

University of Toronto

H-index: 3

North America-Canada

About Roberto Rangel

Roberto Rangel, With an exceptional h-index of 3 and a recent h-index of 3 (since 2020), a distinguished researcher at University of Toronto, specializes in the field of Integrated Circuits.

His recent articles reflect a diverse array of research interests and contributions to the field:

39 000-Subexposures/s Dual-ADC CMOS Image Sensor With Dual-Tap Coded-Exposure Pixels for Single-Shot HDR and 3-D Computational Imaging

Dual-Port CMOS Image Sensor with Regression-Based HDR Flux-to-Digital Conversion and 80ns Rapid-Update Pixel-Wise Exposure Coding

A 39,000 Subexposures/s CMOS image sensor with dual-tap coded-exposure data-memory pixel for adaptive single-shot computational imaging

Design of operational transconductance amplifier with Gate-All-Around Nanosheet MOSFET using experimental data from room temperature to 200° C

Experimental silicon tunnel-FET device model applied to design a Gm-C filter

Readout Circuit Design Using Experimental Data of Line-TFET Devices

Roberto Rangel Information

University

Position

___

Citations(all)

31

Citations(since 2020)

31

Cited By

12

hIndex(all)

3

hIndex(since 2020)

3

i10Index(all)

1

i10Index(since 2020)

1

Email

University Profile Page

Google Scholar

Roberto Rangel Skills & Research Interests

Integrated Circuits

Top articles of Roberto Rangel

39 000-Subexposures/s Dual-ADC CMOS Image Sensor With Dual-Tap Coded-Exposure Pixels for Single-Shot HDR and 3-D Computational Imaging

IEEE Journal of Solid-State Circuits

2023/6/2

Dual-Port CMOS Image Sensor with Regression-Based HDR Flux-to-Digital Conversion and 80ns Rapid-Update Pixel-Wise Exposure Coding

2023/2/19

A 39,000 Subexposures/s CMOS image sensor with dual-tap coded-exposure data-memory pixel for adaptive single-shot computational imaging

2022/6/12

Design of operational transconductance amplifier with Gate-All-Around Nanosheet MOSFET using experimental data from room temperature to 200° C

Solid-State Electronics

2022/3/1

Roberto Rangel
Roberto Rangel

H-Index: 2

Experimental silicon tunnel-FET device model applied to design a Gm-C filter

Semiconductor Science and Technology

2020/8/10

Readout Circuit Design Using Experimental Data of Line-TFET Devices

ECS Transactions

2020/4/24

Roberto Rangel
Roberto Rangel

H-Index: 2

Paula Ghedini Der Agopian
Paula Ghedini Der Agopian

H-Index: 11

See List of Professors in Roberto Rangel University(University of Toronto)