Lin Bao
Peking University
H-index: 12
Asia-China
Top articles of Lin Bao
An isolated symmetrical 2T2R cell enabling high precision and high density for RRAM-based in-memory computing
Science China Information Sciences
2024/5
Investigation and mitigation of Mott neuronal oscillation fluctuation in spiking neural network
Science China Information Sciences
2024/2
A Logic-Process Compatible RRAM with 15.43 Mb/mm2 Density and 10years@150°C retention using STI-less Dynamic-Gate and Self-Passivation Sidewall
2023/12/9
Hybrid-Domain In-Memory Polynomial Acceleration based on 40nm RRAM Multi-Core Chip for Machine Vision Calibration
2023/12/9
Device-Architecture Co-optimization for RRAM-based In-memory Computing
2023/10/24
A High-Speed True Random Number Generator based on Unified Selector-RRAM
IEEE Electron Device Letters
2023/10/10
Temperature-Dependent Accuracy Analysis and Resistance Temperature Correction in RRAM-Based In-Memory Computing
IEEE Transactions on Electron Devices
2023/4/24
Experimental Demonstration of High-order In-memory Computing based on IGZO Charge Trapping RAM Array for Polynomial Regression Acceleration
2022/12/3
Multilayer Reservoir Computing Based on Ferroelectric α‐In2Se3 for Hierarchical Information Processing (Adv. Mater. 48/2022)
Advanced Materials
2022/12
An optoelectronic synapse based on α-In2Se3 with controllable temporal dynamics for multimode and multiscale reservoir computing
Nature Electronics
2022/11
Unified Insulator-Metal Transition and Resistive Switching Device for Memory, Computing and Sensing Applications
2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)
2022/10/25
Lin Bao
H-Index: 5
Ru Huang
H-Index: 1
A Novel Interface Trap 1T0C In-Ga-Zn Oxide DRAM Cell with Enhanced Data Retention
2022/10/25
In Materia Neuron Spiking Plasticity for Sequential Event Processing Based on Dual‐Mode Memristor
Advanced Intelligent Systems
2022/8
Implementation of neuronal intrinsic plasticity by oscillatory device in spiking neural network
IEEE Transactions on Electron Devices
2022/3/8
Investigation of Read Voltage Impact on Foundry BEOL RRAM for Core Integration
2022/3/6
Lin Bao
H-Index: 5
Ru Huang
H-Index: 1
Emulation of biphasic plasticity in retinal electrical synapses for light-adaptive pattern pre-processing
Nanoscale
2021
Emulation of Synaptic Scaling Based on MoS2 Neuristor for Self‐Adaptative Neuromorphic Computing
Advanced Electronic Materials
2021/4
Self-Selective Resistive Device with Hybrid Switching Mode for Passive Crossbar Memory Application
IEEE Electron Device Letters
2020/5/5
Homogeneous 3D Vertical Integration of Parylene‐C Based Organic Flexible Resistive Memory on Standard CMOS Platform
Advanced Electronic Materials
2020
Rotational Pattern Recognition by Spiking Correlated Neural Network Based on Dual‐Gated MoS2 Neuristor
Advanced Intelligent Systems
2020
Lin Bao
H-Index: 5
Ru Huang
H-Index: 1
Co-Authors
